MSK4304S [MSK]
10 AMP, 75 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE HYBRID; 10安， 75伏MOSFET智能电源3相电机驱动混合动力车
| 型号： | MSK4304S |
| 厂家： | 
M.S. KENNEDY CORPORATION |
| 描述： | 10 AMP, 75 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE HYBRID |
| 文件： | 总6页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISO-9001 CERTIFIED BY DSCC
10 AMP, 75 VOLT MOSFET
SMART POWER 3-PHASE
MOTOR DRIVE HYBRID
4303
(315) 701-6751
M.S.KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088
FEATURES:
MIL-PRF-38534 CERTIFIED
75V, 10 Amp Capability
Ultra Low Thermal Resistance - Junction to Case - 1.5°C/W (Each MOSFET)
Self-Contained, Smart Lowside/Highside Drive Circuitry
Bootstrap High-Side Supplies
Under-Voltage Lockout
Capable of Switching Frequencies to 25KHz
Isolated Case Allows Direct Heat Sinking
Bolt-down Design Allows Superior Heat Dissipation
DESCRIPTION:
The MSK 4303 is a 10 Amp, 3 Phase Bridge Smart Power Motor Drive Hybrid with a 75 volt rating on the output
switches. The output switches are MOSFETs. This new smart power motor drive hybrid is 5.0 volt input logic
compatible. Under-voltage lockout shuts down the bridge when the supply voltage gets to a point of incomplete
turn-on of the output switches. The internal high-side bootstrap power supply derived from the +VB supply
completely eliminates the need for 3 floating independent power supplies.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
PIN-OUT INFORMATION
1
2
3
4
5
6
7
8
9
10
V+
N/C
AV-
AØ
N/C
BV-
BØ
N/C
CV-
CØ
H INA
L INA
+VCC
H INB
L INB
COM
COM
+VB
H INC
L INC
20
19
18
17
16
15
14
13
12
11
TYPICAL APPLICATIONSPIN-OUT INFORMATION
3 PHASE SIX STEP DC BRUSHLESS MOTOR DRIVE
OR 3 PHASE SINUSOIDAL INDUCTION MOTOR DRIVE
1
Rev. B 11/05
6
ABSOLUTE MAXIMUM RATINGS
Storage Temperature Range
Lead Temperature Range
(10 Seconds)
Case Operating Temperature
MSK 4303
MSK 4303H/E
-65° to +150°C
300°C
V+ High Voltage Supply
VCC Logic Supply
IOUT Continuous Output Current
IPK Peak Output Current
θJC Thermal Resistance @ 125°C
TsT
TLD
TC
75V
18V
10A
14A
-40°C to +85°C
-55°C to +125°C
+150°C
(Output Switches)(Junction to Case)
1.5°C/W
Junction Temperature
TJ
ELECTRICAL SPECIFICATIONS
GROUP A
SUBGROUP
3
MSK 4303H/E
MSK 4303 2
UNITS
Min. Typ. Max.
Parameters
Test Conditions
Min. Typ. Max.
5
OUTPUT CHARACTERISTICS
-
-
-
-
-
-
-
-
-
-
0.013
1
2
3
1
2
3
1
2
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.013
0.026
0.013
-
Ω
Ω
Ω
volts
volts
volts
µA
Drain-Source ON Resistance 1
Ic=10A
Ic=10A
-
-
(each MOSFET) (for thermal calculations only)
-
-
1.4
0.56 1.2
0.78 1.5
0.42 1.0
0.56
Drain-Source Voltage (VDS(on))
(each MOSFET)
-
-
-
-
V+ = 75V
V+ = 75V
25
-
1
10
1
25
250
25
-
1
Leakage Current (Each MOSFET)
-
-
mA
mA
nS
V+ = 75V
-
Reverse Recovery Time
1
ID=10A, di/dt=100A/µS
120
120
-
BIAS SUPPLY CHARACTERISTICS
+Vcc Bias Current
-
-
+Vcc=15V
+VB=15V
-
-
12
6
20
9
12
6
20
9
1,2,3
1,2,3
mA
mA
+VB Bias Current
INPUT SIGNAL CHARACTERISTICS
1
Positive Trigger Threshold Voltage
Negative Trigger Threshold Voltage
2.7
-
+Vcc=15V
+Vcc=15V
2.7
-
-
-
-
-
-
-
-
volts
volts
volts
volts
nSEC
µSEC
1
0.8
9.8
9.0
0.8
-
8.0
7.4
280
4
+Vcc Positive Going Threshold
+Vcc Negative Going Threshold
Low Side Turn-off to High Side Turn-On
High Side Turn-off to Low Side Turn-On
8.0 8.9
7.4 8.2
8.9 9.8
8.2 9.0
400 520
1,2,3
Under-voltage Lockout
1,2,3
280 400 520
-
-
1
Dead Time
4
5
6
5
6
NOTES:
Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
Industrial grade and "E" suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.
Military grade devices ("H" suffix) shall be 100% tested to subgroups 1, 2 and 3.
Subgroups 5 and 6 testing available upon request.
1
2
3
4
5
Subgroup 1, 4 TA=TC=+25°C
2, 5 TA=TC=+125°C
3, 6 TA=TC=-55°C
Continuous operation at or above absolute maximum ratings may adversely effect the device performance and/or life cycle.
6
2
Rev. B 11/05
TYPICAL PERFORMANCE CURVES
3
Rev. B 11/05
APPLICATION NOTES
MSK 4303 PIN DESCRIPTIONS
+VCC - Is the low voltage supply for all the internal
logic and drivers. A 0.1 µF ceramic capacitor in paral-
lel with a 10µF tantalum capacitor is the recommended
bypassing from the +VCC pin to the COM pin.
H INA, H INB, H INC - Are high active logic inputs for
signalling the corresponding phase high-side switch to
turn on. The logic inputs are compatible with standard
CMOS or LSTTL outputs. These logic inputs are inter-
nally zener clamped at 5.2 volts.
L INA, L INB, L INC - Are low active logic inputs for
signalling the corresponding phase low-side switch to
turn on. The logic inputs are compatible with standard
CMOS or LSTTL outputs. These logic inputs are inter-
nally zener clamped at 5.2 volts.
AØ, BØ, CØ - Are the pins connecting the 3 phase
bridge switch outputs.
AV-, BV-, CV- - Are the connections from the bottoms
of the three half bridges. These pins get connected to
the COM pin. If current sensing is desired they may be
connected to the COM pin through a low value sense
resistor.
+VB - Is the connection used to provide power to the
floating high-side bootstrap supplies in the gate drive
circuitry.
V+ - Is the high voltage positive rail connection to the
tops of the three half bridges. Proper power supply
bypassing must be connected from this pin to the COM
pin for good filtering. This bypassing must be done as
close to the hybrid as possible.
COM - Is the connection that all hybrid power supply
connections are returned to and bypassed to.
4
Rev. B 11/05
TYPICAL SYSTEM OPERATION
The MSK 4303 is designed to be used with a +28 volt high voltage bus, +15 volt low power bus and +5 volt logic
signals. Proper derating should be applied when designing the MSK 4303 into a system. High frequency layout
techniques with ground planes on a printed circuit board is the only method that should be used for circuit construc-
tion. This will prevent pulse jitter caused by excessive noise pickup on the current sense signal or the error amp
signal.
Ground planes for the lower power circuitry and the high power circuitry should be kept separate. The connection
between the bottom of the current sense resistor, COM pin and the high power ground, AV-, BV- and CV- pins are
connected at this point. This is a critical path and high currents should not be flowing between the current sense and
COM. Inductance in this path should be kept to a minimum. An RC filter (shown in 2 places) will filter out the current
spikes and keep the detected noise for those circuits down to a minimum.
In the system shown a PWM pulse by pulse current limit scheme controlled by the motor controller is implemented.
When controlling the motor speed by the PWM method, it is required that the low side switches be PWM pulsed due
to the bootstrap supplies used to power the high side switch drives. The higher the PWM speed the higher the current
load on the drive supply. PWM of the low side will prevent sagging of the high side supplies. A separate pin (+VB)
is provided for connecting an external floating power supply to power the bootstrap supplies.
5
Rev. B 11/05
MECHANICAL SPECIFICATIONS
ESD Triangle Indicates Pin ꢀ
Weight=42 Grams Typical
Contains Internal BeO (Beryllium Oxide)
All dimensions are ± ±0±ꢀ inches unless otherwise specified0
ORDERING INFORMATION
MSK4303 H U
LEAD CONFIGURATIONS
S=STRAIGHT; U=BENT UP; D=BENT DOWN
SCREENING
BLANK=INDUSTRIAL; H=MIL-PRF-38534 CLASS H;
E=EXTENDED RELIABILITY
GENERAL PART NUMBER
M.S. Kennedy Corp.
47±7 Dey Road, Liverpool, New York ꢀ3±88
Phone (3ꢀ5) 7±ꢀ-675ꢀ
FAX (3ꢀ5) 7±ꢀ-6752
www0mskennedy0com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however and assumes no liability for the use of its products.
Please visit our website for the most recent version of this datasheet.
Rev. B 11/05
6
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