TIP41B [MOTOROLA]
POWER TRANSISTORS COMPLEMENTARY SILICON; 功率晶体管互补硅
| 型号： | TIP41B |
| 厂家： | 
MOTOROLA |
| 描述： | POWER TRANSISTORS COMPLEMENTARY SILICON |
| 文件： | 总6页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by TIP41A/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general purpose amplifier and switching applications.
•
Collector–Emitter Saturation Voltage —
= 1.5 Vdc (Max) @ I = 6.0 Adc
Collector–Emitter Sustaining Voltage —
V
CE(sat)
C
•
V
V
V
= 60 Vdc (Min) — TIP41A, TIP42A
= 80 Vdc (Min) — TIP41B, TIP42B
= 100 Vdc (Min) — TIP41C, TIP42C
CEO(sus)
CEO(sus)
CEO(sus)
•
•
High Current Gain — Bandwidth Product
= 3.0 MHz (Min) @ I = 500 mAdc
Compact TO–220 AB Package
f
T
C
*Motorola Preferred Device
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
*MAXIMUM RATINGS
TIP41A TIP41B TIP41C
TIP42A TIP42B TIP42C
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
60–80–100 VOLTS
65 WATTS
V
CEO
60
60
80
80
100
100
V
CB
V
EB
5.0
Collector Current — Continuous
Peak
I
C
6
10
Base Current
I
B
2.0
Adc
Total Power Dissipation
P
D
@ T = 25 C
65
0.52
Watts
W/ C
C
Derate above 25 C
Total Power Dissipation
P
D
@ T = 25 C
2.0
0.016
Watts
W/ C
A
Derate above 25 C
CASE 221A–06
TO–220AB
Unclamped Inductive Load Energy (1)
E
62.5
mJ
C
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
C/W
C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
62.5
1.92
θJA
θJC
(1) I = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V
= 10 V, R = 100 Ω.
BE
C
CC
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I = 30 mAdc, I = 0)
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
V
60
80
100
—
—
—
Vdc
CEO(sus)
C
B
Collector Cutoff Current
TIP41A, TIP42A
TIP41B, TIP41C
TIP42B, TIP42C
I
—
—
—
0.7
0.7
0.7
mAdc
CEO
(V
CE
(V
CE
= 30 Vdc, I = 0)
B
= 60 Vdc, I = 0)
B
Collector Cutoff Current
I
µAdc
CES
(V
CE
(V
CE
(V
CE
= 60 Vdc, V
= 80 Vdc, V
= 100 Vdc, V
= 0)
= 0)
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
—
—
—
400
400
400
EB
EB
= 0)
EB
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I = 0)
I
—
1.0
mAdc
—
C
EBO
ON CHARACTERISTICS (1)
DC Current Gain (I = 0.3 Adc, V
= 4.0 Vdc)
= 4.0 Vdc)
h
FE
30
15
—
75
C
CE
CE
DC Current Gain (I = 3.0 Adc, V
C
Collector–Emitter Saturation Voltage (I = 6.0 Adc, I = 600 mAdc)
V
CE(sat)
—
—
1.5
2.0
Vdc
Vdc
C
B
Base–Emitter On Voltage (I = 6.0 Adc, V
C
= 4.0 Vdc)
V
BE(on)
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (I = 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
f
3.0
20
—
—
MHz
—
C
T
Small–Signal Current Gain (I = 0.5 Adc, V
= 10 Vdc, f = 1.0 kHz)
300 µs, Duty Cycle 2.0%.
h
fe
C
CE
(1) Pulse Test: Pulse Width
T
T
C
A
4.0
3.0
2.0
80
60
40
T
C
T
A
1.0
0
20
0
0
20
40
60
100
C)
120
140
160
80
T, TEMPERATURE (
°
Figure 1. Power Derating
V
CC
2.0
+30 V
T
J
= 25
= 30 V
°C
1.0
R
25
µs
V
C
CC
/I = 10
0.7
0.5
I
SCOPE
+11 V
0
C B
R
B
0.3
0.2
t
r
–9.0 V
D
1
t , t
≤
10 ns
0.1
0.07
0.05
r
f
DUTY CYCLE = 1.0%
t
@ V ≈ 5.0 V
BE(off)
–4 V
d
R
D
and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
0.03
0.02
0.06
MUST BE FAST RECOVERY TYPE, e.g.:
1
1N5825 USED ABOVE I
MSD6100 USED BELOW I
≈
100 mA
100 mA
0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
B
≈
B
I
, COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Time Test Circuit
Figure 3. Turn–On Time
2
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
0.1
0.07
0.05
(pk)
Z
R
= r(t) R
θ
θ
θ
JC(t)
JC
JC
°C/W MAX
0.05
= 1.92
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
t
1
0.03
0.02
t
1
2
T
– T = P
Z
J(pk)
C
(pk) θJC(t)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.05 1.0
0.01
0.01
0.02
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
t, TIME (ms)
Figure 4. Thermal Response
10
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
0.5 ms
5.0
down. Safe operating area curves indicate I – V
limits of
1.0 ms
C
CE
3.0
2.0
T
= 150°C
J
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
5.0 ms
1.0
0.5
The data of Figure 5 is based on T
= 150 C; T is
C
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
THERMAL LIMITATION @ T = 25°C
C
(SINGLE PULSE)
J(pk)
may be calculated from the data in
CURVES APPLY BELOW RATED V
CEO
0.3
0.2
150 C.
T
J(pk)
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1
5.0
10
20
40
60
80 100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Active–Region Safe Operating Area
5.0
300
T
J
= 25°C
3.0
2.0
T
V
= 25
°
C
J
200
= 30 V
CC
/I = 10
I
I
C B
= I
t
s
1.0
B1 B2
C
C
ib
0.7
0.5
100
70
0.3
0.2
t
ob
f
50
0.1
0.07
0.05
30
0.5
0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0 6.0
1.0
2.0 3.0
V , REVERSE VOLTAGE (VOLTS)
R
5.0
10
20
30
50
I
, COLLECTOR CURRENT (AMP)
C
Figure 6. Turn–Off Time
Figure 7. Capacitance
3
Motorola Bipolar Power Transistor Device Data
500
2.0
1.6
1.2
T
= 25°C
300
200
J
V
= 2.0 V
CE
T
= 150°C
J
100
70
25°C
I
= 1.0 A
2.5 A
5.0 A
C
50
0.8
0.4
0
30
20
–55°C
10
7.0
5.0
0.06
0.1
0.2
0.3 0.4 0.6
1.0
2.0
4.0 6.0
10
20 30
50
I , BASE CURRENT (mA)
B
100
200 300
500
1000
I
, COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
1.6
1.2
0.8
+2.5
+2.0
+1.5
T
= 25°C
J
*APPLIES FOR I /I
≤
h
/4
C B
FE
+1.0
+0.5
0
+25
°
C to +150
°
C
*
θ
FOR V
VC CE(sat)
–55
°
C to +25
°
C
V
V
@ I /I = 10
C B
BE(sat)
–0.5
+25°
C to +150°
C
–1.0
–1.5
–2.0
–2.5
V
@ V = 4.0 V
CE
BE
0.4
0
θ
FOR V
BE
VB
0.1
–55
°
C to +25°C
@ I /I = 10
C B
CE(sat)
0.06 0.1
0.2 0.3 0.4
0.6
1.0
2.0 3.0 4.0
6.0
0.06
0.2 0.3
0.5
1.0
2.0 3.0 4.0 6.0
I
, COLLECTOR CURRENT (AMP)
I , COLLECTOR CURRENT (AMP)
C
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
3
10
10 M
V
= 30 V
CE
V
= 30 V
CE
2
1
0
10
1.0 M
100 k
10 k
I
= 10 x I
CES
C
T
= 150°C
J
10
10
100°C
I
≈ I
CES
C
25°C
I
= I
CES
–1
–2
C
I
= 2 x I
10
C CES
1.0 k
0.1 k
REVERSE
FORWARD
(TYPICAL I
VALUES
OBTAINED FROM FIGURE 12)
10
CES
–3
10
–0.3 –0.2 –0.1
0
+0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7
20
40
60
80
100
120
C)
140
160
V
, BASE–EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
BE
J
Figure 12. Collector Cut–Off Region
Figure 13. Effects of Base–Emitter Resistance
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
5
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
TIP41A/D
◊
相关型号：
TIP41B-6226
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP41B-6263
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP41B-6264
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP41B-DR6280
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP41B16
Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
©2020 ICPDF网 联系我们和版权申明