MUN5233DW1T1 [MOTOROLA]
Dual Bias Resistor Trasnsistors; 双偏置电阻Trasnsistors
| 型号： | MUN5233DW1T1 |
| 厂家： | 
MOTOROLA |
| 描述： | Dual Bias Resistor Trasnsistors |
| 文件： | 总10页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MUN5211DW1T1/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon Surface Mount Transistors with
Monolithic Bias Resistor Network
Motorola Preferred Devices
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. In the
MUN5211DW1T1 series, two BRT devices are housed in the SOT–363
package which is ideal for low power surface mount applications where board
space is at a premium.
6
5
4
1
2
3
CASE 419B–01, STYLE 1
SOT–363
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
(3)
(2)
R
(1)
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
1
R
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
V
50
50
Vdc
Vdc
CBO
CEO
I
C
100
mAdc
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
R
833
°C/W
°C
θJA
T , T
–65 to +150
*150
J
stg
(1)
Total Package Dissipation @ T = 25°C
P
mW
A
D
DEVICE MARKING AND RESISTOR VALUES: MUN5211DW1T1 SERIES
Device
Marking
R1 (K)
R2 (K)
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
7A
7B
7C
7D
7E
7F
7G
7H
7J
10
22
47
10
10
10
22
47
47
∞
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
4.7
1.0
2.2
4.7
4.7
22
∞
1.0
2.2
4.7
47
47
47
7K
7L
7M
2.2
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
= 50 V, I = 0)
I
I
—
—
—
—
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V
= 50 V, I = 0)
B
CE
CEO
Emitter-Base Cutoff Current
MUN5211DW1T1
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
EBO
(V
EB
= 6.0 V, I = 0)
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
C
Collector-Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
—
—
—
—
Vdc
Vdc
C
E
(BR)CBO
(3)
Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0)
C
B
(BR)CEO
(3)
ON CHARACTERISTICS
DC Current Gain
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
h
FE
35
60
80
60
—
—
—
—
—
—
—
—
—
—
—
—
(V
CE
= 10 V, I = 5.0 mA)
100
140
140
350
350
5.0
15
C
80
160
160
3.0
8.0
15
80
80
80
30
200
150
140
Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
—
—
0.25
Vdc
Vdc
C
B
(I = 10 mA, I = 5 mA) MUN5230DW1T1/MUN5231DW1T1
C
B
(I = 10 mA, I = 1 mA) MUN5215DW1T1/MUN5216DW1T1
C
B
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kΩ)
V
OL
MUN5211lDW1T1
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5213DW1T1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V
CC
= 5.0 V, V = 3.5 V, R = 1.0 kΩ)
B L
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q ) (Continued)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (V
= 5.0 V, V = 0.5 V, R = 1.0 kΩ)
V
OH
4.9
—
—
Vdc
CC
B
L
(V
CC
(V
CC
= 5.0 V, V = 0.050 V, R = 1.0 kΩ)
MUN5230DW1T1
B
L
= 5.0 V, V = 0.25 V, R = 1.0 kΩ)
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1
B
L
Input Resistor
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k Ω
15.4
1.54
28.6
2.86
2.2
Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/MUN5213DW1T1
MUN5214DW1T1
R1/R2
0.8
0.17
—
1.0
0.21
—
1.0
0.1
1.2
0.25
—
MUN5215DW1T1/MUN5216DW1T1
MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
0.8
1.2
0.055
0.38
0.038
0.185
0.56
0.056
0.47
0.047
250
200
150
100
R
= 833°C/W
θ
JA
50
0
–50
0
50
100
C)
150
T , AMBIENT TEMPERATURE (
°
A
Figure 1. Derating Curve
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1
1
1000
I
/I = 10
V
= 10 V
C B
T
= –25°C
CE
A
25°C
T
= 75
°C
°C
A
25
0.1
–25°C
75°C
100
0.01
0.001
10
0
20
40
, COLLECTOR CURRENT (mA)
50
1
10
100
I
I
, COLLECTOR CURRENT (mA)
C
C
Figure 2. V
versus I
Figure 3. DC Current Gain
CE(sat)
C
4
3
100
10
25°C
75°C
f = 1 MHz
= 0 V
I
E
T
= –25°C
A
T
= 25
°
C
A
1
0.1
2
1
0
0.01
0.001
V
= 5 V
9
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
V
, INPUT VOLTAGE (VOLTS)
R
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
= 0.2 V
T
= –25°C
O
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1
1000
1
V
= 10 V
CE
I
/I = 10
C B
T
= 75°C
A
25°C
25°C
T
= –25°C
A
0.1
–25°C
75°C
100
0.01
10
0.001
1
10
100
0
20
, COLLECTOR CURRENT (mA)
40
50
I
I
, COLLECTOR CURRENT (mA)
C
C
Figure 7. V
versus I
Figure 8. DC Current Gain
CE(sat)
C
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
= 0 V
T
= –25°C
A
I
E
T
= 25°C
A
0.1
0.01
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
V
, INPUT VOLTAGE (VOLTS)
R
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
= 0.2 V
O
T
= –25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1
10
1
1000
V
= 10 V
I
/I = 10
CE
C B
T
= 75°C
A
25°C
–25°C
25°C
100
T
= –25°C
A
75°C
0.1
0.01
10
0
20
, COLLECTOR CURRENT (mA)
40
50
1
10
100
I
I
, COLLECTOR CURRENT (mA)
C
C
Figure 12. V
versus I
Figure 13. DC Current Gain
CE(sat)
C
1
100
10
1
25°C
f = 1 MHz
= 0 V
75°C
I
E
T = –25
°C
0.8
T
= 25
°
C
A
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
V , INPUT VOLTAGE (VOLTS)
in
6
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
= 0.2 V
O
T
= –25°C
A
25°C
10
1
75°C
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214DW1T1
1
0.1
300
T
= 75°C
A
V
= 10
I
/I = 10
CE
C B
T
= –25°C
250
200
150
A
25°C
25°C
–25°C
75°C
0.01
100
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I
, COLLECTOR CURRENT (mA)
C
Figure 17. V
versus I
Figure 18. DC Current Gain
CE(sat)
C
4
3.5
3
100
10
1
f = 1 MHz
= 0 V
T
A
= 75°C
25°C
l
E
T
= 25°C
A
–25°C
2.5
2
1.5
1
0.5
0
V
= 5 V
O
0
2
4
6
8
10 15 20
25 30
35 40 45 50
0
2
4
6
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
V
, INPUT VOLTAGE (VOLTS)
R
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V
= 0.2 V
O
T
= –25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–363
0.5 mm (min)
1.9 mm
SOT–363 POWER DISSIPATION
The power dissipation of the SOT–363 is a function of the
SOLDERING PRECAUTIONS
pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
determinedby T
ture of the die, R
, themaximumratedjunctiontempera-
, the thermal resistance from the device
J(max)
θJA
junction to ambient; and the operating temperature, T .
A
Using the values provided on the data sheet, P can be
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
calculated as follows:
T
– T
A
J(max)
P
=
D
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
The soldering temperature and time should not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
•
•
•
calculate the power dissipation of the device which in this
case is 150 milliwatts.
150°C – 25°C
P
=
= 150 milliwatts
D
833°C/W
The 833°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 150 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–363 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
8
Motorola Small–Signal Transistors, FETs and Diodes Device Data
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a
figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 25 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems but it is a good
starting point. Factors that can affect the profile include the
type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177–189°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6 STEP 7
VENT COOLING
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK” ZONES 2 & 5
“RAMP”
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
205
PEAK AT
SOLDER JOINT
° TO 219°C
200
°
C
C
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
150°C
150°
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
140°C
100°C
MASS OF ASSEMBLY)
100
°
C
C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 22. Typical Solder Heating Profile
Motorola Small–Signal Transistors, FETs and Diodes Device Data
9
PACKAGE DIMENSIONS
A
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
V
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
A
B
C
D
MIN
MAX
0.087
0.053
0.043
0.012
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
6
1
5
4
3
0.071
0.045
0.031
0.004
S
–B–
2
G
H
J
0.026 BSC
0.65 BSC
–––
0.004
0.004
0.004
0.010
0.012
–––
0.10
0.10
0.10
0.25
0.30
K
M
M
N
S
V
0.008 REF
0.20 REF
0.2 (0.008)
B
D6 PL
0.079
0.012
0.087
0.016
2.00
0.30
2.20
0.40
N
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
J
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
C
6. COLLECTOR 2
K
H
CASE 419B–01
ISSUE C
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MUN5211DW1T1/D
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相关型号：
MUN5233DW1T3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, CASE 419B-01, 6 PIN
MOTOROLA
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