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MTD6N10 [MOTOROLA]

POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT; 功率场效应晶体管，N沟道增强型硅栅， DPAK用于表面安装或插入MOUNT
MTD6N10
元器件型号： MTD6N10
生产厂家： MOTOROLA, INC    MOTOROLA, INC
描述和应用：

POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT
功率场效应晶体管，N沟道增强型硅栅， DPAK用于表面安装或插入MOUNT

晶体 晶体管 功率场效应晶体管 开关 脉冲 栅
PDF文件： 总5页 (文件大小：171K)
下载文档：  下载PDF数据表文档文件
型号参数：MTD6N10参数
 查看货源

MTD6N10-1

 Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

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0 MOTOROLA

MTD6N10E

 TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

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49 MOTOROLA

MTD6N10E

 6A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET

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0 MOTOROLA

MTD6N10E

 TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,6A I(D),TO-252AA

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0 ONSEMI

MTD6N10ET4

 6A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET

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0 MOTOROLA

MTD6N10ET4

 6A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET

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0 ONSEMI

MTD6N10T4

 Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

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0 MOTOROLA

MTD6N15

 TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

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76 MOTOROLA

MTD6N15

 Power Field Effect Transistor DPAK for Surface Mount

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71 ONSEMI

MTD6N15-1

 Power Field Effect Transistor DPAK for Surface Mount

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53 ONSEMI

MTD6N15-1

 6A, 150V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

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1 MOTOROLA

MTD6N15T4

 Power Field Effect Transistor DPAK for Surface Mount

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67 ONSEMI

MTD6N15T4G

 N−Channel Enhancement−Mode Silicon Gate

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70 ONSEMI

MTD6N20E

 Power MOSFET 6 Amps, 200 Volts N−Channel DPAK

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120 ONSEMI

MTD6N20E

 TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM

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80 MOTOROLA
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