MMUN2233LT1 [MOTOROLA]

NPN SILICON BIAS RESISTOR TRANSISTOR; NPN硅偏置电阻晶体管


型号：	MMUN2233LT1
厂家：	MOTOROLA
描述：	NPN SILICON BIAS RESISTOR TRANSISTOR NPN硅偏置电阻晶体管晶体小信号双极晶体管
文件：	总12页 (文件大小：178K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Order this document

by MMUN2211LT1/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon Surface Mount Transistor with

Monolithic Bias Resistor Network

Motorola Preferred Devices

This new series of digital transistors is designed to replace a single device and its

external resistor bias network. The BRT (Bias Resistor Transistor) contains a single

transistor with a monolithic bias network consisting of two resistors; a series base

resistor and a base-emitter resistor. The BRT eliminates these individual components

by integrating them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SOT-23 package which is

designed for low power surface mount applications.

NPN SILICON

BIAS RESISTOR

TRANSISTOR

•

Simplifies Circuit Design

Reduces Board Space

PIN 3

COLLECTOR

(OUTPUT)

Reduces Component Count

The SOT-23 package can be soldered using wave or

reflow. The modified gull-winged leads absorb thermal

stress during soldering eliminating the possibility of

damage to the die.

PIN 1

BASE

(INPUT)

•

Available in 8 mm embossed tape and reel. Use the

Device Number to order the 7 inch/3000 unit reel.

Replace “T1” with “T3” in the Device Number to order

the13 inch/10,000 unit reel.

PIN 2

EMITTER

(GROUND)

CASE 318-08, STYLE 6

SOT-23 (TO-236AB)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Symbol

Value

Unit

Vdc

CBO

CEO

Collector-Emitter Voltage

Collector Current

Vdc

100

mAdc

(1)

Total Power Dissipation @ T = 25°C

Derate above 25°C

*200

1.6

mW/°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction-to-Ambient (surface mounted)

Operating and Storage Temperature Range

625

°C/W

°C

θJA

T , T

–65 to +150

stg

Maximum Temperature for Soldering Purposes,

Time in Solder Bath

260

°C

Sec

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

MMUN2211LT1

MMUN2212LT1

MMUN2213LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

A8A

A8B

A8C

A8D

A8E

A8F

A8G

A8H

A8J

A8K

A8L

4.7

2.2

4.7

∞

2.2

4.7

(2)

1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2. New devices. Updated curves to follow in subsequent data sheets.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces MMUN2211T1/D)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (V

= 50 V, I = 0)

—

100

500

nAdc

mAdc

CBO

Collector-Emitter Cutoff Current (V

= 50 V, I = 0)

CEO

Emitter-Base Cutoff Current

MMUN2211LT1

MMUN2212LT1

MMUN2213LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

—

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

EBO

= 6.0 V, I = 0)

Collector-Base Breakdown Voltage (I = 10 µA, I = 0)

—

Vdc

(BR)CBO

(3)

Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0)

(BR)CEO

(3)

ON CHARACTERISTICS

DC Current Gain

MMUN2211LT1

MMUN2212LT1

MMUN2213LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

100

140

350

5.0

—

= 10 V, I = 5.0 mA)

160

3.0

8.0

200

150

Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)

CE(sat)

—

0.25

Vdc

(I = 10 mA, I = 5 mA) MMUN2230LT1/MMUN2231LT1

(I = 10 mA, I = 1 mA) MMUN2215LT1/MMUN2216LT1

MMUN2232LT1/MMUN2233LT1/MMUN2234LT1

Output Voltage (on)

(V = 5.0 V, V = 2.5 V, R = 1.0 k Ω)

MMUN2211LT1

MMUN2212LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

MMUN2213LT1

—

0.2

= 5.0 V, V = 3.5 V, R = 1.0 k Ω)

B L

Output Voltage (off) (V

= 5.0 V, V = 0.5 V, R = 1.0 k Ω)

4.9

—

Vdc

= 5.0 V, V = 0.050 V, R = 1.0 k Ω)

MMUN2230LT1

MMUN2215LT1

MMUN2216LT1

MMUN2233LT1

= 5.0 V, V = 0.25 V, R = 1.0 k Ω)

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

Characteristic

(3)

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Input Resistor

MMUN2211LT1

MMUN2212LT1

MMUN2213LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

7.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

4.7

1.0

2.2

4.7

28.6

61.1

k Ω

6.1

1.3

2.9

6.1

28.6

15.4

Resistor Ratio

MMUN2211LT1/MMUN2212LT1/MMUN2213LT1

MMUN2214LT1

MMUN2215LT1/MMUN2216LT1

MMUN2230LT1/MMUN2231LT1/MMUN2232LT1

MMUN2233LT1

R1/R2

0.8

0.17

—

0.8

0.055

0.38

1.0

0.21

—

1.0

0.1

1.2

0.25

—

1.2

0.185

0.56

MMUN2234LT1

0.47

3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2211LT1

250

200

I /I = 10

C B

T = –25°C

25°C

75°C

0.1

150

100

0.01

θJA

= 625°C/W

0.001

–50

100

150

T , AMBIENT TEMPERATURE (°C)

I , COLLECTOR CURRENT (mA)

Figure 1. Derating Curve

Figure 2. V

versus I

CE(sat)

1000

100

= 10 V

f = 1 MHz

l = 0 V

T =75°C

T = 25°C

25°C

–25°C

100

V , REVERSE BIAS VOLTAGE (VOLTS)

I , COLLECTOR CURRENT (mA)

Figure 4. Output Capacitance

Figure 3. DC Current Gain

100

25°C

T = –25°C

V = 0.2 V

75°C

T = –25°C

25°C

75°C

0.1

0.01

0.001

V = 5 V

0.1

V , INPUT VOLTAGE (VOLTS)

I , COLLECTOR CURRENT (mA)

Figure 5. V

versus I

CE(sat)

Figure 6. V

CE(sat)

versus I

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2212LT1

1000

= 10 V

I /I = 10

C B

T = –25°C

T =75°C

25°C

75°C

25°C

0.1

–25°C

100

0.01

–

0.001

100

I , COLLECTOR CURRENT (mA)

Figure 7. V

CE(sat)

versus I

Figure 8. DC Current Gain

100

75°C

25°C

f = 1 MHz

T = –25°C

l = 0 V

T = 25°C

0.1

0.01

V = 5 V

0.001

V , REVERSE BIAS VOLTAGE (VOLTS)

V , INPUT VOLTAGE (VOLTS)

Figure 9. Output Capacitance

Figure 10. Output Current versus Input Voltage

100

V = 0.2 V

T = –25°C

25°C

75°C

0.1

I , COLLECTOR CURRENT (mA)

Figure 11. Input Voltage versus Output Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2213LT1

1000

I /I = 10

C B

T = –25°C

= 10 V

T =75°C

25°C

75°C

25°C

–25°C

100

0.1

0.01

100

I , COLLECTOR CURRENT (mA)

Figure 12. V

versus I

Figure 13. DC Current Gain

CE(sat)

100

25°C

75°C

f = 1 MHz

l = 0 V

0.8

T = –25°C

T = 25°C

0.6

0.4

0.1

0.01

0.2

V = 5 V

0.001

V , REVERSE BIAS VOLTAGE (VOLTS)

V , INPUT VOLTAGE (VOLTS)

Figure 14. Output Capacitance

Figure 15. Output Current versus Input Voltage

100

V = 0.2 V

T = –25°C

25°C

75°C

0.1

I , COLLECTOR CURRENT (mA)

Figure 16. Input Voltage versus Output Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

MMUN2214LT1

0.1

300

T = –25°C

I /I = 10

C B

T =75°C

= 10

250

200

150

100

25°C

75°C

25°C

–25°C

0.01

0.001

10 15 20 40 50 60 70 80 90 100

I , COLLECTOR CURRENT (mA)

Figure 17. V

versus I

Figure 18. DC Current Gain

CE(sat)

3.5

100

75°C

25°C

f = 1 MHz

l = 0 V

T = 25°C

2.5

T = –25°C

1.5

0.5

V = 5 V

10 15 20 25 30 35 40 45 50

V , REVERSE BIAS VOLTAGE (VOLTS)

V , INPUT VOLTAGE (VOLTS)

Figure 19. Output Capacitance

Figure 20. Output Current versus Input Voltage

T = –25°C

V = 0.2 V

25°C

75°C

0.1

I , COLLECTOR CURRENT (mA)

Figure 21. Input Voltage versus Output Current

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL APPLICATIONS FOR NPN BRTs

+12 V

ISOLATED

LOAD

FROM µP OR

OTHER LOGIC

Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

+12 V

OUT

LOAD

Figure 23. Open Collector Inverter: Inverts

the Input Signal

Figure 24. Inexpensive, Unregulated Current Source

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

SOT–23

SOT-23 POWER DISSIPATION

The power dissipation of the SOT-23 is a function of the

SOLDERING PRECAUTIONS

pad size. This can vary from the minimum pad size for

soldering to the pad size given for maximum power dissipation.

Power dissipation for a surface mount device is determined

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

by T

, the maximum rated junction temperature of the

, the thermal resistance from the device junction to

J(max)

die, R

θJA

ambient; and the operating temperature, T . Using the

values provided on the data sheet, P can be calculated as

follows.

•

Always preheat the device.

The delta temperature between the preheat and

soldering should be 100°C or less.*

– T

J(max)

θJA

•

When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference should be a maximum of 10°C.

The soldering temperature and time should not exceed

260°C for more than 10 seconds.

When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature T of 25°C, one can

calculate the power dissipation of the device which in this

case is 200 milliwatts.

•

150°C – 25°C

625°C/W

= 200 milliwatts

The 625°C/W assumes the use of the recommended

footprint on a glass epoxy printed circuit board to achieve a

power dissipation of 200 milliwatts. Another alternative would

be to use a ceramic substrate or an aluminum core board

such as Thermal Clad . Using a board material such as

Thermal Clad, a power dissipation of 400 milliwatts can be

achieved using the same footprint.

•

Mechanical stress or shock should not be applied during

cooling

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

or stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the surface mounted package

should be the same as the pad size on the printed circuit

board, i.e., a 1:1 registration.

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control

settings that will give the desired heat pattern. The operator

must set temperatures for several heating zones, and a

figure for belt speed. Taken together, these control settings

make up a heating “profile” for that particular circuit board.

On machines controlled by a computer, the computer

remembers these profiles from one operating session to the

next. Figure 25 shows a typical heating profile for use when

soldering a surface mount device to a printed circuit board.

This profile will vary among soldering systems but it is a good

starting point. Factors that can affect the profile include the

type of soldering system in use, density and types of

components on the board, type of solder used, and the type

of board or substrate material being used. This profile shows

temperature versus time. The line on the graph shows the

actual temperature that might be experienced on the surface

of a test board at or near a central solder joint. The two

profiles are based on a high density and a low density board.

The Vitronics SMD310 convection/infrared reflow soldering

system was used to generate this profile. The type of solder

used was 62/36/2 Tin Lead Silver with a melting point

between 177–189°C. When this type of furnace is used for

solder reflow work, the circuit boards and solder joints tend to

heat first. The components on the board are then heated by

conduction. The circuit board, because it has a large surface

area, absorbs the thermal energy more efficiently, then

distributes this energy to the components. Because of this

effect, the main body of a component may be up to 30

degrees cooler than the adjacent solder joints.

STEP 5

HEATING

ZONES 4 & 7

“SPIKE”

STEP 6 STEP 7

VENT COOLING

STEP 1

PREHEAT

ZONE 1

STEP 4

HEATING

ZONES 3 & 6

“SOAK”

STEP 2

VENT

“SOAK”

STEP 3

HEATING

ZONES 2 & 5

“RAMP”

205° TO

219°C

PEAK AT

SOLDER

JOINT

“RAMP”

170°C

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

200°C

150°C

100°C

50°C

160°C

150°C

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

100°C

140°C

MASS OF ASSEMBLY)

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

MAX

TIME (3 TO 7 MINUTES TOTAL)

Figure 25. Typical Solder Heating Profile

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

2.80

1.20

0.89

0.37

1.78

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.60

1.02

2.50

0.60

0.1102 0.1197

0.0472 0.0551

0.0350 0.0440

0.0150 0.0200

0.0701 0.0807

0.0005 0.0040 0.013

0.0034 0.0070 0.085

0.0180 0.0236

0.0350 0.0401

0.0830 0.0984

0.0177 0.0236

0.45

0.89

2.10

0.45

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

CASE 318–08

ISSUE AE

SOT–23 (TO–236AB)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecificallydisclaimsanyandallliability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA/EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET: http://Design–NET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMUN2211LT1/D

◊

MMUN2233LT1 [MOTOROLA]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E