MC33661D [MOTOROLA]
LIN Enhanced Physical Interface; LIN增强的物理接口
| 型号： | MC33661D |
| 厂家： | 
MOTOROLA |
| 描述： | LIN Enhanced Physical Interface |
| 文件： | 总20页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale Semiconductor, Inc.
MOTOROLA
Document order number: MC33661
Rev 3.0, 10/2004
SEMICONDUCTOR TECHNICAL DATA
Advance Information
33661
LIN Enhanced Physical Interface
Local Interconnect Network (LIN) is a serial communication protocol
designed to support automotive networks in conjunction with Controller Area
Network (CAN). As the lowest level of a hierarchical network, LIN enables
cost-effective communication with sensors and actuators when all the features
of CAN are not required.
LIN INTERFACE
The 33661 is a Physical Layer component dedicated to automotive LIN sub-
bus applications. It offers slew rate selection for optimized operation at
10 kbps and 20 kbps, fast baud rate (above 100 kbps) for test and
programming modes, excellent radiated emission performance, and safe
behavior in the event of LIN bus short-to-ground or LIN bus leakage during
low-power mode.
Features
• Operational from VSUP 6.0 V to 18 V DC, Functional up to 27 V DC, and
Handles 40 V During Load Dump
• Active Bus Waveshaping Offering Excellent Radiated Emission
Performance
D SUFFIX
CASE 751-06
8-TERMINAL SOICN
• 5.0 kV ESD on LIN Bus Terminal
• 30 kΩ Internal Pullup Resistor
ORDERING INFORMATION
Temperature
• LIN Bus Short-to-Ground or High Leakage in Sleep Mode
• -18 V to +40 V DC Voltage at LIN Terminal
• 8.0 µA Standby Current in Sleep Mode
• Local and Remote Wake-Up Capability Reported by INH and RXD
Terminals
Device
Package
Range (T )
A
MC33661D/R2
-40°C to 125°C
8 SOICN
• 5.0 V and 3.3 V Compatible Digital Inputs Without Any External
Components Required
33661 Simplified Application Diagram
VPWR
33661
WAKE
VSUP
INH
EN
12.0 V / 5.0 V
Regulator
MCU
LIN Bus
RXD
TXD
LIN
GND
This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
For More Information On This Product,
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© Motorola, Inc. 2004
Freescale Semiconductor, Inc.
V
SUP
WAKE
EN
20 µA
INH
Control
INH
Control
RXD
TXD
30 kΩ
LIN
Receiver
Slope
Control
GND
Figure 1. 33661 Simplified Internal Block Diagram
33661
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RXD
1
2
3
4
INH
V
8
7
EN
WAKE
TXD
SUP
LIN
6
5
GND
TERMINAL DEFINITIONS
A functional description of each terminal can be found in the System/Application Information section beginning on page 13.
Terminal
Name
Terminal
Formal Name
Definition
RXD
1
2
3
4
5
Receiver Output
Enable Control
Wake Input
MCU interface that reports the state of the LIN bus voltage.
Controls the operation mode of the interface.
EN
WAKE
TXD
A high-voltage input used to wake up the device from sleep mode.
MCU interface to control the state of the LIN output.
Transmitter Input
Inhibit Output
INH
This terminal can have two main functions: controlling an external switchable voltage
regulator or driving a bus external resistor in the master node application.
6
V
Power Supply
Device power supply terminal.
SUP
7
8
LIN
LIN Bus
Ground
Represents the single-wire bus transmitter and receiver.
Device ground terminal.
GND
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MAXIMUM RATINGS
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent
damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Power Supply Voltage
V
V
SUP
Continuous Supply Voltage
Transient Voltage (Load Dump)
27
40
WAKE DC and Transient Voltage (Through a 33 kΩ Serial Resistor)
V
-18 to 40
V
V
V
WAKE
Logic Terminals (RXD, TXD, EN)
V
-0.3 to 5.5
LOG
BUS
LIN
V
DC Voltage
-18 to 40
Transient (Coupled Through 1.0 nF Capacitor)
-150 to 100
INH
V
I
-0.3 to V
+ 0.3
SUP
V
INH
DC Voltage
DC Current
mA
40
INH
ESD Human Body Model (Note 1)
All Terminals
V
V
V
ESD1
±2000
±5000
LIN Terminal with Respect to Ground
ESD Machine Model (Note 2)
All Terminals
V
ESD2
±200
THERMAL RATINGS
°C
Operating Temperature
Ambient
T
-40 to 125
-40 to 150
A
T
Junction
J
Storage Temperature
TS
-40 to 150
150
°C
°C/W
°C
Thermal Resistance Junction to Ambient
Peak Package Reflow Temperature During Solder Mounting (Note 3)
Thermal Shutdown
R
θJA
T
240
SOLDER
T
T
150 to 200
8.0 to 20
°C
SHUT
Thermal Shutdown Hysteresis
°C
HYST
Notes
1. ESD1 testing is performed in accordance with the Human Body Model (C
= 100 pF, R
= 1500 Ω).
ZAP
ZAP
2. ESD2 testing is performed in accordance with the Machine Model (C
= 220 pF, R
= 0 Ω).
ZAP
ZAP
3. Terminal soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
33661
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STATIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
VSUP TERMINAL (DEVICE POWER SUPPLY)
Nominal DC Voltage
V
V
7.0
6.0
13.5
–
18.0
–
V
V
SUP
Functional DC Voltage
SUP
T
≥ 25°C
A
Supply Current in Sleep Mode
≤ 13.5 V, Bus Recessive
µA
V
I
–
–
–
8.0
–
12
200
–
SUP
S1
S2
S3
13.5 V < V
< 18 V
I
SUP
300
V
≤ 13.5 V, Bus Dominant or Shorted to GND
I
SUP
Supply Current in Normal, Slow or Fast Mode
mA
Bus Recessive, Excluding INH Output Current
I
–
–
4.0
6.0
6.0
8.0
S(N-REC)
Bus Dominant, Total Bus Load >500 Ω, Excluding INH Output Current
I
S(N-DOM)
RXD OUTPUT TERMINAL (LOGIC)
Low-Level Voltage Output
V
V
V
OL
I
≤ 1.5 mA
0
–
0.9
IN
High-Level Voltage Output
V
OH
V
V
= 5.0 V, I
= 3.3 V, I
≤ 250 µA
≤ 250 µA
4.25
3.0
–
–
5.25
3.5
EN
EN
OUT
OUT
TXD INPUT TERMINAL (LOGIC)
Low-Level Voltage Input
V
–
–
–
1.2
–
V
V
IL
High-Level Voltage Input
Input Threshold Hysteresis
Pullup Current Source
V
2.5
100
IH
V
300
800
mV
µA
INHYST
I
S1
V
= 5.0 V, 1.0 V < V
< 3.5 V
-60
-35
-20
EN
TXD
ENABLE INPUT TERMINAL (LOGIC)
Low-Level Voltage Input
V
–
–
–
1.2
–
V
V
IL
High-Level Voltage Input
Input Threshold Hysteresis
Low-Level Input Current
V
2.5
100
IH
V
300
800
mV
µA
INHYST
I
IL
V
= 1.0 V
5.0
–
20
20
30
40
IN
High-Level Input Current
= 4.0 V
I
µA
IH
V
IN
LIN BUS TERMINAL (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE)
Low-Level Dominant Voltage
V
V
V
LINlow
External Bus Pullup 500 Ω
–
–
–
1.4
–
High-Level Voltage
V
LINhigh
TXD High, I
= 1.0 µA, Recessive State
V
- 1.0
SUP
OUT
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STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN BUS TERMINAL (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE) (continued)
Pullup Resistor to V
(Normal Mode)
R
20
–
30
20
75
10
47
–
kΩ
µA
mA
µs
SUP
PU
Pullup Current Source (Sleep Mode)
Overcurrent Shutdown Threshold
Overcurrent Shutdown Delay (Note 4)
I
PU
I
50
–
150
–
OV-CUR
I
OV-DELAY
Leakage Current to GND
I
µA
BUS-PAS-REC
Recessive State, 8.0 V ≤ VSUP ≤ 18 V, 8.0 V ≤ VLIN ≤ 18 V
0
-1.0
–
3.0
–
20
1.0
GND Disconnected
I
no GND
mA
µA
V
BUS
V
= V
, V
at -18 V
GND
SUP LIN
Leakage Current to GND
Disconnected, V
I
BUS
V
at +18 V
LIN
1.0
–
10
SUP
LIN Receiver V
V
IL
LIN-VIL
LIN-VIH
0
0.4 VSUP
VSUP
0.525
TXD High, RXD Low
LIN Receiver VIH
V
V
0.6 VSUP
0.475
–
TXD High, RXD High
LIN Receiver Threshold Center
(VLIN-VIH - V )/ 2
V
VSUP
LINTHRES
0.5
LIN-VIL
LIN Receiver Input Hysteresis
LIN-VIH - V
V
VSUP
LINHYST
–
–
–
0.175
–
V
LIN-VIL
LIN Wake-Up Threshold
V
0.5
VSUP
LINWU
INHIBIT OUTPUT TERMINAL
INH Driver ON Resistance (Normal Mode)
INHON
ILEAK
–
0
35
–
70
Ω
Leakage Current (Sleep Mode)
0 < VINH < VSUP
µA
5.0
WAKE TERMINAL
Typical Wake-Up Threshold (EN = 0 V, 7.0 V ≤ VSUP ≤ 18 V) (Note 5)
V
V
V
0.3 VSUP 0.43 VSUP 0.55 VSUP
0.4 VSUP 0.55 VSUP 0.65 VSUP
HIGH-to-LOW Transition
LOW-to-HIGH Transition
THRESHL
WU
WUTHRESLH
Wake-Up Threshold Hysteresis
V
0.1 VSUP 0.16 VSUP 0.2 VSUP
V
HYST
WU
WAKE Input Current
V < 27 V
IWIN1
µA
–
1.0
5.0
Notes
4. This parameter is guaranteed by design; however, it is not production tested.
5. When VSUP > 18 V, the wake-up thresholds remain identical to the wake-up thresholds at 18 V.
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DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LIN OUTPUT TIMING CHARACTERISTICS FOR NORMAL SLEW RATE
Dominant Propagation Delay TXD to LIN (Note 6)
µs
Measurement Threshold (50% TXD to 58.1% VSUP
)
tDOM(MIN)
tDOM(MAX)
–
–
–
–
50
50
Measurement Threshold (50% TXD to 28.4% VSUP
)
Recessive Propagation Delay TXD to LIN (Note 6)
Measurement Threshold (50% TXD to 42.2% VSUP
Measurement Threshold (50% TXD to 74.4% VSUP
µs
µs
)
)
tREC(MIN)
tREC(MAX)
–
–
–
–
50
50
Propagation Delay Symmetry
t
DOM(MIN) to tREC(MAX)
dt
dt
-10.44
-10.44
–
–
8.12
8.12
1
2
tDOM(MAX) to tREC(MIN)
LIN OUTPUT TIMING CHARACTERISTICS FOR SLOW SLEW RATE
Dominant Propagation Delay TXD to LIN (Note 6)
µs
µs
µs
Measurement Threshold (50% TXD to 61.6% VSUP
Measurement Threshold (50% TXD to 25.1% VSUP
)
)
tDOM(MIN)
tDOM(MAX)
–
–
–
–
100
100
Recessive Propagation Delay TXD to LIN (Note 6)
Measurement Threshold (50% TXD to 38.9% VSUP
Measurement Threshold (50% TXD to 77.8% VSUP
)
)
tREC(MIN)
tREC(MAX)
–
–
–
–
100
100
Propagation Delay Symmetry
t
DOM(MIN) to tREC(MAX)
dt
dt
-21.88
-21.88
–
–
17.44
17.44
1S
2S
tDOM(MAX) to tREC(MIN)
LIN OUTPUT DRIVER FAST SLEW RATE
LIN Fast Slew Rate (Programming Mode)
Fast Slew Rate
dv/dt fast
V/µs
–
15
–
LIN RECEIVER CHARACTERISTICS
Receiver Dominant Propagation Delay (Note 7)
LIN LOW to RXD LOW
tRL
µs
µs
µs
–
–
3.5
3.5
–
6.0
6.0
2.0
Receiver Recessive Propagation Delay (Note 7)
LIN HIGH to RXD HIGH
tRH
Receiver Propagation Delay Symmetry
tRL - tRH
tR-SYM
-2.0
Notes
6. 7.0 V ≤ VSUP ≤ 18 V. Bus load R and C : 1.0 nF/1.0 kΩ, 6.8 nF/660 Ω, 10 nF/500 Ω.
0
0
7. Measured between LIN signal threshold LIN-VIL or LIN-VIH and 50% of RXD signal.
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DYNAMIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
SLEEP MODE AND WAKE-UP TIMINGS
LIN Terminal Wake-Up Filter Time (LIN Bus Wake-Up)
Symbol
Min
Typ
Max
Unit
tWUF
tLWUE
tWF
40
–
70
5.0
–
120
15
µs
µs
µs
µs
EN Terminal Wake-Up Time
WAKE Terminal Filter Time
10
70
Sleep Mode Delay
EN HIGH to LOW
tSD
–
40
–
–
–
Delay Between EN and TXD for Mode Selection (Note 8)
Delay Between First TXD after Device Mode Selection (Note 8)
tD_MS
5.0
µs
µs
tD_COM
50
–
–
Notes
8. This parameter is guaranteed by design; however, it is not production tested.
33661
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Timing Diagrams
V
SUP
V
SUP
TXD
RXD
R0
LIN
C0
GND
Note R0 and C0: 1.0 kΩ/1.0 nF, 660 Ω/6.8 nF, and 500 Ω/10 nF.
Figure 2. Test Circuit for Timing Measurements
TXD
Recessive State
V
t
(MAX)
REC
REC
LIN
74.4% V
SUP
58.1% V
SUP
t
(MIN)
DOM
60% V
40% V
SUP
SUP
42.2% V
SUP
28.4% V
SUP
t
(MAX)
DOM
t
(MIN)
REC
RXD
t
t
RH
RL
Figure 3. Timing Measurements for Normal Slew Rate
TXD
Recessive State
t
(MAX)
REC
V
REC
LIN
77.8% V
SUP
61.6% V
SUP
t
(MIN)
DOM
60% V
40% V
SUP
SUP
38.9% V
SUP
25.1% V
SUP
t
(MAX)
DOM
t
(MIN)
REC
RXD
t
t
RH
RL
Figure 4. Timing Measurements for Slow Slew Rate
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Functional Diagrams
EN
EN
INH
INH
tLWUE
tLWUE
TXD
TXD
tD_MS
tD_COM
tD_MS
tD_COM
LIN
LIN
(High Z)
RXD
RXD
(High Z)
Figure 5. EN Terminal Wake-Up and
Normal Baud Rate Selection
Figure 8. EN Terminal Wake-Up and
Slow Baud Rate Selection
WAKE
WAKE
tWF
tWF
INH
EN
INH
EN
TXD
TXD
tD_MS tD_COM
tD_MS
tD_COM
LIN
LIN
RXD
RXD
(High Z)
(High Z)
Figure 6. WAKE Terminal Wake-Up and
Normal Baud Rate Selection
Figure 9. WAKE Terminal Wake-Up and
Slow Baud Rate Selection
Wake-Up Frame
Wake-Up Frame
LIN
0.4 VSUP
tWUF
LIN
0.4 VSUP
tWUF
INH
EN
INH
EN
TXD
TXD
RXD
tD_MS tD_COM
tD_MS tD_COM
(High Z)
RXD
(High Z)
Figure 10. LIN Bus Wake-Up and
Slow Baud Rate Selection
Figure 7. LIN Bus Wake-Up and
Normal Baud Rate Selection
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EN = 1 and TXD = 1
EN
EN
TXD
t
2 (5.0 µs)
EN = 0 and TXD = 1
Reset to Previous Baud Rate
Toggle
t1 (35 µs)
Figure 11. Fast Baud Rate Selection (Toggle Function)
EN
TXD (H)
Sleep Mode
Device in Communication Mode
Preparation to Sleep Mode
t
SD
Figure 12. Sleep Mode Enter
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Unpowered
TXD HIGH and EN LOW > t (35 µs)
1
Fast
TXD HIGH and EN LOW to
HIGH
Toggle function
EN LOW for t < 5.0 µs,
1
then HIGH
Bus or WAKE terminal
wake-up
TXD HIGH and EN LOW to HIGH
Awake
Sleep
Normal
Slow
EN LOW for t < 5.0 µs,
then HIGH
1
TXD LOW and EN
LOW to HIGH
TXD HIGH
EN LOW for t < 5.0 µs,
1
then HIGH
TXD LOW and EN LOW to HIGH
Wait Slow
Toggle function
TXD HIGH and EN LOW > t (35 µs)
1
EN LOW for t < 5.0 µs, then HIGH
1
Fast
Note See Table 1 for explanation of mode transitions.
Figure 13. Mode Transitions
Table 1. Explanation of Mode Transitions
Mode
Bus
INH
EN
TXD
RXD
High impedance. HIGH if external
pullup to V
Sleep
Recessive state, driver off.
20 µA pullup current source.
OFF
LOW
X
DD.
Awake
Normal
Recessive state, driver off.
30 kΩ pullup active.
ON
ON
LOW
HIGH
X
Low. If external pullup, HIGH-to-
LOW transition reports wake-up.
Driver active. 30 kΩ pullup active.
HIGH to enter normal mode. Once in Report bus level:
Slew rate normal (20 kbps).
normal mode: LOW to drive bus in
dominant, HIGH to drive bus in
recessive.
• Low bus dominant
• High bus recessive
Wait
Slow
Recessive state. Driver off.
30 kΩ pullup active.
ON
ON
HIGH
HIGH
LOW
HIGH
Slow
Driver active. 30 kΩ pullup active.
Slew rate slow (10 kbps).
LOW to enter slow mode. Once in
slow mode: LOW to drive bus in
dominant, HIGH to drive bus in
recessive.
Report bus level:
• Low bus dominant
• High bus recessive
Fast
Driver active. 30 kΩ pullup active.
ON
HIGH
LOW to drive bus in dominant, HIGH Report bus level:
Slew rate slow (> 100 kbps).
to drive bus in recessive.
• Low bus dominant
• High bus recessive
X = Don’t care.
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SYSTEM/APPLICATION INFORMATION
INTRODUCTION
The 33661 is a Physical Layer component dedicated to
Digital inputs are 5.0 V and 3.3 V compatible without any
automotive LIN sub-bus applications.
external component required.
The 33661 features include slew rate selection for optimized
operation at 10 kbps and 20 kbps, fast baud rate for test and
programming modes, excellent radiated emission performance,
and safe behavior in case of LIN bus short-to-ground or LIN bus
leakage during low power mode.
The INH output may be used to control an external voltage
regulator or to drive a LIN bus pullup resistor.
FUNCTIONAL TERMINAL DESCRIPTION
level at EN defines the VOH at RXD. The sleep mode is entered
by setting EN LOW while TXD is HIGH. Sleep mode is active
after the t1 filter time (see Figure 12, page 11).
V
Supply Terminal
SUP
The VSUP supply terminal is the power supply terminal for the
33661.
INH Output Terminal
LIN Bus Terminal
The INH output terminal may have two main functions. It may
be used to control an external switchable voltage regulator
having an inhibit input. The high drive capability also allows it to
drive the bus external resistor in the master node application.
This is illustrated in Figures 16 and 17, page 17.
This I/O terminal represents the single-wire bus transmitter
and receiver.
TXD Input Terminal
The TXD input terminal is the MCU interface to control the
state of the LIN output. When TXD is LOW, LIN output is LOW;
when TXD is HIGH, the LIN output transistor is turned OFF. The
threshold is 3.3 V and 5.0 V compatible. The baud rate
selection (normal or slow mode) is done at device wake-up by
the state of the TXD terminal prior to a HIGH level at the EN
terminal (see Figures 5 through 10, page 10).
In sleep mode, INH is turned OFF. If a voltage regulator
inhibit input is connected to INH, the regulator will be disabled.
If the master node pullup resistor is connected to INH, the
pullup resistor will be disabled from the LIN bus.
WAKE Input Terminal
The WAKE terminal is a high-voltage input used to wake up
the device from the sleep mode. WAKE is usually connected to
an external switch in the application. The typical wake thresholds
are VSUP/2.
RXD Output Terminal
The RXD output terminal is the MCU interface, which reports
the state of the LIN bus voltage. LIN HIGH (recessive) is
reported by a high voltage on RXD; LIN LOW (dominant) is
reported by a low voltage on RXD. The RXD output structure is
a CMOS-type push-pull output stage.
The WAKE terminal has a special design structure and
allows wake-up from both HIGH-to-LOW or LOW-to-HIGH
transitions. When entering into sleep mode, the LIN monitors
the state of the WAKE terminal and stores it as a reference
state. The opposite state of this reference state will be the
wake-up event used by the device to enter again into normal
mode.
The low level is fixed. The high level is dependant on the EN
voltage. If EN is set at 3.3 V, RXD VOH is 3.3 V. If EN is set at
5.0 V, RXD VOH is 5.0 V.
An internal filter is implemented (40 µs typical filtering time
delay). WAKE terminal input structure exhibits a high
impedance, with extremely low input current when voltage at
this terminal is below 14 V. When voltage at the WAKE terminal
exceeds 14 V, input current starts to sink into the device. A
serial resistor should be inserted in order to limit the input
current mainly during transient pulses. Recommended resistor
value is 33 kΩ.
In the sleep mode, RXD is high impedance. When a wake-up
event is recognized from WAKE terminal or from the LIN bus
terminal, RXD is pulled LOW to report the wake-up event. An
external pullup resistor may be needed.
EN Input Terminal
The EN input terminal controls the operation mode of the
interface. If EN = 1, the interface is in normal mode, with
transmission path from TXD to LIN and from LIN to RXD both
active. The threshold is 3.3 V and 5.0 V compatible. The high
Important The WAKE terminal should not be left open. If
the wake-up function is not used, WAKE should be connected
to ground to avoid false wake-up.
33661
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OPERATIONAL MODES
Sleep Mode
Introduction
In the sleep mode, the transmission path is disabled and the
33661 is in low power mode. Supply current from VSUP is very
The 33661 has two communication modes, transmitting and
receiving modes, and two operational modes, normal and
sleep. The normal mode is differentiated by the slew rate—
normal, slow, or fast—of the LIN output.
low. Wake-up can occur from LIN bus activity from node internal
wake-up through the EN terminal and from the WAKE input
terminal.
Operational Modes
Normal Mode
In the sleep mode, the 33661 has an internal 20 µA pullup
source to VSUP. This avoids the high current path from the
battery to ground in the event the bus is shorted to ground.
(Refer to succeeding paragraphs describing wake-up
behavior.)
In the normal mode, the 33661 has slew rate and timing
compatible with the LIN protocol specification and can operate
at 20 kbps. This mode is selected after sleep mode by setting
the TXD terminal HIGH prior to setting EN from LOW to HIGH.
Once normal mode is selected, it is impossible to select the
slow mode unless the 33661 is set to sleep mode.
Device Wake-Up Events
The 33661 can be awakened from sleep mode by three
wake-up events: remote wake-up via LIN bus activity, internal
node wake-up via the EN terminal, or toggling the WAKE
terminal.
Slow Mode
In the slow mode, the slew rate is around half the normal
slew rate, and bus speed operation is limited up to 10 kbps. The
radiated emission is significantly reduced compared to the
already excellent emission level of the normal mode. Slow
mode is entered after sleep mode by setting the TXD terminal
LOW prior to setting EN from LOW to HIGH. Once the slow
mode is selected, it is impossible to select the normal mode
unless the device is set to sleep mode.
Remote Wake from LIN Bus
The LIN bus wake-up is recognized by a recessive-to-
dominant transition, followed by a dominant level with a
duration greater than 70 µs, followed by a dominant-to-
recessive transition. This is illustrated in Figures 7 and 10 on
page 10. Once the wake-up is detected, the 33661 enters the
“awake” mode, with INH HIGH and RXD pulled LOW.
Fast Mode
Wake-Up from Internal Node Activity
In the fast mode, the slew rate is around 10 times faster than
the normal mode. This allows very fast data transmission
(>100 kbps)—for instance, for ECU tests and microcontroller
program download. The bus pullup resistor might be reduced to
ensure a correct RC time constant in line with the high baud rate
used. Fast mode is entered via a special sequence (call toggle
function) at the TXD and EN terminals described in Figure 11
on page 11. Fast mode can be selected from either normal or
slow mode. Once in fast mode, the toggle function will bring the
device back in the previously selected mode (normal or slow).
A glitch on EN will also reset the device to the previously
selected mode (normal or slow) as shown in Figure 11 on
page 11.
The 33661 can wake up by internal node activity through a
LOW-to-HIGH transition of the EN terminal. When EN is
switched from LOW to HIGH, the device is awakened and
enters either the “normal” or the “wait slow” mode depending on
the level of TXD input. The MCU must set the TXD terminal
LOW or HIGH prior to waking up the device through the EN
terminal.
Wake-Up from WAKE Terminal
If the WAKE input terminal is toggled, the 33661 enters the
“awake” mode, with INH HIGH and RXD pulled LOW.
Device Power-Up
At power-up (VSUP rises from zero), the 33661 automatically
switches in the “awake” mode. It switches the INH terminal to
HIGH state and RXD to LOW state. The MCU of the application
will then confirm normal or slow mode by setting the TXD and
EN terminals appropriately.
33661
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ELECTROMAGNETIC COMPATIBILITY INFORMATION
Figure 14 displays the results when the device is set in the
Radiated Emission in Normal and Slow Modes
normal mode, optimized for baud rate up to 20 kbps. Figure 15
displays the results when the device is set in the slow mode,
optimized for baud rate up to 10 kbps. The level of emissions is
significantly reduced compared to the already excellent level of
the normal mode.
The 33661 has been tested for radiated emission
performances. Figures 14 and 15 show the results in the
frequency range 100 kHz to 2.0 MHz. Test conditions are in
accordance with CISPR25 recommendations, bus length of
1.5 meter, device loaded with 10 nF and 500 Ω bus impedance.
Figure 14. Radiated Emission in Normal Mode
Figure 15. Radiated Emission in Slow Mode
33661
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APPLICATIONS
Motorola Device Compatibility: 33661 and 33399
The two Motorola devices are terminal-to-terminal
compatible. Table 2 summarizes the differences between the
two devices.
Table 2. Compatibility Comparison
Parameter
33661
33399
Terminal Out and
Package
8-terminal SOICN.
8-terminal SOICN.
Baud Rate Operation
2 baud rate operations: from 1.0 to 10 kbps and from 1.0 to
20 kbps.
1 baud rate operation from 1.0 to 20 kbps.
INH Output
Capable of:
Capable of controlling an external switchable voltage
regulator.
• Controlling an external switchable voltage regulator.
• Driving a bus master termination resistor.
WAKE Terminal
TXD, RXD, EN
Identical to 33399.
Identical to 33661.
5.0 V and 3.3 V compatible.
5.0 V compatible only.
LIN Bus Termination
In normal, slow, and fast mode, 30 kΩ pullup. In sleep mode
and bus short-to-ground, 20 µA pullup.
30 kΩ pullup in normal and sleep modes.
Sleep Current
Mode
Typical 8.0 µA.
Typical 20 µA, maximum 50 µA.
Normal, slow, fast, and sleep modes.
Normal and sleep modes.
Normal Mode
Selected by TXD HIGH, then EN HIGH at device wake-up.
Operation up to 20 kbps.
Selected by TXD high and EN high at device wake-up.
Operation up to 20 kbps.
Slow Mode
Fast Mode
Selected by TXD LOW, then EN HIGH at device wake-up.
Operation up to 10 kbps.
N/A
Selected by sequence at TXD and EN. Operation at baud
rate >100 kbps.
N/A
Sleep Mode
and Bus Wake-Up
Recessive-to-dominant transition, followed by a dominant
state of more than 70 µs, followed by a dominant-to-
recessive transition.
Dominant level, 50 µs duration.
Slew Rate
Three slew rates: Normal (20 kbps), Slow (10 kbps), and
Fast (>100 kbps). Normal and slow mode selected by EN
and TXD terminal sequence at device wake-up. The
sequence to enter normal mode is the same for both the
33399 and 33661.
One slew rate: 20 kbps.
Wake-Up from
Internal Node Activity
(LOW to HIGH
If TXD is set HIGH and then EN is switched HIGH, the
33661 wakes up and the Normal Mode is selected. In this
setup sequence, there is a direct compatibility between
33399 and 33661.
TXD must be set HIGH prior to setting EN HIGH in order to
avoid having the device send a dominant level on the bus at
wake-up.
transition of EN)
Radiated Emission
The level of radiated emissions measured in identical
configurations is lower for the 33661 compared to the 33399
in the normal mode, allowing operation up to 20 kbps. If the
33661 device is set to the slow mode, allowing operation up
to 10 kbps, the radiated emission level is significantly
reduced.
The level of radiated emissions measured in identical
configurations is higher for the 33399 compared to the
33661 in the normal mode.
33661
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Typical Applications
Figures 16 and 17 show typical applications of the 33661.
VBAT
33661
VSUP
> 33 kΩ
WAKE
EN
20 µA
INH
Control
Master Node
Pullup
External
Switch
I/O
MCU
VDD
INH
LIN
Control
*
VDD
1.0 kΩ
RXD
TXD
RXD
TXD
30 kΩ
12 V
VREG
LIN Bus
VDD
Receiver
5.0 V
(* optional)
GND
Slope
Control
Figure 16. Master Node Typical Application
VBAT
33661
VSUP
> 33 kΩ
WAKE
EN
20 µA
INH
Control
External
Switch
I/O
VDD
INH
Control
MCU
*
VDD
RXD
TXD
RXD
30 kΩ
12 V
VREG
LIN Bus
LIN
VDD
Receiver
5.0 V
INH
TXD
GND
Slope
Control
(* optional)
Figure 17. Slave Node Typical Application
33661
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PACKAGE DIMENSIONS
D SUFFIX
8-TERMINAL SOIC NARROW BODY
PLASTIC PACKAGE
CASE 751-06
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
D
A
C
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
8
1
5
4
M
M
B
0.25
H
E
h X 45˚
MILLIMETERS
θ
B
e
DIM
A
A1
B
C
D
E
e
H
h
MIN
1.35
0.10
0.35
0.19
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
A
C
SEATING
PLANE
L
1.27 BSC
0.10
5.80
0.25
0.40
0˚
6.20
0.50
1.25
7˚
A1
B
L
θ
M
S
S
A
0.25
C
B
33661
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NOTES
33661
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Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied
copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee
regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product
or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be
provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license
under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for
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© Motorola, Inc. 2004
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MC33661
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