MAC6075B [MOTOROLA]
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS; 三端双向可控硅4安培RMS 200通过600伏
| 型号： | MAC6075B |
| 厂家： | 
MOTOROLA |
| 描述： | TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
| 文件： | 总8页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by MAC6071/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
•
Sensitive Gate Triggering (A and B versions) Uniquely Compatible for Direct
Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic
Functions
MT1
•
•
•
Gate Triggering 4 Mode — MAC6071A,B, MAC6073A,B, MAC6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
MT2
G
•
Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MT2
CASE 77-08
(TO-225AA)
STYLE 5
G
MT2
MT1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
(1)
Peak Repetitive Off-State Voltage
V
DRM
Volts
(Gate Open, T = 25 to 110°C)
MAC6071A,B
MAC6073A,B
MAC6075A,B
200
400
600
J
On-State Current RMS (T = 85°C)
I
4
Amps
Amps
C
T(RMS)
Peak Surge Current (One Full cycle, 60 Hz, T = –40 to +110°C)
I
30
3.7
10
0.5
5
J
TSM
2
I t
2
A s
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power
P
GM
Watts
Watt
Volts
°C
Average Gate Power
P
G(AV)
Peak Gate Voltage
V
GM
Operating Junction Temperature Range
Storage Temperature Range
T
J
–40 to +110
–40 to +150
8
T
stg
°C
(2)
Mounting Torque (6-32 Screw)
—
in. lb.
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Consult factory for lead bending options.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
3.5
75
Unit
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
θJC
θJA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
I
DRM
(V = Rated V , gate open)
DRM
(T = 25°C)
(T = 110°C)
J
—
—
—
—
10
2.0
µA
mA
D
J
On-State Voltage (Either Direction)
(I = 6 A Peak)
V
V
—
1.3
2.0
Volts
Volts
TM
TM
Peak Gate Trigger Voltage (Continuous dc)
GT
(T = –40°C) (Main Terminal Voltage = 12 Vdc, R = 100 Ohms)
J
L
MT2(+), G(+); MT2(–), G(–)
0.5
0.5
0.8
0.8
1.9
1.9
MT2(+), G(–); MT2(–), G(+)
(T = 110°C)
J
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–), G(+)
0.2
0.2
0.4
0.4
0.9
0.9
(T = 25°C)
J
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–), G(+)
0.4
0.4
0.7
0.7
1.4
1.4
Holding Current (Either Direction)
I
mA
mA
H
(T = –40°C) (Main Terminal Voltage = 12 Vdc, Gate Open)
J
(Initiating Current = 150 mA)
0.4
0.2
2.0
1.0
10
5.0
(T = 25°C)
J
Latching Current
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(V = 6 V)
I
D
L
(I = 8 mA)
T
J
= 25°C
—
—
—
—
2.0
5.0
1.0
2.0
10
20
10
10
G
(I = 8 mA)
G
(I = 8 mA)
G
(I = 15 mA)
G
Gate Trigger Current (Continuous dc)
(V = 12 Vdc, R = 100 Ohms)
MAC6071A, MAC6073A, MAC6075A
I
mA
GT
D
L
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
T
J
= 25°C
0.4
0.4
0.4
0.8
2.0
3.0
3.0
4.5
5.0
5.0
5.0
10
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
T
J
= –40°C
0.8
0.8
0.8
1.6
3.5
4.5
5.0
10
10
10
10
20
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Gate Trigger Current (Continuous dc)
I
mA
GT
(V = 12 Vdc, R = 100 Ohms)
D
L
MAC6071B, MAC6073B, MAC6075B
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
T
= 25°C
0.4
0.4
0.4
0.8
1.5
2.5
2.5
3.5
3.0
3.0
3.0
5.0
J
J
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
T
= –40°C
0.8
0.8
0.8
1.6
3.0
4.0
4.5
7.5
8.0
8.0
8.0
15
Turn-On Time (Either Direction)
t
gt
—
1.5
—
µs
(I
TM
= 14 Adc, I = 100 mAdc)
GT
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Critical Rate of Rise of Off–State Voltage
(di/dt)c
A/ms
(V = 200 V, I = 1.4 A, Commutating dv/dt = 0.5 V /sec,
—
2.2
—
D
TM
Gate Open, T = 110°C, f = 250 Hz, Snubber: C = 0.1 F, R = 56
,
J
S
S
see Figure 16)
Critical Rate of Rise of Off–State Voltage
dv/dt
—
7.0
—
V/ s
(V = Rate V
, Exponential Waveform, R
DRM GK
= OPEN, T = 110°C)
D
J
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
14
0 V
MC7400
LOAD
4
2N6071A
510
Ω
7
115 VAC
60 Hz
–V
EE
V
= 5.0 V
+
EE
QUADRANT DEFINITIONS
MT2(+)
QUADRANT II
QUADRANT I
MT2(+), G(–)
MT2(+), G(+)
G(–)
G(+)
QUADRANT III
QUADRANT IV
MT2(–), G(–)
MT2(–), G(+)
MT2(–)
NOTES:FordetailDigitalInterfacingandSiliconBilateralSwitch(SBS)triggerapplicationinformation,see
the Motorola’s Thyristor Data Book (DL137/D, Revision 6).
1. Interfacing Digital Circuits to Thyristor Controlled AC Loads, page 1.6–25.
2. Silicon Bilateral Switch (SBS) Applications, page 1.6–41.
3
Motorola Thyristor Device Data
110
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
DC
α
180
120
°
°
105
100
95
α
= 30
°
α
= CONDUCTION ANGLE
90
60
= 30
°
60
°
90
°
°
120
°
°
α
α
180
°
90
α
= CONDUCTION ANGLE
DC
85
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
, RMS ON–STATE CURRENT (AMPS)
I , RMS ON–STATE CURRENT (AMPS)
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. Maximum On–State Power
Dissipation
100
10
TYPICAL @ T = 25°C
J
MAXIMUM
10
1.0
MAXIMUM @ T = 110°C
J
1.0
0.1
MAXIMUM @ T = 25°C
J
0.1
0.01
3
4
1 10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
1.0
10
100
1 10
V , INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
T
t, TIME (ms)
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
2.5
2.0
1.5
1.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
Q2 I = 8 mA
G
MT2 NEGATIVE
MT2 POSITIVE
Q4 I = 15 mA
G
2.0 Q1 I = 8 mA
G
0.5
0
1.0
Q3 I = 8 mA
G
0
–40
–20
0
20
40
60
80
100 110
–40
–20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (
°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature (MAC6075B)
4
Motorola Thyristor Device Data
8.0
6.0
4.0
2.0
0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Q4
Q3
Q3
Q2
Q1
Q2
Q4
Q1
–40
–20
0
20
40
60
80
100 110
–40
–20
0
20
40
60
80
100 110
T , JUNCTION TEMPERATURE (
°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 7. Typical Gate Trigger Current versus
Junction Temperature
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
24
30
25
20
R
C
–MT1 = 510
G
T
= 110°C
J
V
= 400 V
T
= 100°
PK
J
22
20
18
16
110°C
500 V
15
10
120°C
600 V
600
100 200
300
400
500
700
800
900 1000
400
450
500
, PEAK VOLTAGE (VOLTS)
550
600
RGK, GATE–MT1 RESISTANCE (OHMS)
V
PK
Figure 9. Typical Exponential Static dv/dt
versus Gate–MT1 Resistance, MT2(+)
Figure 10. Typical Exponential Static dv/dt
versus Peak Voltage, MT2(+)
30
11
R
–MT1 = 510
G
T
= 110°C
J
V
= 400 V
PK
V
= 400 V
PK
25
20
15
10
10.5
10
500 V
600 V
500 V
9.5
9.0
600 V
600
100 200
300
400
500
700
800
900 1000
100
105
110
115
C)
120
T , JUNCTION TEMPERATURE (
°
RGK, GATE–MT1 RESISTANCE (OHMS)
J
Figure 11. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
Figure 12. Typical Exponential Static dv/dt
versus Gate–MT1 Resistance, MT2(–)
5
Motorola Thyristor Device Data
16
16
R
C
–MT1 = 510
R –MT1 = 510
G
G
14
12
14
12
T
= 100°
J
V
= 400 V
PK
500 V
110°C
10
10
600 V
8.0
6.0
8.0
6.0
120
°
C
400
450
500
, PEAK VOLTAGE (VOLTS)
550
600
100
105
110
115
C)
120
V
T , JUNCTION TEMPERATURE (
°
PK
J
Figure 13. Typical Exponential Static dv/dt
versus Peak Voltage, MT2(–)
Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(–)
1.2
T
= 110°C
100°C
90°C
J
1.1
1.0
GATE OPEN
0.9
0.8
0.7
0.6
t
w
1
f
2t
w
6f
I
TM
1000
(di dt)
200 V
c
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
(di/dt)c, CRITICAL RATE OF CHANGE COMMUTATING CURRENT (A/ms)
Figure 15. Critical Rate of Rise of
Commutating Voltage
80 mHY
1N4007
L
L
200 V
RMS
MEASURE
I
ADJUST FOR
R
56
S
I
, 60 Hz V
TM AC
TRIGGER
CHARGE
CONTROL
200 V
0.1
ADJUST FOR
dv/dt
F
C
S
2
1
CHARGE
(c)
1N914
51
5
F
G
NON–POLAR
C
L
NOTE: Component values are for verification of rated (dv/dt) . See AN1048 for additional information.
c
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
6
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–B–
F
NOTES:
C
U
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q
M
–A–
INCHES
MILLIMETERS
DIM
A
B
C
D
F
MIN
MAX
0.435
0.305
0.105
0.026
0.130
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
1
2
3
0.425
0.295
0.095
0.020
0.115
STYLE 5:
PIN 1. MT 1
H
2. MT 2
3. GATE
K
G
H
J
K
M
Q
R
S
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
J
V
TYP
TYP
G
0.148
0.045
0.025
0.145
0.040
0.158
0.055
0.035
0.155
–––
3.76
1.15
0.64
3.69
1.02
4.01
1.39
0.88
3.93
–––
R
M
M
M
0.25 (0.010)
A
B
S
U
V
D 2 PL
M
M
M
0.25 (0.010)
A
B
CASE 77–08
(TO–225AA)
7
Motorola Thyristor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MAC6071/D
◊
相关型号：
MAC6075C
Triac; Max Peak Repetitive Reverse Voltage: 4; Max TMS Bridge Input Voltage: 30; Max DC Reverse Voltage: 2; Capacitance: 20
DIGITRON
©2020 ICPDF网 联系我们和版权申明