MAC223-6 [MOTOROLA]
TRIACs 25 AMPERES RMS 200 thru 800 VOLTS; 三端双向可控硅25安培RMS 200通800伏
| 型号： | MAC223-6 |
| 厂家： | 
MOTOROLA |
| 描述： | TRIACs 25 AMPERES RMS 200 thru 800 VOLTS |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MAC223/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications such as lighting sysjtems,
heater controls, motor controls and power supplies; or wherever full-wave silicon-
gate-controlled devices are needed.
TRIACs
25 AMPERES RMS
200 thru 800 VOLTS
•
•
•
Off-State Voltages to 800 Volts
All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
•
Gate Triggering Guaranteed in Three Modes (MAC223 Series) or Four Modes
(MAC223A Series)
MT2
MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25° unless otherwise noted.)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage
V
DRM
Volts
(1)
(T = –40 to 125°C)
J
(1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC223-4, MAC223A4
MAC223-6, MAC223A6
MAC223-8, MAC223A8
MAC223-10, MAC223A10
200
400
600
800
On-State RMS Current (T = 80°C)
(Full Cycle Sine Wave 50 to 60 Hz)
I
25
Amps
Amps
C
T(RMS)
Peak Non-repetitive Surge Current
I
250
260
TSM
(One Full Cycle, 60 Hz, T = 80°C, preceded and followed by rated current)
C
2
I t
2
A s
Circuit Fusing
(t = 8.3 ms)
Peak Gate Current (t
Peak Gate Voltage (t
Peak Gate Power (t
2 µs)
2 µs)
2 µs)
I
2
Amps
Volts
Watts
Watts
°C
GM
V
P
±10
20
GM
GM
Average Gate Power (T = 80°C, t
8.3 ms)
P
0.5
C
G(AV)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
T
J
–40 to 125
–40 to 150
8
T
°C
stg
—
in. lb.
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
Motorola, Inc. 1995
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.2
60
Unit
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
θJC
θJA
ELECTRICAL CHARACTERISTICS (T = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Peak Blocking Current
I
DRM
(V = Rated V
)
T
J
T
J
= 25°C
= 125°C
—
—
—
—
10
2
µA
mA
D
DRM
Peak On-State Voltage
(I = 35 A Peak, Pulse Width
V
—
1.4
1.85
Volts
mA
TM
2 ms, Duty Cycle
2%)
TM
Gate Trigger Current (Continuous dc)
(V = 12 V, R = 100 Ω)
I
GT
D
L
MT2(+), G(+); MT2( –), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
—
—
20
30
50
75
Gate Trigger Voltage (Continuous dc)
V
GT
Volts
(V = 12 V, R = 100 Ω)
D
L
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
—
—
0.2
1.1
1.3
0.4
2
2.5
—
(V = Rated V
, T = 125°C, R = 10 k)
D
DRM
J
L
MT(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
0.2
—
0.4
10
—
Holding Current
I
H
50
mA
µs
(V = 12 V, I
= 200 mA, Gate Open)
D
TM
Gate Controlled Turn-On Time
(V = Rated V , I = 35 A Peak, I = 200 mA)
t
—
—
—
1.5
40
5
—
—
—
gt
D
DRM TM
Critical Rate of Rise of Off-State Voltage
(V = Rated V , Exponential Waveform, T = 125°C)
G
dv/dt
V/µs
V/µs
D
DRM
Critical Rate of Rise of Commutation Voltage
(V = Rated V , I = 35 A Peak, Commutating
C
dv/dt(c)
D
DRM TM
di/dt = 12.6 A/ms, Gate Unenergized, T = 80°C)
C
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
FIGURE 1 – RMS CURRENT DERATING
FIGURE 2 – ON-STATE POWER DISSIPATION
125
115
105
40
30
20
10
0
95
85
75
0
5.0
10
15
20
25
0
5.0
10
15
20
25
I
, RMS ON-STATE CURRENT (AMPS)
I , RMS ON-STATE CURRENT (AMPS)
T(RMS)
T(RMS)
2
Motorola Thyristor Device Data
FIGURE 4 – GATE TRIGGER VOLTAGE
FIGURE 3 – GATE TRIGGER CURRENT
3.0
2.0
3.0
2.0
V
R
= 12 V
= 100 Ω
V
R
= 12 V
= 100 Ω
D
L
D
L
1.0
0.5
1.0
0.5
0.3
0.2
0.3
0.2
0.1
0.1
–60 –40 –20
0
20
40
60
80
100
120
140
–60 –40 –20
0
20
40
60
80
100
120
140
T , JUNCTION TEMPERATURE (
°C)
T , JUNCTION TEMPERATURE (
°C)
J
J
FIGURE 6 – TYPICAL ON-STATE CHARACTERISTICS
FIGURE 5 – HOLD CURRENT
200
100
50
2.0
1.0
I
= 200 mA
TM
Gate Open
10
T
= 25°C
J
5.0
0.5
1.0
0.5
0.3
0.2
0.1
0.1
0
1.0
2.0
3.0
4.0
–60 –40 –20
0
20
40
60
80
100
120
140
V
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°C)
TM
J
3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
PLANE
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.055
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.39
5.33
3.04
2.79
1.39
6.47
1.27
–––
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
4
3
Q
A
K
STYLE 4:
PIN 1. MAIN TERMINAL 1
1
2
U
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
H
Z
R
L
V
J
T
U
V
G
D
Z
0.080
2.04
N
CASE 221A-04
(TO–220AB)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MAC223/D
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