MAC210A10-AF [MOTOROLA]

800V, 10A, TRIAC, TO-220AB;


型号：	MAC210A10-AF
厂家：	MOTOROLA
描述：	800V, 10A, TRIAC, TO-220AB 栅极触发装置可控硅三端双向交流开关局域网
文件：	总4页 (文件大小：70K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR TECHNICAL DATA

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers,

motor controls, heating controls and power supplies; or wherever full-wave silicon

gate controlled solid-state devices are needed. Triac type thyristors switch from a

blocking to a conducting state for either polarity of applied anode voltage with positive

or negative gate triggering.

TRIACs

10 AMPERES RMS

200 thru 800 VOLTS

•

Blocking Voltage to 800 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

•

Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

Gate Triggering Guaranteed in Three Modes (MAC210 Series) or Four Modes

(MAC210A Series)

MT2

MT1

CASE 221A-04

(TO-220AB)

STYLE 4

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Repetitive Peak Off-State Voltage

DRM

Volts

(T = –40 to +125°C,

1/2 Sine Wave 50 to 60 Hz, Gate Open)

MAC210-4, MAC210A4

MAC210-6, MAC210A6

MAC210-8, MAC210A8

MAC210-10, MAC210A10

200

400

600

800

On-State Current RMS (T = +70°C)

Full Cycle Sine Wave 50 to 60 Hz

Amps

T(RMS)

Peak Non-repetitive Surge Current

100

TSM

(One Full Cycle, 60 Hz, T = +70°C)

Preceded and followed by Rated Current

Circuit Fusing Considerations

(t = 8.3 ms)

I t

A s

Peak Gate Power

(T = +70°C, Pulse Width = 10 µs)

Watts

Average Gate Power (T = +70°C, t = 8.3 ms)

0.35

Watt

G(AV)

Peak Gate Current

(T = +70°C, Pulse Width = 10 µs)

Amps

Operating Junction Temperature Range

Storage Temperature Range

–40 to +125

°C

stg

(1)

for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that

DRM

the voltage ratings of the devices are exceeded.

3–75

Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

2.2

°C/W

θJC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current

DRM

(V = Rated V , Gate Open)

DRM

= 25°C

= +125°C

—

µA

Peak On-State Voltage (Either Direction)

(I = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle

—

1.2

1.65

Volts

2%)

Gate Trigger Current (Continuous dc)

(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)

MT2(+), G(+)

—

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, R = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

volts

—

0.9

1.1

1.4

2.5

(Main Terminal Voltage = Rated V

, R = 10 k ohms,

DRM L

= +125°C)

MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

0.2

—

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,

—

1.5

—

µs

Initiating Current = 500 mA, T = +25°C)

Turn-On Time

(Rated V = 14 A)

, I

= 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)

DRM TM

Critical Rate of Rise of Commutation Voltage

(V = Rated V , I = 14 A, Commutating di/dt = 5.0 A/ms,

dv/dt(c)

dv/dt

V/µs

DRM TM

Gate Unenergized, T = 70°C)

Critical Rate of Rise of Off-State Voltage

100

(V = Rated V

, Exponential Voltage Rise,

Gate Open, T = +70°C)

DRM

3–76

Motorola Thyristor Device Data

FIGURE 1 — CURRENT DERATING

FIGURE 2 — POWER DISSIPATION

14.0

12.0

130

120

CONDUCTION ANGLE = 360

10.0

8.0

110

100

6.0

4.0

2.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

, RMS ON-STATE CURRENT (AMPS)

T(RMS)

FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS

FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT

100

CYCLE

= 70

5.0

°C

= 25°C

= 125°C

f = 60 Hz

2.0

1.0

0.5

Surge is preceded and followed by rated current

1.0

2.0

3.0

5.0

7.0

NUMBER OF CYCLES

0.2

0.1

FIGURE 5 — TYPICAL GATE TRIGGER VOLTAGE

2.0

1.6

1.2

0.8

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4

V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

0.4

–60

–40

–20

, CASE TEMPERATURE (

3–77

Motorola Thyristor Device Data

FIGURE 6 — TYPICAL GATE TRIGGER CURRENT

FIGURE 7 — TYPICAL HOLDING CURRENT

2.8

2.4

2.0

1.6

1.2

0.8

0.4

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

2.0

1.6

1.2

0.8

0.4

–60

–40

–20

–60

–40

–20

, CASE TEMPERATURE (

FIGURE 8 – THERMAL RESPONSE

1.0

0.5

0.2

0.1

= r(t) • R

JC(t)

0.05

0.02

0.01

0.1

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0 k

2.0 k

5.0 k

10 k

t, TIME (ms)

3–78

Motorola Thyristor Device Data

相关型号：