首页 |元器件品牌

C122A1-N [MOTOROLA]

8A, 100V, SCR, TO-220AB;
C122A1-N
型号： C122A1-N
厂家： MOTOROLA    MOTOROLA
描述：

8A, 100V, SCR, TO-220AB

栅极 触发装置 可控硅整流器 局域网
文件： 总3页 (文件大小：69K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SEMICONDUCTOR TECHNICAL DATA  
Reverse Blocking Triode Thyristors  
. . . designed primarily for full-wave ac control applications, such as motor controls,  
heating controls and power supplies; or wherever half-wave silicon gate-controlled,  
solid-state devices are needed.  
SCRs  
8 AMPERES RMS  
50 thru 800 VOLTS  
•
Glass Passivated Junctions and Center Gate Fire for Greater Parameter  
Uniformity and Stability  
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
•
•
Blocking Voltage to 800 Volts  
Different Leadform Configurations,  
Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information  
G
A
K
CASE 221A-04  
(TO-220AB)  
STYLE 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage (T = 25 to 100°C, Gate Open)  
V
DRM  
V
RRM  
Volts  
J
Repetitive Peak Reverse Voltage  
C122F1  
C122A1  
C122B1  
C122D1  
C122M1  
C122N1  
50  
100  
200  
400  
600  
800  
(1)  
Peak Non-repetitive Reverse Voltage  
V
RSM  
Volts  
C122F1  
C122A1  
C122B1  
C122D1  
C122M1  
C122N1  
75  
200  
300  
500  
700  
800  
Forward Current RMS  
(All Conduction Angles)  
T
C
75°C  
I
8
Amps  
Amps  
T(RMS)  
Peak Forward Surge Current  
(1/2 Cycle, Sine Wave, 60 Hz)  
I
90  
34  
TSM  
2
I t  
2
A s  
Circuit Fusing Considerations  
(t = 8.3 ms)  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)  
RRM  
DRM  
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a  
constant current source such that the voltage ratings of the devices are exceeded.  
36  
Motorola Thyristor Device Data  
MAXIMUM RATINGS — continued  
Rating  
Symbol  
Value  
Unit  
Watts  
Watt  
Amps  
°C  
Forward Peak Gate Power (t = 10 µs)  
Forward Average Gate Power  
Forward Peak Gate Current  
P
GM  
5
0.5  
P
G(AV)  
I
2
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
–40 to +100  
–40 to +125  
T
stg  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
1.8  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
I , I  
DRM RRM  
Min  
Typ  
Max  
Unit  
Peak Forward or Reverse Blocking Current  
(V  
AK  
= Rated V  
or V  
, Gate Open)  
RRM  
T
C
T
C
= 25°C  
= 100°C  
—
—
—
—
10  
0.5  
µA  
mA  
DRM  
(1)  
Peak On-State Voltage  
V
—
—
1.83  
Volts  
mA  
TM  
(I = 16 A Peak, T = 25°C)  
TM  
Gate Trigger Current (Continuous dc)  
(V = 6 V, R = 91 Ohms, T = 25°C)  
C
I
GT  
—
—
—
—
25  
40  
D
L
C
C
(V = 6 V, R = 45 Ohms, T = –40°C)  
D
L
Gate Trigger Voltage (Continuous dc)  
(V = 6 V, R = 91 Ohms, T = 25°C)  
V
Volts  
mA  
GT  
—
—
0.2  
—
—
—
1.5  
2
—
D
L
C
(V = 6 V, R = 45 Ohms, T = –40°C)  
D
D
L
C
(V = Rated V  
, R = 1000 Ohms, T = 100°C)  
DRM  
L
C
Holding Current  
I
H
(V = 24 Vdc, I = 0.5 A, 0.1 to 10 ms Pulse,  
D
T
Gate Trigger Source = 7 V, 20 Ohms)  
T
C
T
C
= 25°C  
= –40°C  
—
—
—
—
30  
60  
Turn-Off Time (V = Rated V  
)
t
q
—
50  
—
µs  
D
DRM  
(I  
TM  
= 8 A, I = 8 A)  
R
Critical Rate-of-Rise of Off-State Voltage  
(V = Rated V , Linear, T = 100°C)  
dv/dt  
—
50  
—
V/µs  
D
DRM  
C
1. Pulse Test: Pulse Width = 1 ms, Duty Cycle  
2%.  
FIGURE 1 – CURRENT DERATING (HALF-WAVE)  
FIGURE 2 – CURRENT DERATING (FULL-WAVE)  
100  
90  
CONDUCTION  
ANGLE  
CONDUCTION  
ANGLE  
100  
95  
0
360  
ONE CYCLE OF SUPPLY FREQUENCY  
90  
85  
80  
75  
80  
70  
60  
CONDUCTION  
ANGLE = 60  
120°  
180°  
240°  
360°  
DC  
°
180°  
120°  
90°  
60°  
CONDUCTION  
RESISTIVE OR  
INDUCTIVE LOAD.  
50 TO 400 Hz  
70  
65  
0
360  
ANGLE = 30  
°
CONDUCTION  
ANGLE  
60  
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I
, AVERAGE ON-STATE FORWARD CURRENT (AMPERES)  
I
, AVERAGE ON-STATE CURRENT (AMPERES)  
T(AV)  
T(AV)  
37  
Motorola Thyristor Device Data  
FIGURE 3 – MAXIMUM POWER DISSIPATION (HALF-WAVE) FIGURE 4 – MAXIMUM POWER DISSIPATION (FULL-WAVE)  
14  
12  
10  
8
360°  
240°  
RESISTIVE OR INDUCTIVE LOAD. 50 TO 400 Hz  
DC  
180°  
120°  
10  
8
CONDUCTION  
ANGLE = 60  
°
180°  
6
120°  
90°  
6
60°  
CONDUCTION  
ANGLE 30  
4
CONDUCTION  
ANGLE  
CONDUCTION  
ANGLE  
°
4
2
0
2
0
0
°
360  
°
ONE CYCLE OF SUPPLY FREQUENCY  
RESISTIVE OR INDUCTIVE LOAD. 50 TO 400 Hz  
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I
, AVERAGE ON-STATE CURRENT (AMPERES)  
I
, AVERAGE ON-STATE CURRENT (AMPERES)  
T(AV)  
T(AV)  
38  
Motorola Thyristor Device Data  

相关型号：

C122A1-S

 暂无描述
MOTOROLA

C122A1-T

 8A, 100V, SCR, TO-220AB
MOTOROLA

C122A1-U

 暂无描述
MOTOROLA

C122A1-UA

 Silicon Controlled Rectifier, 8A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-220AB
MOTOROLA

C122A1-W

 Silicon Controlled Rectifier, 8A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-220AB
MOTOROLA

C122A1-WC

 8A, 100V, SCR, TO-220AB
MOTOROLA

C122B

 8-A Silicon Controlled Rectifiers
SSDI

C122B

 Silicon Controlled Rectifier, 8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB,
NEC

C122B1

 SILICON CONTROLLED RECTIFIERS
MOTOROLA

C122B1

 Silicon Controlled Rectifiers Reverse Blocking Thyristors
ONSEMI

C122B1-16

 8A, 200V, SCR, TO-220AB, TO-220, 2 PIN
MOTOROLA

C122B1-A

 8A, 200V, SCR, TO-220AB
MOTOROLA
©2020 ICPDF网 联系我们和版权申明