概述
规格参数
数据手册BCX70KLT1 概述
General Purpose Transistors 通用晶体管 小信号双极晶体管
BCX70KLT1 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 包装说明： | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8541.21.00.75 |
| 风险等级： | 5.03 | Is Samacsys： | N |
| 最大集电极电流 (IC)： | 0.2 A | 基于收集器的最大容量： | 4.5 pF |
| 集电极-发射极最大电压： | 45 V | 配置： | SINGLE |
| 最小直流电流增益 (hFE)： | 100 | JEDEC-95代码： | TO-236AB |
| JESD-30 代码： | R-PDSO-G3 | JESD-609代码： | e0 |
| 元件数量： | 1 | 端子数量： | 3 |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | NPN |
| 功耗环境最大值： | 0.225 W | 认证状态： | Not Qualified |
| 表面贴装： | YES | 端子面层： | Tin/Lead (Sn/Pb) |
| 端子形式： | GULL WING | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管元件材料： | SILICON |
| 标称过渡频率 (fT)： | 125 MHz | 最大关闭时间（toff）： | 800 ns |
| 最大开启时间（吨）： | 150 ns | VCEsat-Max： | 0.55 V |
| Base Number Matches： | 1 |
BCX70KLT1 数据手册
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by BCX70GLT1/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
1
BASE
2
3
EMITTER
MAXIMUM RATINGS
1
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
Value
Unit
Vdc
2
V
CEO
V
CBO
V
EBO
45
45
Vdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Emitter–Base Voltage
5.0
200
Vdc
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
Symbol
Max
Unit
(1)
Total Device Dissipation FR–5 Board
P
225
mW
D
T
= 25°C
A
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
JA
D
P
(2)
Alumina Substrate,
T
A
= 25°C
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
JA
T , T
J stg
–55 to +150
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
V
45
—
—
Vdc
Vdc
(BR)CEO
(I = 2.0 mAdc, I = 0)
C
E
Emitter–Base Breakdown Voltage
(I = 1.0 Adc, I = 0)
V
5.0
(BR)EBO
E
C
Collector Cutoff Current
I
CES
(V
CE
(V
CE
= 32 Vdc)
= 32 Vdc, T = 150°C)
—
—
20
20
nAdc
Adc
A
Emitter Cutoff Current
(V = 4.0 Vdc, I = 0)
I
—
20
nAdc
EBO
EB
1. FR–5 = 1.0
C
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS
Symbol
Min
Max
Unit
DC Current Gain
(I = 10 Adc, V
C CE
h
FE
—
= 5.0 Vdc)
BCX70G
BCX70J
BCX70K
—
40
100
—
—
—
(I = 2.0 mAdc, V
= 5.0 Vdc)
= 1.0 Vdc)
BCX70G
BCX70J
BCX70K
120
250
380
220
460
630
C
CE
(I = 50 mAdc, V
BCX70G
BCX70J
BCX70K
60
90
100
—
—
—
C
CE
Collector–Emitter Saturation Voltage
(I = 50 mAdc, I = 1.25 mAdc)
V
V
Vdc
Vdc
Vdc
CE(sat)
—
—
0.55
0.35
C
B
(I = 10 mAdc, I = 0.25 mAdc)
C
B
Base–Emitter Saturation Voltage
(I = 50 mAdc, I = 1.25 mAdc)
BE(sat)
0.7
0.6
1.05
0.85
C
C
B
B
(I = 50 mAdc, I = 0.25 mAdc)
Base–Emitter On Voltage
(I = 2.0 mAdc, V = 5.0 Vdc)
V
0.55
0.75
BE(on)
C
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
125
—
—
MHz
pF
T
(I = 5.0 Vdc, f = 100 MHz)
V
C = 10 mAdc, CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
4.5
obo
CB
C
Small–Signal Current Gain
h
fe
—
(I = 2.0 mAdc, V
C
= 5.0 Vdc, f = 1.0 kHz)
BCX70G
BCX70J
BCX70K
125
250
350
250
500
700
CE
Noise Figure
NF
—
6.0
dB
(I = 0.2 mAdc, V
= 5.0 Vdc, R = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
S
C
CE
SWITCHING CHARACTERISTICS
Turn–On Time
(I = 10 mAdc, I = 1.0 mAdc)
C
t
t
—
—
150
800
ns
ns
on
B1
Turn–Off Time
(I = 1.0 mAdc, V
B2
off
= 3.6 Vdc, R1 = R2 = 5.0 kΩ, R = 990Ω)
L
BB
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
+3.0 V
t
10 < t < 500 µs
DUTY CYCLE = 2%
1
1
300 ns
DUTY CYCLE = 2%
+10.9 V
<1.0 ns
275
275
+10.9 V
10 k
10 k
0
–0.5 V
<1.0 ns
C
< 4.0 pF*
C < 4.0 pF*
S
S
–9.1 V
1N916
*Total shunt capacitance of test jig and connectors
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(V
= 5.0 Vdc, T = 25°C)
CE
A
20
10
100
I
= 1.0 mA
300
BANDWIDTH = 1.0 Hz
C
BANDWIDTH = 1.0 Hz
= 0
50
20
I
= 1.0 mA
R
≈∞
R
C
S
S
µA
300 µA
100 µA
10
5.0
7.0
5.0
100
µA
2.0
1.0
10
µA
30
µA
0.5
0.2
30
µA
3.0
2.0
10 µA
0.1
10
20
50
100
200
500
1 k
2 k
5 k
10 k
10
20
50
100
200
500
1 k
2 k
5 k
10 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(V
= 5.0 Vdc, T = 25°C)
CE
A
500 k
200 k
1 M
500 k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
100 k
50 k
200 k
100 k
50 k
20 k
20 k
10 k
10 k
5 k
2.0 dB
1.0 dB
5 k
2 k
2 k
1 k
3.0 dB
4.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
6.0 dB
10 dB
500
1 k
500
200
100
50
200
100
10
20 30
50 70 100
200 300
A)
500 700 1 k
10
20 30
50 70 100
200 300
A)
500 700 1 k
I
, COLLECTOR CURRENT (
µ
I
, COLLECTOR CURRENT (µ
C
C
Figure 5. Narrow Band, 100 Hz
Figure 6. Narrow Band, 1.0 kHz
500 k
200 k
10 Hz to 15.7 kHz
100 k
50 k
Noise Figure is defined as:
20 k
2
R
n S
2
1 2
2
e
n
4KTR
4KTR
I
S
10 k
5 k
NF
20 log
10
S
1.0 dB
e
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
n
2 k
1 k
2.0 dB
I
n
3.0 dB
–23
= Boltzman’s Constant (1.38 x 10
K
T
R
j/°K)
500
= Temperature of the Source Resistance (°K)
5.0 dB
8.0 dB
= Source Resistance (Ohms)
200
100
50
S
20 30
50 70 100
200 300
500 700 1 k
10
I
, COLLECTOR CURRENT (µA)
C
Figure 7. Wideband
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
TYPICAL STATIC CHARACTERISTICS
400
200
T
= 125°C
J
25°C
–55°C
100
80
60
V
V
= 1.0 V
= 10 V
CE
CE
40
0.004 0.006 0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
3.0
2.0
5.0 7.0 10
20
30
50 70 100
I
, COLLECTOR CURRENT (mA)
C
Figure 8. DC Current Gain
1.0
0.8
100
T
= 25°C
A
T
= 25°C
J
I
= 500
400
µ
A
B
PULSE WIDTH = 300
DUTY CYCLE 2.0%
µ
s
≤
80
60
µA
300
200
µA
I
= 1.0 mA
10 mA
50 mA
100 mA
C
0.6
0.4
0.2
0
µ
A
40
20
0
100
µA
0.002 0.005 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
0
5.0
10
15
20
25
30
35
40
I
, BASE CURRENT (mA)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
B
CE
Figure 9. Collector Saturation Region
Figure 10. Collector Characteristics
1.4
1.2
1.6
0.8
0
*APPLIES for I /I
≤ h
/2
T
= 25
°
C
C B
FE
J
25°C to 125°C
1.0
0.8
0.6
0.4
*
for V
CE(sat)
VC
V
BE(sat)
@ I /I = 10
C B
–55°C to 25°C
–0.8
–1.6
–2.4
V
@ V = 1.0 V
CE
BE(on)
25°C to 125°C
0.2
0
–55°C to 25°C
for V
BE
VB
0.2
V
@ I /I = 10
C B
CE(sat)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50 100
0.1
0.5
1.0
2.0
5.0
10
20
50 100
I
, COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL DYNAMIC CHARACTERISTICS
300
200
1000
V
= 3.0 V
/I = 10
CC
700
500
I
C B
= 25°C
t
s
T
J
100
70
300
200
50
t
r
100
70
30
20
t
f
50
t
@ V = 0.5 Vdc
BE(off)
d
V
= 3.0 V
/I = 10
10
CC
30
20
I
I
C B
= I
7.0
5.0
B1 B2
= 25°C
T
J
3.0
1.0
10
1.0
2.0 3.0
I
5.0 7.0 10
20 30
50 70 100
2.0 3.0
5.0 7.0 10
, COLLECTOR CURRENT (mA)
C
20
30
50 70 100
, COLLECTOR CURRENT (mA)
I
C
Figure 13. Turn–On Time
Figure 14. Turn–Off Time
500
10
7.0
5.0
T
J
= 25°C
f = 1.0 MHz
T
= 25
°
C
J
f = 100 MHz
300
200
C
ib
V
= 20 V
CE
5.0 V
C
ob
3.0
2.0
100
70
50
1.0
0.05 0.1
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
0.2
0.5
V , REVERSE VOLTAGE (VOLTS)
R
1.0
2.0
5.0
10
20
50
I
, COLLECTOR CURRENT (mA)
C
Figure 15. Current–Gain — Bandwidth Product
Figure 16. Capacitance
20
10
200
V
= 10 Vdc
V
= 10 Vdc
CE
f = 1.0 kHz
= 25
CE
f = 1.0 kHz
= 25
100
h
≈ 200 @ I = 1.0 mA
C
fe
T
°C
T
°C
A
A
7.0
5.0
70
50
h
≈ 200 @ I = 1.0 mA
C
fe
3.0
2.0
30
20
1.0
0.7
0.5
10
7.0
5.0
0.3
0.2
3.0
2.0
0.1
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.2
0.5
1.0
I , COLLECTOR CURRENT (mA)
C
2.0
5.0
10
20
50
100
I
, COLLECTOR CURRENT (mA)
C
Figure 17. Input Impedance
Figure 18. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
FIGURE 19A
0.05
DUTY CYCLE, D = t /t
1 2
P
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
(pk)
0.02
0.01
0.03
0.02
t
READ TIME AT t (SEE AN–569)
1
1
Z
T
= r(t)
•
R
SINGLE PULSE
θ
J(pk)
JA(t)
θ
JA
t
2
– T = P
Z
θJA(t)
A
(pk)
0.01
0.01 0.02
0.05 0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
100 k
50 k
t, TIME (ms)
Figure 19. Thermal Response
4
10
10
10
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V
= 30 Vdc
CC
A train of periodical power pulses can be represented by the model
as shown in Figure 19A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 19 was calculated for various duty cycles.
3
2
I
CEO
To find Z
steady state value R
, multiply the value obtained from Figure 19 by the
θJA(t)
.
1
0
θJA
10
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
I
CBO
AND
10
t
= 1.0 ms, t = 5.0 ms. (D = 0.2)
I
@ V
= 3.0 Vdc
1
2
CEX
BE(off)
–1
10
10
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
–2
The peak rise in junction temperature is therefore
∆T = r(t) x P
(pk) θJA
For more information, see AN–569.
–4
0
–2
0
0
+20 +40 +60 +80 +100 +120 +140 +160
T , JUNCTION TEMPERATURE ( C)
x R
= 0.22 x 2.0 x 200 = 88°C.
°
J
Figure 19A.
400
200
100
10
µs
The safe operating area curves indicate I –V limits of the
CE
1.0 ms
C
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
µs
1.0 s
100
T
= 25°C
C
The data of Figure 20 is based upon T
= 150°C; T or T is
C A
dc
J(pk)
variable depending upon conditions. Pulse curves are valid for duty
cyclesto10%providedT ≤ 150°C. T maybecalculatedfrom
60
40
T
= 25°C
A
dc
J(pk)
J(pk)
the data in Figure 19. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
20
10
T = 150°C
J
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
4.0
40
2.0
4.0 6.0 8.0 10
20
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 20.
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
SOLDERING PRECAUTIONS
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
A
values provided on the data sheet for the SOT–23 package,
P
can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 225 milliwatts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
556°C/W
P
=
= 225 milliwatts
D
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
PACKAGE DIMENSIONS
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
1
2
INCHES
MIN MAX
MILLIMETERS
DIM
A
B
C
D
G
H
J
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.60
1.02
2.50
0.60
V
G
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
C
K
L
S
H
J
D
V
K
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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BCX70GLT1/D
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BCX70KLT1 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BCX70KLT3 | ONSEMI | 200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, 3 PIN | 获取价格 |
|
| BCX70KLX | ALLEGRO | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | 获取价格 |
|
| BCX70KR | ZETEX | SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR | 获取价格 |
|
| BCX70KR | ALLEGRO | Transistor | 获取价格 |
|
| BCX70KR-P9 | ZETEX | SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR | 获取价格 |
|
| BCX70KRLK | ALLEGRO | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | 获取价格 |
|
| BCX70KRLO | ALLEGRO | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | 获取价格 |
|
| BCX70KRLT | ALLEGRO | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | 获取价格 |
|
| BCX70KRLX | ALLEGRO | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | 获取价格 |
|
| BCX70KRTA | ZETEX | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 |
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