BC450A [MOTOROLA]
High Voltage Transistors; 高电压晶体管
| 型号： | BC450A |
| 厂家： | 
MOTOROLA |
| 描述： | High Voltage Transistors |
| 文件： | 总6页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BC450/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
2
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
–100
–100
–5.0
Unit
Vdc
3
V
CEO
V
CBO
V
EBO
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Vdc
Vdc
Collector Current — Continuous
I
C
–300
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
V
–100
–100
–5.0
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
(I = –1.0 mAdc, I = 0)
C
B
Collector–Base Breakdown Voltage
(I = –100 A, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = –10 Adc, I = 0)
V
—
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = –80 Vdc, I = 0)
I
–100
nAdc
CBO
CB
E
ON CHARACTERISTICS*
DC Current Gain
(I = –2.0 mA, V
C
h
FE
—
= –5.0 V)
= –5.0 V)
BC450
BC450A
BC450
BC450A
BC450
BC450A
50
120
50
100
50
—
—
—
—
—
—
460
220
—
—
—
CE
(I = –10 mA, V
C
CE
(I = –100 mA, V
C CE
= –5.0 V)
60
—
1. Pulse Test: Pulse Width
300 s, Duty Cycle 2.0%.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
ON CHARACTERISTICS
(Continued)
Collector–Emitter Saturation Voltage
(I = –100 mAdc, I = –10 mAdc)
V
—
—
–0.125
–0.85
–0.25
—
Vdc
Vdc
Vdc
CE(sat)
C
B
Base–Emitter Saturation Voltage
(I = –100 mAdc, I = –10 mAdc)
V
BE(sat)
C
B
Base–Emitter On Voltage
V
BE(on)
(I = –2.0 mA, V
(I = –100 mA, V
C CE
= –5.0 V)
= –5.0 V)*
–0.55
—
—
–0.76
–0.7
–1.2
C
CE
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
100
200
—
MHz
(I = –50 mAdc, V
CE
= –5.0 Vdc, f = 100 MHz)
C
1. Pulse Test: Pulse Width
300 s, Duty Cycle 2.0%.
TURN–ON TIME
TURN–OFF TIME
+V
BB
V
V
–1.0 V
100
CC
+40 V
CC
+40 V
5.0 µs
R
100
R
L
L
+10 V
0
OUTPUT
OUTPUT
R
R
B
V
V
in
B
in
5.0
µF
5.0 µF
t = 3.0 ns
r
100
100
*C < 6.0 pF
*C < 6.0 pF
S
S
5.0
µs
t = 3.0 ns
r
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
300
200
40
20
T
= 25°C
J
T
= 25°C
J
C
–5.0 V
ibo
V
= –1.0 V
CE
10
100
8.0
70
50
6.0
4.0
C
obo
30
–1.0
2.0
–0.1 –0.2
–2.0 –3.0
I
–5.0 –7.0 –10
–20 –30
–50 –70 –100
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100
, COLLECTOR CURRENT (mA)
V
, REVERSE VOLTAGE (VOLTS)
C
R
Figure 2. Current–Gain — Bandwidth Product
Figure 3. Capacitance
1000
700
500
V
= –40 V
/I = 10
CC
I
I
T
C B
= I
B1 B2
t
s
300
200
= 25°C
J
100
70
t
f
50
t
r
30
20
t
@ V
= –0.5 V
–30
d
BE(off)
10
–10
–20
I
–50
–70
–100
–200
, COLLECTOR CURRENT (mA)
C
Figure 4. Switching Times
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P
(pk)
t
1
0.02
0.1
t
2
0.01
0.07
0.05
DUTY CYCLE, D = t /t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
1 2
SINGLE PULSE
0.03
0.02
SINGLE PULSE
READ TIME AT t (SEE AN–469)
1
(pk)
(pk)
Z
Z
= r(t)
= r(t)
•
•
R
θ
θ
JC(t)
JA(t)
θ
JC
JA
T
T
– T = P
Z
Z
θ
J(pk)
J(pk)
C
θJC(t)
R
θ
– T = P
A
JA(t)
50 k
0.01
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
100 k
t, TIME (ms)
Figure 5. Thermal Response
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
–1K
1.0
0.8
T
= 25°C
J
–500
V
@ I /I = 10
C B
BE(sat)
–200
–100
–50
0.6
0.4
V
@ V
= 5.0 V
BE
CE
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURRENT LIMIT
0.2
0
–20
–10
V
@ I /I = 10
C B
CE(sat)
DUTY CYCLE
≤
10%
BC450
–20
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
–1.0
–2.0
–5.0
–10
–50
–80
I
, COLLECTOR CURRENT (mA)
V
, COLLECTOR–EMITTER VOLTAGE (V)
C
CE
Figure 7. “On” Voltages
Figure 6. Active Region — Safe Operating Area
2.0
–1.0
–1.4
T
= 25°C
J
1.6
1.2
0.8
0.4
0
–1.8
20 mA
100 mA
200 mA
50 mA
R
for V
VB BE
θ
–55°C to 125°C
–2.2
–2.6
–3.0
I
=
C
10 mA
0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
0.2
0.5
1.0
2.0
I , COLLECTOR CURRENT (mA)
C
5.0
10
20
50
100 200
I
, BASE CURRENT (mA)
B
Figure 8. Collector Saturation Region
Figure 9. Base–Emitter Temperature Coefficient
300
200
V
= –5.0 V
T
= 125°C
CE
J
25°C
100
70
–55°C
50
30
–0.2
–0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–70 –100
–200
I
, COLLECTOR CURRENT (mA)
C
Figure 10. DC Current Gain
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0
0.8
2.0
1.6
T
= 25°C
J
I
=
C
V
@ I /I = 10
C B
BE(sat)
10 mA
20 mA
50 mA
100 mA
200 mA
0.6
0.4
0.2
0
1.2
0.8
0.4
0
V
@ V = 5.0 V
CE
BE
V
@ I /I = 10
C B
CE(sat)
T
= 25°C
J
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
I
, COLLECTOR CURRENT (mA)
I , BASE CURRENT (mA)
B
C
Figure 11. “On” Voltages
Figure 12. Collector Saturation Region
–1.0
–1.4
–1.8
R
for V
VB BE
θ
–55°C to 125°C
–2.2
–2.6
–3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
, COLLECTOR CURRENT (mA)
C
Figure 13. Base–Emitter Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
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BC450/D
◊
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