BAV99LT1 [MOTOROLA]
Dual Series Switching Diode; 双系列开关二极管
| 型号： | BAV99LT1 |
| 厂家： | 
MOTOROLA |
| 描述： | Dual Series Switching Diode |
| 文件： | 总6页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BAV99LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
3
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
70
Unit
Vdc
mAdc
mAdc
V
Reverse Voltage
Forward Current
V
R
ANODE
1
CATHODE
2
I
F
215
500
70
Peak Forward Surge Current
I
FM(surge)
3
CATHODE/ANODE
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
V
RRM
(1)
I
715
mA
F(AV)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
I
450
mA
A
FRM
I
FSM
t = 1.0
s
2.0
1.0
0.5
t = 1.0 ms
t = 1.0 A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
(1)
T = 25°C
A
P
225
mW
D
FR–5 Board,
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance Junction to Ambient
Total Device Dissipation
R
JA
D
P
(2)
Alumina Substrate,
T
A
= 25°C
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
JA
T , T
J stg
–65 to +150
BAV99LT1 = A7
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued) (EACH DIODE)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
= 100 µA)
V
70
—
Vdc
Adc
(BR)
(BR)
Reverse Voltage Leakage Current (V = 70 Vdc)
I
R
—
—
—
2.5
30
50
R
(V = 25 Vdc, T = 150°C)
R
J
J
(V = 70 Vdc, T = 150°C)
R
Diode Capacitance
(V = 0, f = 1.0 MHz)
C
V
—
1.5
pF
D
R
Forward Voltage (I = 1.0 mAdc)
—
—
—
—
715
855
1000
1250
mVdc
F
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Reverse Recovery Time (I = I = 10 mAdc, i
= 1.0 mAdc) (Figure 1) R = 100
t
rr
—
—
6.0
ns
V
F
R
R(REC)
L
Forward Recovery Voltage (I = 10 mA, t = 20 ns)
V
FR
1.75
F
r
820
Ω
+10 V
2 k
0.1 µF
I
F
t
t
t
r
p
I
F
100 µH
t
rr
t
10%
90%
0.1
µF
DUT
50
Ω
OUTPUT
PULSE
GENERATOR
50 Ω INPUT
i
= 1 mA
SAMPLING
OSCILLOSCOPE
R(REC)
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; measured
INPUT SIGNAL
F
R
at i
= 1 mA)
R(REC)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t » t
rr
p
Figure 1. Recovery Time Equivalent Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
CURVES APPLICABLE TO EACH DIODE
100
10
10
T
= 150
°
C
C
A
T
= 125
°
A
1.0
0.1
T
= 85°C
T = 85°C
A
A
T
= 25°C
A
1.0
0.1
T
= 55
°C
A
0.01
T
= –40
°C
A
T
= 25
°C
A
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
V , REVERSE VOLTAGE (VOLTS)
R
30
40
50
V , FORWARD VOLTAGE (VOLTS)
F
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
SOLDERING PRECAUTIONS
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
A
values provided on the data sheet for the SOT–23 package,
P
can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 225 milliwatts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
556°C/W
P
=
= 225 milliwatts
D
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
1
2
INCHES
MIN MAX
MILLIMETERS
DIM
A
B
C
D
G
H
J
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.60
1.02
2.50
0.60
V
G
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
K
L
S
C
V
H
J
D
K
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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BAV99LT1/D
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