首页 |元器件品牌

2N6399-AN [MOTOROLA]

12A, 800V, SCR, TO-220AB;
2N6399-AN
型号： 2N6399-AN
厂家： MOTOROLA    MOTOROLA
描述：

12A, 800V, SCR, TO-220AB

触发装置 可控硅整流器 局域网
文件： 总6页 (文件大小：115K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Order this document  
by 2N6394/D  
SEMICONDUCTOR TECHNICAL DATA  
Reverse Blocking Triode Thyristors  
Motorola preferred devices  
. . . designed primarily for half-wave ac control applications, such as motor controls,  
heating controls and power supplies.  
SCRs  
•
•
•
Glass Passivated Junctions with Center Gate Geometry for Greater Parameter  
Uniformity and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High  
Heat Dissipation and Durability  
12 AMPERES RMS  
50 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
G
K
A
CASE 221A-07  
(TO-220AB)  
STYLE 3  
*MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
, V  
Value  
Unit  
(1)  
Peak Repetitive Forward and Reverse Blocking Voltage  
V
Volts  
DRM RRM  
(Gate Open, T = –40 to 125°C)  
2N6394  
2N6395  
2N6397  
2N6398  
2N6399  
50  
J
100  
400  
600  
800  
RMS On–State Current (T = 90°C) (All Conduction Angles)  
I
12  
Amps  
Amps  
C
T(RMS)  
Peak Non-Repetitive Surge Current  
I
100  
TSM  
(1/2 Cycle, Sine Wave, 60 Hz, T = 125°C)  
J
2
2
Circuit Fusing (t = 8.3 ms)  
Forward Peak Power  
I t  
40  
20  
0.5  
2
A s  
P
Watts  
Watt  
Amps  
°C  
GM  
Forward Average Gate Power  
Forward Peak Gate Current  
Operating Junction Temperature Range  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
P
G(AV)  
I
GM  
T
J
–40 to +125  
–40 to +150  
T
°C  
stg  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
*Indicates JEDEC Registered Data.  
R
2
°C/W  
θJC  
1. V  
and V  
for alltypes canbe appliedon a continuous basis. Ratings apply for zeroor negativegate voltage;however, positivegate  
RRM  
DRM  
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current  
source such that the voltage ratings of the devices are exceeded.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1999  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
I , I  
DRM RRM  
Min  
Typ  
Max  
Unit  
*Peak Repetitive Forward or Reverse Blocking Current  
(V  
AK  
= Rated V  
DRM  
or V  
, Gate Open)  
RRM  
T = 25°C  
T = 125°C  
J
—
—
—
—
10  
2
µA  
mA  
J
*Forward “On” Voltage  
(I = 24 A Peak)  
V
—
1.7  
2.2  
Volts  
mA  
TM  
TM  
*Gate Trigger Current (Continuous dc)  
(V = 12 Vdc, R = 100 Ohms)  
I
—
5
30  
GT  
D
L
*Gate Trigger Voltage (Continuous dc)  
V
V
Volts  
GT  
GD  
(V = 12 Vdc, R = 100 Ohms)  
—
0.2  
0.7  
—
1.5  
—
D
L
(V = Rated V  
D
, R = 100 Ohms, T = 125°C)  
DRM  
L
J
*Holding Current  
(V = 12 Vdc, Gate Open)  
D
I
—
—
6
40  
mA  
µs  
H
Turn-On Time  
t
gt  
1
2
(I  
TM  
= 12 A, I  
= 40 mAdc, V = Rated V )  
DRM  
GT  
D
Turn-Off Time (V = Rated V  
)
t
q
µs  
D
DRM  
(I  
TM  
(I  
TM  
= 12 A, I = 12 A)  
—
—
15  
35  
—
—
R
= 12 A, I = 12 A, T = 125°C)  
R
J
Critical Rate–of–Rise of Off-State Voltage Exponential  
(V = Rated V , T = 125°C)  
dv/dt  
—
50  
—
V/µs  
D
DRM  
J
*Indicates JEDEC Registered Data.  
FIGURE 1 — CURRENT DERATING  
FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION  
20  
18  
130  
125  
120  
115  
110  
105  
100  
16  
α
α
180°  
dc  
α
= CONDUCTION ANGLE  
α = CONDUCTION ANGLE  
14  
12  
90°  
60°  
α
= 30°  
10  
8.0  
6.0  
4.0  
dc  
T
≈ 125°C  
J
60°  
α
= 30°  
95  
90  
2.0  
0
90  
°
180°  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
I
, AVERAGE ON-STATE CURRENT (AMPS)  
I
, AVERAGE ON-STATE CURRENT (AMPS)  
T(AV)  
T(AV)  
2
Motorola Thyristor Device Data  
FIGURE 3 — ON–STATE CHARACTERISTICS  
FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT  
100  
100  
T
= 25  
°C  
1 CYCLE  
J
95  
90  
70  
50  
125°C  
85  
80  
75  
70  
65  
60  
30  
20  
T
= 125°C  
f = 60 Hz  
J
10  
SURGE IS PRECEDED AND  
FOLLOWED BY RATED CURRENT  
55  
50  
7.0  
5.0  
1.0  
2.0  
3.0  
4.0  
6.0  
8.0  
10  
NUMBER OF CYCLES  
3.0  
2.0  
1.0  
0.7  
0.5  
0.3  
0.2  
0.1  
0.4  
1.2  
2.0  
2.8  
3.6  
4.4  
5.2  
6.0  
v
, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)  
TH  
FIGURE 5 — THERMAL RESPONSE  
1.0  
0.7  
0.5  
0.3  
0.2  
Z
= R •  
θJC  
r(t)  
θ
JC(t)  
0.1  
0.07  
0.05  
0.03  
0.02  
0.01  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
20 30  
50  
100  
200 300  
500  
1.0 k  
2.0 k 3.0 k 5.0 k  
10 k  
t, TIME (ms)  
3
Motorola Thyristor Device Data  
TYPICAL CHARACTERISTICS  
FIGURE 7 — GATE TRIGGER CURRENT  
FIGURE 6 — PULSE TRIGGER CURRENT  
300  
200  
3.0  
2.0  
OFF-STATE VOLTAGE = 12 V  
OFF-STATE VOLTAGE = 12 V  
100  
70  
50  
1.0  
0.7  
0.5  
30  
20  
T
= –40°C  
J
25°C  
10  
7.0  
5.0  
100°C  
3.0  
0.3  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
–40 –20  
0
20  
40  
60  
80  
100  
C)  
120  
140  
160  
PULSE WIDTH ( s)  
T , JUNCTION TEMPERATURE (  
°
J
FIGURE 8 — GATE TRIGGER VOLTAGE  
FIGURE 9 — HOLDING CURRENT  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
30  
20  
OFF-STATE VOLTAGE = 12 V  
OFF-STATE VOLTAGE = 12 V  
10  
7.0  
5.0  
0.5  
0.4  
3.0  
–60 –40  
–20  
0
20  
40  
60  
80  
100  
120  
140  
–60 –40  
–20  
0
20  
40  
60  
80  
100  
120 140  
T , JUNCTION TEMPERATURE (  
°C)  
T , JUNCTION TEMPERATURE (°C)  
J
J
4
Motorola Thyristor Device Data  
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
SEATING  
PLANE  
–T–  
B
F
C
INCHES  
MIN  
MILLIMETERS  
T
S
DIM  
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.022  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
–––  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.36  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
–––  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.55  
14.27  
1.52  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
–––  
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.014  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
–––  
4
3
Q
A
K
1
2
U
H
Z
R
J
L
T
U
V
V
G
Z
0.080  
2.04  
D
STYLE 3:  
PIN 1. CATHODE  
N
2. ANODE  
3. GATE  
4. ANODE  
CASE 221A–07  
ISSUE Z  
5
Motorola Thyristor Device Data  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola  
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”  
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of  
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury  
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
Motorola was negligent regarding the design or manufacture of the part. Motorola and  
Opportunity/Affirmative Action Employer.  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal  
Mfax is a trademark of Motorola, Inc.  
How to reach us:  
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141,  
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488  
Customer Focus Center: 1–800–521–6274  
Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609  
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
Motorola Fax Back System  
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
– http://sps.motorola.com/mfax/  
HOME PAGE: http://motorola.com/sps/  
2N6394/D  
◊

相关型号：

2N6399-AS

 Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MOTOROLA

2N6399-AU

 Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MOTOROLA

2N6399-BA

 12A, 800V, SCR, TO-220AB
MOTOROLA

2N6399-BC

 12A, 800V, SCR, TO-220AB
MOTOROLA

2N6399-BD

 暂无描述
MOTOROLA

2N6399-BG

 12A, 800V, SCR, TO-220AB
MOTOROLA

2N6399-BL

 Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MOTOROLA

2N6399-BR

 Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MOTOROLA

2N6399-BS

 12A, 800V, SCR, TO-220, 2 PIN
MOTOROLA

2N6399-BU

 12A, 800V, SCR, TO-220AB, TO-220, 2 PIN
MOTOROLA

2N6399-BV

 Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220, 3 PIN
MOTOROLA

2N6399-C

 Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MOTOROLA
©2020 ICPDF网 联系我们和版权申明