2N6349A-BS [MOTOROLA]
800V, 12A, TRIAC, TO-220, 2 PIN;
| 型号： | 2N6349A-BS |
| 厂家： | 
MOTOROLA |
| 描述： | 800V, 12A, TRIAC, TO-220, 2 PIN 栅极 触发装置 可控硅 三端双向交流开关 |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by 2N6342/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)
or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)
For 400 Hz Operation, Consult Factory
MT1
•
•
12 Ampere Devices Available as 2N6342A thru 2N6349A
MT2
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
*Peak Repetitive Off-State Voltage
V
DRM
Volts
(Gate Open, T = –40 to +110°C)
J
1/2 Sine Wave 50 to 60 Hz, Gate Open
2N6342, 2N6346
2N6343, 2N6347
2N6344, 2N6348
2N6345, 2N6349
200
400
600
800
*RMS On-State Current
Full Cycle Sine Wave 50 to 60 Hz
(T = +80°C)
(T = +90°C)
C
I
8
4
Amps
Amps
C
T(RMS)
*Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T = +80°C)
Preceded and followed by Rated Current
I
100
TSM
C
2
I t
2
A s
Circuit Fusing
(t = 8.3 ms)
40
*Peak Gate Power (T = +80°C, Pulse Width = 2 µs)
P
20
0.5
2
Watts
Watt
Amps
Volts
°C
C
GM
*Average Gate Power (T = +80°C, t = 8.3 ms)
P
G(AV)
C
*Peak Gate Current
I
GM
*Peak Gate Voltage
V
GM
10
*Operating Junction Temperature Range
*Storage Temperature Range
T
–40 to +125
–40 to +150
J
T
°C
stg
1. V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
REV 1
Motorola, Inc. 1995
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
2.2
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C, and Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
*Peak Blocking Current
(V = Rated V , gate open)
I
DRM
T
J
T
J
= 25°C
= 100°C
—
—
—
—
10
2
µA
mA
D
DRM
*Peak On-State Voltage
(I = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
V
—
1.3
1.55
Volts
mA
TM
TM
Gate Trigger Current (Continuous dc)
(V = 12 Vdc, R = 100 Ohms)
I
GT
D
L
(Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+) All Types
MT2(+), G(–) 2N6346 thru 49
MT2(–), G(–) All Types
—
—
—
—
—
—
12
12
20
35
—
—
50
75
50
75
100
125
MT2(–), G(+) 2N6346 thru 49
*MT2(+), G(+); MT2(–), G(–) T = –40°C All Types
C
*MT2(+), G(–); MT2(–), G(+) T = –40°C 2N6346 thru 49
C
Gate Trigger Voltage (Continuous dc)
V
GT
Volts
(V = 12 Vdc, R = 100 Ohms)
D
L
(Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+) All Types
MT2(+), G(–) 2N6346 thru 49
MT2(–), G(–) All Types
—
—
—
—
—
—
0.9
0.9
1.1
1.4
—
2
2.5
2
2.5
2.5
3
MT2(–), G(+) 2N6346 thru 49
*MT2(+), G(+); MT2(–), G(–) T = –40°C All Types
C
*MT2(+), G(–); MT2(–), G(+) T = –40°C 2N6346 thru 49
—
C
(V = Rated V
, R = 10 k Ohms, T = 100°C)
D
DRM
L J
*MT2(+), G(+); MT2(–), G(–) All Types
0.2
0.2
—
—
—
—
*MT2(+), G(–); MT2(–), G(–) 2N6346 thru 49
*Holding Current
I
mA
µs
H
(V = 12 Vdc, Gate Open)
T
= 25°C
—
—
6
—
40
75
D
C
(I = 200 mA)
T
*T = –40°C
C
*Turn-On Time
t
gt
—
1.5
2
(V = Rated V
, I
= 11 A, I = 120 mA,
GT
D
DRM TM
Rise Time = 0.1 µs, Pulse Width = 2 µs)
Critical Rate of Rise of Commutation Voltage
dv/dt(c)
—
5
—
V/µs
(V = Rated V
Gate Unenergized, T = 80°C)
, I = 11 A, Commutating di/dt = 4.0 A/ms,
D
DRM TM
C
*Indicates JEDEC Registered Data.
FIGURE 1 – RMS CURRENT DERATING
FIGURE 2 – ON-STATE POWER DISSIPATION
100
96
10
8.0
6.0
4.0
dc
α
= 180°
α
= 30°
α
60°
120°
α
90°
90°
120°
92
180°
60°
α
= CONDUCTION ANGLE
30°
T
100
°C
J
88
α
α
84
80
2.0
0
α
= CONDUCTION ANGLE
dc
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
, RMS ON-STATE CURRENT (AMP)
I
), RMS ON-STATE CURRENT (AMP)
T(RMS)
T(RMS
2
Motorola Thyristor Device Data
FIGURE 3 – TYPICAL GATE TRIGGER VOLTAGE
FIGURE 4 – TYPICAL GATE TRIGGER CURRENT
50
1.8
1.6
1.4
OFF-STATE VOLTAGE = 12 V
OFF-STATE VOLTAGE = 12 V
30
20
QUADRANT 4
1.2
1.0
0.8
1
2
QUADRANT
3
10
1
2
4
QUADRANTS
0.6
0.4
7.0
5.0
3
–60
–40
0
20
40
60
80
100
120 140
–60 –40 –20
0
20
40
60
80
100
120 140
–20
T , JUNCTION TEMPERATURE (
°
C)
T , JUNCTION TEMPERATURE (
°C)
J
J
FIGURE 5 – ON-STATE CHARACTERISTICS
FIGURE 6 – TYPICAL HOLDING CURRENT
100
70
20
10
GATE OPEN
MAIN TERMINAL #1
POSITIVE
50
30
20
7.0
5.0
MAIN TERMINAL #2
POSITIVE
T
= 100°C
J
25°C
3.0
2.0
10
7.0
5.0
–60
–40
–20
0
20
40
60
80
100
120
140
T , JUNCTION TEMPERATURE (
°
C)
J
3.0
2.0
FIGURE 7 – MAXIMUM NON-REPETITIVE SURGE CURRENT
100
1.0
0.7
0.5
80
60
CYCLE
40
0.3
0.2
T
= 100°C
J
20
0
f = 60 Hz
Surge is preceded and followed by rated current
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
1.0
2.0
3.0
5.0
7.0
10
v
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
NUMBER OF CYCLES
TM
3
Motorola Thyristor Device Data
FIGURE 8 – TYPICAL THERMAL RESPONSE
1.0
0.5
0.2
0.1
Z
•
R
θJC
θ
JC(t) = r(t)
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
t,TIME (ms)
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
PLANE
–T–
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.055
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.39
5.33
3.04
2.79
1.39
6.47
1.27
–––
4
3
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
Q
A
K
STYLE 4:
PIN 1. MAIN TERMINAL 1
1
2
U
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
H
Z
R
L
V
J
G
T
U
V
D
N
Z
0.080
2.04
CASE 221A-04
(TO–220AB)
5
Motorola Thyristor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
2N6342/D
◊
相关型号：
©2020 ICPDF网 联系我们和版权申明