2N6344A [MOTOROLA]
600V, 12A, TRIAC, TO-220AB, CASE 221A-07, 3 PIN;
| 型号： | 2N6344A |
| 厂家： | 
MOTOROLA |
| 描述： | 600V, 12A, TRIAC, TO-220AB, CASE 221A-07, 3 PIN 栅 三端双向交流开关 栅极 |
| 文件： | 总6页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by 2N6344/D
SEMICONDUCTOR TECHNICAL DATA
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full–wave silicon
gate controlled solid–state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
TRIACs
8 to 12 AMPERES RMS
600 thru 800 VOLTS
•
•
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
MT1
•
•
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Two Modes (2N6344, 2N6344A) or Four Modes
(2N6348A, 2N6349)
MT2
G
For 400 Hz Operation, Consult Factory
CASE 221A-07
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(1)
*Peak Repetitive Off–State Voltage
V
Volts
Amps
Amps
DRM
(Gate Open, T = –40 to +110°C)
J
1/2 Sine Wave 50 to 60 Hz, Gate Open
2N6344, 2N6344A, 2N6348
2N6349
600
800
*RMS On–State Current
Full Cycle Sine Wave 50 to 60 Hz
(T = +80°C) 2N6344, 2N6349
I
8
4
12
6
C
T(RMS)
(T = +90°C)
C
(T = +80°C) 2N6344A, 2N6348A
C
(T = +90°C)
C
*Peak Non-repetitive Surge Current
I
100
40
TSM
(One Full Cycle, 60 Hz, T = +80°C)
C
Preceded and followed by Rated Current
2
I t
2
A s
Circuit Fusing
(t = 8.3 ms)
*Peak Gate Power (T = +80°C, Pulse Width = 2 µs)
P
20
Watts
Watt
Amps
Volts
°C
C
GM
*Average Gate Power (T = +80°C, t = 8.3 ms)
P
0.5
2
C
G(AV)
*Peak Gate Current
I
GM
*Peak Gate Voltage
V
GM
10
*Operating Junction Temperature Range
*Storage Temperature Range
T
–40 to +125
–40 to +150
J
T
°C
stg
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Motorola, Inc. 1998
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
2.2
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C, and Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
*Peak Blocking Current
(V = Rated V
I
DRM
)
T = 25°C
T = 100°C
J
—
—
—
—
10
2
µA
mA
D
DRM, gate open
J
*Peak On–State Voltage
(I = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
V
—
1.3
1.55
Volts
mA
TM
TM
Gate Trigger Current (Continuous dc)
(V = 12 Vdc, R = 100 Ohms)
I
GT
D
L
(Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+) All Types
—
—
—
—
—
—
12
12
20
35
—
—
50
75
50
75
100
125
MT2(+), G(–) 2N6349
MT2(–), G(–) All Types
MT2(–), G(+) 2N6349
*MT2(+), G(+); MT2(–), G(–) T = –40°C All Types
C
*MT2(+), G(–); MT2(–), G(+) T = –40°C 2N6349
C
Gate Trigger Voltage (Continuous dc)
V
GT
Volts
(V = 12 Vdc, R = 100 Ohms)
D
L
(Minimum Gate Pulse Width = 2 µs)
MT2(+), G(+) All Types
—
—
—
—
—
—
0.9
0.9
1.1
1.4
—
2
2.5
2
2.5
2.5
3
MT2(+), G(–) 2N6349
MT2(–), G(–) All Types
MT2(–), G(+) 2N6349
*MT2(+), G(+); MT2(–), G(–) T = –40°C All Types
C
*MT2(+), G(–); MT2(–), G(+) T = –40°C 2N6349
—
C
(V = Rated V
, R = 10 k Ohms, T = 100°C)
D
DRM
L J
*MT2(+), G(+); MT2(–), G(–) All Types
*MT2(+), G(–); MT2(–), G(–) 2N6349
0.2
0.2
—
—
—
—
*Holding Current
I
mA
µs
H
(V = 12 Vdc, Gate Open)
T
= 25°C
—
—
6
—
40
75
D
C
C
(I = 200 mA)
T
*T = –40°C
* Turn-On Time
t
gt
—
1.5
2
(V = Rated V
Rise Time = 0.1 µs, Pulse Width = 2 µs)
, I
= 11 A, I
= 120 mA,
GT
D
DRM TM
Critical Rate of Rise of Commutation Voltage
dv/dt(c)
—
5
—
V/µs
(V = Rated V
Gate Unenergized, T = 80°C)
, I = 11 A, Commutating di/dt = 4.0 A/ms,
D
DRM TM
C
*Indicates JEDEC Registered Data.
FIGURE 1 – RMS CURRENT DERATING
FIGURE 2 – ON-STATE POWER DISSIPATION
100
96
10
dc
α
= 30°
α
α
= 180
°
60
°
8.0
120°
α
90
°
90
°
α
= CONDUCTION ANGLE
120°
6.0
4.0
2.0
92
60°
T
100°C
J
30
°
180
°
α
88
α
84
80
α
= CONDUCTION ANGLE
dc
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
, RMS ON-STATE CURRENT (AMP)
I
, RMS ON-STATE CURRENT, (AMP)
T(RMS)
T(RMS)
2
Motorola Thyristor Device Data
FIGURE 3 – TYPICAL GATE TRIGGER VOLTAGE
FIGURE 4 – TYPICAL GATE TRIGGER CURRENT
1.8
1.6
1.4
1.2
50
OFF-STATE VOLTAGE = 12 V
OFF-STATE VOLTAGE = 12 V
30
20
QUADRANT 4
1.0
0.8
1
10
1
2
QUADRANT
3
QUADRANTS
2
3
4
0.6
0.4
7.0
5.0
–60
–40
–20
0
20
40
60
80
100
120 140
–60 –40
–20
0
20
40
60
80
100
C)
120 140
T , JUNCTION TEMPERATURE (
°C)
T , JUNCTION TEMPERATURE (
°
J
J
FIGURE 5 – ON-STATE CHARACTERISTICS
FIGURE 6 – TYPICAL HOLDING CURRENT
100
70
20
10
GATE OPEN
MAIN TERMINAL #1
POSITIVE
50
30
20
7.0
5.0
MAIN TERMINAL #2
POSITIVE
T
= 100°C
J
25°C
3.0
2.0
10
7.0
5.0
–60 –40
–20
0
20
40
60
80
100
C)
120 140
T , JUNCTION TEMPERATURE (
°
J
3.0
2.0
FIGURE 7 – MAXIMUM NON-REPETITIVE SURGE CURRENT
100
1.0
0.7
0.5
80
60
CYCLE
= 100°C
0.3
0.2
40
T
J
20
0
f = 60 Hz
Surge is preceded and followed by rated current
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0 4.4
1.0
2.0
3.0
5.0
7.0
10
v
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
NUMBER OF CYCLES
TM
3
Motorola Thyristor Device Data
FIGURE 8 – TYPICAL THERMAL RESPONSE
1.0
0.5
0.2
0.1
Z
= r(t) • R
θJC
θ
JC(t)
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
t,TIME (ms)
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING
PLANE
–T–
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
4
3
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
STYLE 3:
PIN 1. CATHODE
Q
A
K
2. ANODE
3. GATE
4. ANODE
1
2
U
H
Z
R
L
V
J
T
U
V
G
D
Z
0.080
2.04
N
CASE 221A-07
(TO–220AB)
ISSUE Z
5
Motorola Thyristor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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