2N5401 [MOTOROLA]
Amplifier Transistor(PNP Silicon); 放大器晶体管( PNP硅)型号: | 2N5401 |
厂家: | MOTOROLA |
描述: | Amplifier Transistor(PNP Silicon) |
文件: | 总6页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by 2N5400/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol 2N5400 2N5401
Unit
Vdc
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
V
CEO
V
CBO
V
EBO
120
130
150
160
Vdc
5.0
Vdc
Collector Current — Continuous
I
C
600
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
2N5400
2N5401
120
150
—
—
C
B
Collector–Base Breakdown Voltage
(I = 100 Adc, I = 0)
V
Vdc
Vdc
(BR)CBO
2N5400
2N5401
130
160
—
—
C
E
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
5.0
—
(BR)EBO
E
C
Collector Cutoff Current
I
CBO
(V
CB
(V
CB
(V
CB
(V
CB
= 100 Vdc, I = 0)
2N5400
2N5401
2N5400
2N5401
—
—
—
—
100
50
100
50
nAdc
E
= 120 Vdc, I = 0)
E
= 100 Vdc, I = 0, T = 100°C)
µAdc
E
A
A
= 120 Vdc, I = 0, T = 100°C)
E
Emitter Cutoff Current
(V = 3.0 Vdc, I = 0)
I
—
50
nAdc
EBO
EB
C
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
(1)
ON CHARACTERISTICS
DC Current Gain
(I = 1.0 mAdc, V
C
h
FE
—
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
2N5400
2N5401
30
50
—
—
CE
CE
CE
(I = 10 mAdc, V
C
2N5400
2N5401
40
60
180
240
(I = 50 mAdc, V
C
2N5400
2N5401
40
50
—
—
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
V
Vdc
Vdc
CE(sat)
—
—
0.2
0.5
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
BE(sat)
—
—
1.0
1.0
C
C
B
B
(I = 50 mAdc, I = 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 10 mAdc, V
= 10 Vdc, f = 100 MHz)
2N5400
2N5401
100
100
400
300
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
—
6.0
pF
—
obo
CB
E
Small–Signal Current Gain
h
fe
(I = 1.0 mAdc, V
C
= 10 Vdc, f = 1.0 kHz)
2N5400
2N5401
30
40
200
200
CE
Noise Figure
NF
—
8.0
dB
(I = 250 µAdc, V
= 5.0 Vdc, R = 1.0 kΩ, f = 1.0 kHz)
S
C
CE
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
150
T
= 125°C
J
100
25°C
70
50
–55°C
V
V
= –1.0 V
= –5.0 V
CE
CE
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
I
, COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
= 1.0 mA
10 mA
30 mA
100 mA
C
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
, BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
3
2
10
V
= 30 V
CE
10
I
= I
CES
C
1
0
10
T
= 125°C
J
10
75°C
–1
–2
10
REVERSE
FORWARD
10
25°C
–3
10
0.3
0.2
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
, BASE–EMITTER VOLTAGE (VOLTS)
BE
Figure 3. Collector Cut–Off Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
1.0
0.9
2.5
2.0
T
= 25°C
T
= –55°C to 135°C
J
J
0.8
0.7
0.6
1.5
1.0
0.5
V
@ I /I = 10
C B
BE(sat)
θ
θ
for V
VC
VB
CE(sat)
0
–0.5
–1.0
–1.5
0.5
0.4
0.3
0.2
0.1
0
V
@ I /I = 10
C B
CE(sat)
for V
BE(sat)
1.0
–2.0
–2.5
0.1
0.2
1.0
2.0 3.0 5.0
0.1
0.2
2.0 3.0 5.0
0.3 0.5
10
20 30 50
100
0.3 0.5
10
20 30 50
100
I
, COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
100
70
T
= 25°C
J
50
V
V
BB
+8.8 V
CC
–30 V
30
20
10.2 V
C
ibo
100
3.0 k
R
C
V
in
10
7.0
5.0
V
out
0.25
µF
10
µs
R
B
INPUT PULSE
C
obo
5.1 k
100
3.0
2.0
t , t
≤
10 ns
V
in
1N914
r
f
DUTY CYCLE = 1.0%
1.0
0.2
Values Shown are for I @ 10 mA
1.0
2.0 3.0
5.0 7.0
0.3
0.5 0.7
10
20
C
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000
700
500
2000
1000
I
T
/I = 10
C B
t @ V
CC
= 120 V
r
= 25°C
J
I
T
/I = 10
C B
t @ V
CC
= 120 V
f
700
500
= 25°C
J
300
200
t @ V
CC
= 30 V
r
t @ V
CC
= 30 V
f
300
200
100
70
t
@ V = 120 V
CC
s
100
70
50
30
20
50
t
V
@ V = 1.0 V
BE(off)
CC
d
= 120 V
30
20
0.2
10
0.2
1.0
2.0 3.0 5.0
, COLLECTOR CURRENT (mA)
1.0
2.0 3.0 5.0
I , COLLECTOR CURRENT (mA)
C
0.3 0.5
10
20 30 50
100
200
0.3 0.5
10
20 30 50
100
200
I
C
Figure 8. Turn–On Time
Figure 9. Turn–Off Time
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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2N5400/D
◊
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