2N5401 [MOTOROLA]

Amplifier Transistor(PNP Silicon); 放大器晶体管( PNP硅)
2N5401
型号: 2N5401
厂家: MOTOROLA    MOTOROLA
描述:

Amplifier Transistor(PNP Silicon)
放大器晶体管( PNP硅)

晶体 放大器 晶体管
文件: 总6页 (文件大小:180K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Order this document  
by 2N5400/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
*Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
2
3
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol 2N5400 2N5401  
Unit  
Vdc  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
120  
130  
150  
160  
Vdc  
5.0  
Vdc  
Collector Current — Continuous  
I
C
600  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
2N5400  
2N5401  
120  
150  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
Vdc  
Vdc  
(BR)CBO  
2N5400  
2N5401  
130  
160  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
5.0  
(BR)EBO  
E
C
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
(V  
CB  
(V  
CB  
= 100 Vdc, I = 0)  
2N5400  
2N5401  
2N5400  
2N5401  
100  
50  
100  
50  
nAdc  
E
= 120 Vdc, I = 0)  
E
= 100 Vdc, I = 0, T = 100°C)  
µAdc  
E
A
A
= 120 Vdc, I = 0, T = 100°C)  
E
Emitter Cutoff Current  
(V = 3.0 Vdc, I = 0)  
I
50  
nAdc  
EBO  
EB  
C
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
(1)  
ON CHARACTERISTICS  
DC Current Gain  
(I = 1.0 mAdc, V  
C
h
FE  
= 5.0 Vdc)  
= 5.0 Vdc)  
= 5.0 Vdc)  
2N5400  
2N5401  
30  
50  
CE  
CE  
CE  
(I = 10 mAdc, V  
C
2N5400  
2N5401  
40  
60  
180  
240  
(I = 50 mAdc, V  
C
2N5400  
2N5401  
40  
50  
CollectorEmitter Saturation Voltage  
(I = 10 mAdc, I = 1.0 mAdc)  
V
V
Vdc  
Vdc  
CE(sat)  
0.2  
0.5  
C
B
(I = 50 mAdc, I = 5.0 mAdc)  
C
B
BaseEmitter Saturation Voltage  
(I = 10 mAdc, I = 1.0 mAdc)  
BE(sat)  
1.0  
1.0  
C
C
B
B
(I = 50 mAdc, I = 5.0 mAdc)  
SMALLSIGNAL CHARACTERISTICS  
CurrentGain — Bandwidth Product  
f
T
MHz  
(I = 10 mAdc, V  
= 10 Vdc, f = 100 MHz)  
2N5400  
2N5401  
100  
100  
400  
300  
C
CE  
Output Capacitance  
(V = 10 Vdc, I = 0, f = 1.0 MHz)  
C
6.0  
pF  
obo  
CB  
E
Small–Signal Current Gain  
h
fe  
(I = 1.0 mAdc, V  
C
= 10 Vdc, f = 1.0 kHz)  
2N5400  
2N5401  
30  
40  
200  
200  
CE  
Noise Figure  
NF  
8.0  
dB  
(I = 250 µAdc, V  
= 5.0 Vdc, R = 1.0 k, f = 1.0 kHz)  
S
C
CE  
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.  
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
200  
150  
T
= 125°C  
J
100  
25°C  
70  
50  
55°C  
V
V
= 1.0 V  
= 5.0 V  
CE  
CE  
30  
20  
0.1  
0.2  
0.3  
0.5  
1.0  
2.0  
3.0  
5.0  
10  
20  
30  
50  
100  
I
, COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
I
= 1.0 mA  
10 mA  
30 mA  
100 mA  
C
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
I
, BASE CURRENT (mA)  
B
Figure 2. Collector Saturation Region  
3
2
10  
V
= 30 V  
CE  
10  
I
= I  
CES  
C
1
0
10  
T
= 125°C  
J
10  
75°C  
–1  
–2  
10  
REVERSE  
FORWARD  
10  
25°C  
–3  
10  
0.3  
0.2  
0.1  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
V
, BASE–EMITTER VOLTAGE (VOLTS)  
BE  
Figure 3. Collector Cut–Off Region  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
3
1.0  
0.9  
2.5  
2.0  
T
= 25°C  
T
= 55°C to 135°C  
J
J
0.8  
0.7  
0.6  
1.5  
1.0  
0.5  
V
@ I /I = 10  
C B  
BE(sat)  
θ
θ
for V  
VC  
VB  
CE(sat)  
0
–0.5  
–1.0  
–1.5  
0.5  
0.4  
0.3  
0.2  
0.1  
0
V
@ I /I = 10  
C B  
CE(sat)  
for V  
BE(sat)  
1.0  
–2.0  
–2.5  
0.1  
0.2  
1.0  
2.0 3.0 5.0  
0.1  
0.2  
2.0 3.0 5.0  
0.3 0.5  
10  
20 30 50  
100  
0.3 0.5  
10  
20 30 50  
100  
I
, COLLECTOR CURRENT (mA)  
I , COLLECTOR CURRENT (mA)  
C
C
Figure 4. “On” Voltages  
Figure 5. Temperature Coefficients  
100  
70  
T
= 25°C  
J
50  
V
V
BB  
+8.8 V  
CC  
–30 V  
30  
20  
10.2 V  
C
ibo  
100  
3.0 k  
R
C
V
in  
10  
7.0  
5.0  
V
out  
0.25  
µF  
10  
µs  
R
B
INPUT PULSE  
C
obo  
5.1 k  
100  
3.0  
2.0  
t , t  
10 ns  
V
in  
1N914  
r
f
DUTY CYCLE = 1.0%  
1.0  
0.2  
Values Shown are for I @ 10 mA  
1.0  
2.0 3.0  
5.0 7.0  
0.3  
0.5 0.7  
10  
20  
C
V
, REVERSE VOLTAGE (VOLTS)  
R
Figure 6. Switching Time Test Circuit  
Figure 7. Capacitances  
1000  
700  
500  
2000  
1000  
I
T
/I = 10  
C B  
t @ V  
CC  
= 120 V  
r
= 25°C  
J
I
T
/I = 10  
C B  
t @ V  
CC  
= 120 V  
f
700  
500  
= 25°C  
J
300  
200  
t @ V  
CC  
= 30 V  
r
t @ V  
CC  
= 30 V  
f
300  
200  
100  
70  
t
@ V = 120 V  
CC  
s
100  
70  
50  
30  
20  
50  
t
V
@ V = 1.0 V  
BE(off)  
CC  
d
= 120 V  
30  
20  
0.2  
10  
0.2  
1.0  
2.0 3.0 5.0  
, COLLECTOR CURRENT (mA)  
1.0  
2.0 3.0 5.0  
I , COLLECTOR CURRENT (mA)  
C
0.3 0.5  
10  
20 30 50  
100  
200  
0.3 0.5  
10  
20 30 50  
100  
200  
I
C
Figure 8. Turn–On Time  
Figure 9. Turn–Off Time  
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
PACKAGE DIMENSIONS  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. DIMENSION F APPLIES BETWEEN P AND L.  
DIMENSION D AND J APPLY BETWEEN L AND K  
MINIMUM. LEAD DIMENSION IS UNCONTROLLED  
IN P AND BEYOND DIMENSION K MINIMUM.  
R
P
L
F
SEATING  
PLANE  
INCHES  
MIN  
MILLIMETERS  
K
DIM  
A
B
C
D
F
G
H
J
K
L
N
P
MAX  
0.205  
0.210  
0.165  
0.022  
0.019  
0.055  
0.105  
0.020  
–––  
MIN  
4.45  
4.32  
3.18  
0.41  
0.41  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
–––  
MAX  
5.20  
5.33  
4.19  
0.55  
0.48  
1.39  
2.66  
0.50  
–––  
0.175  
0.170  
0.125  
0.016  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
–––  
D
J
X X  
G
H
V
SECTION X–X  
C
–––  
–––  
0.105  
0.100  
–––  
2.66  
2.54  
–––  
1
N
R
V
0.115  
0.135  
2.93  
3.43  
N
–––  
–––  
STYLE 1:  
PIN 1. EMITTER  
CASE 029–04  
(TO–226AA)  
ISSUE AD  
2. BASE  
3. COLLECTOR  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
5
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA/EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
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2N5400/D  

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