1N5819 [MOTOROLA]
SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS; 肖特基二极管1安培20 ， 30和40伏
| 型号： | 1N5819 |
| 厂家： | 
MOTOROLA |
| 描述： | SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS |
| 文件： | 总6页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by 1N5817/D
SEMICONDUCTOR TECHNICAL DATA
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
1N5817 and 1N5819 are
Motorola Preferred Devices
•
•
•
Extremely Low v
F
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
SCHOTTKY BARRIER
RECTIFIERS
Mechanical Characteristics
1 AMPERE
20, 30 and 40 VOLTS
•
•
•
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
•
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
•
•
Shipped in plastic bags, 1000 per bag.
Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the
part number
•
•
Polarity: Cathode Indicated by Polarity Band
Marking: 1N5817, 1N5818, 1N5819
CASE 59–04
MAXIMUM RATINGS
Rating
Symbol
1N5817 1N5818 1N5819
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
20
30
40
V
RRM
RWM
R
V
Non–Repetitive Peak Reverse Voltage
RMS Reverse Voltage
V
24
14
36
21
48
28
V
V
A
RSM
V
R(RMS)
Average Rectified Forward Current (2)
I
O
1.0
(V
R(equiv)
θJA
≤ 0.2 V (dc), T = 90°C,
R L
R
= 80°C/W, P.C. Board Mounting, see Note 2, T = 55°C)
A
Ambient Temperature (Rated V (dc), P
R
= 0, R
= 80°C/W)
T
A
85
80
75
°C
F(AV)
θJA
Non–Repetitive Peak Surge Current
I
25 (for one cycle)
A
FSM
(Surge applied at rated load conditions, half–wave, single phase 60 Hz,
= 70°C)
T
L
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
THERMAL CHARACTERISTICS (2)
T , T
stg
–65 to +125
150
°C
°C
J
T
J(pk)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
80
°C/W
θJA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (2)
L
Characteristic
Symbol
1N5817 1N5818 1N5819
Unit
Maximum Instantaneous Forward Voltage (1)
(i = 0.1 A)
v
0.32
0.45
0.75
0.33
0.55
0.875
0.34
0.6
0.9
V
F
F
(i = 1.0 A)
F
(i = 3.0 A)
F
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
(T = 25°C)
(T = 100°C)
L
I
R
1.0
10
1.0
10
1.0
10
mA
L
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 3
Motorola, Inc. 1996
125
115
NOTE 1 — DETERMINING MAXIMUM RATINGS
40 30 23
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
°
above 0.1 V
equation (1).
. Proper derating may be accomplished by use of
RWM
105
95
T
=
=
=
(1)
T
– R
P
– R P
θJA R(AV)
A(max)
J(max)
θJA F(AV)
where T
A(max)
Maximum allowable ambient temperature
Maximum allowable junction temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
Average forward power dissipation
R
(°C/W) = 110
JA
θ
T
J(max)
80
60
P
P
=
=
=
F(AV)
85
75
Average reverse power dissipation
Junction–to–ambient thermal resistance
R(AV)
R
θJA
Figures 1, 2, and 3 permit easier use of equation (1) by taking re-
verse power dissipation and thermal runaway into consideration. The
figures solve for a reference temperature as determined by equation
(2).
3.0
4.0
5.0
7.0
10
15
20
2.0
V
, DC REVERSE VOLTAGE (VOLTS)
R
Figure 1. Maximum Reference Temperature
1N5817
T
R
= T
– R P
J(max)
Substituting equation (2) into equation (1) yields:
= T – R P
θJA F(AV)
Inspection of equations (2) and (3) reveals that T is the ambient
temperature at which thermal runaway occurs or where T = 125°C,
when forward power is zero. The transition from one boundary condi-
tion to the other is evident on the curves of Figures 1, 2, and 3 as a
differenceintherateofchangeoftheslopeinthevicinityof115°C. The
dataofFigures1, 2, and3isbasedupondcconditions. Foruseincom-
mon rectifier circuits, Table 1 indicates suggested factors for an equiv-
alent dc voltage to use for conservative design, that is:
θJA R(AV)
(2)
125
115
T
A(max)
R
(3)
R
40
23
30
J
°
105
95
R
(°
C/W) = 110
80
θ
JA
60
(4)
V
= V x F
in(PK)
R(equiv)
ThefactorFisderivedbyconsideringthepropertiesofthevariousrec-
tifier circuits and the reverse characteristics of Schottky diodes.
85
EXAMPLE:FindT
A(max)
for1N5818operatedina12–voltdcsupply
usingabridgecircuitwithcapacitivefiltersuchthatI
=0.4A(I
=
75
DC
F(AV)
= 80°C/W.
3.0
4.0
5.0
7.0
10
15
20
30
0.5 A), I
/I
= 10, Input Voltage = 10 V
, R
(FM) (AV)
(rms) θJA
V
, DC REVERSE VOLTAGE (VOLTS)
R
Step 1. Find V
Step 1. Find
. Read F = 0.65 from Table 1,
R(equiv)
Figure 2. Maximum Reference Temperature
1N5818
V
= (1.41)(10)(0.65) = 9.2 V.
R(equiv)
Step 2. Find T from Figure 2. Read T = 109°C
R
R
Step 1. Find @ V = 9.2 V and R
= 80°C/W.
R
F(AV)
θJA
from Figure 4. **Read P
Step 3. Find P
= 0.5 W
F(AV)
125
115
40
I
(FM)
30
23
@
= 10 and I
= 0.5 A.
F(AV)
I
°
(AV)
Step 4. Find T
Step 4. Find T
from equation (3).
= 109 – (80) (0.5) = 69°C.
A(max)
A(max)
105
95
R
(°C/W) = 110
θ
JA
**Values given are for the 1N5818. Power is slightly lower for the
1N5817 because of its lower forward voltage, and higher for the
1N5819.
80
60
85
75
4.0
5.0
7.0
10
15
20
30
40
V
, DC REVERSE VOLTAGE (VOLTS)
R
Figure 3. Maximum Reference Temperature
1N5819
Table 1. Values for Factor F
Full Wave, Bridge
Half Wave
Circuit
Full Wave, Center Tapped*†
Load
Resistive
Capacitive*
Resistive
Capacitive
Resistive
1.0
Capacitive
Sine Wave
Square Wave
0.5
1.3
0.5
0.65
0.75
1.3
1.5
0.75
1.5
0.75
1.5
*Note that V
≈ 2.0 V .
in(PK)
†Use line to center tap voltage for V
.
R(PK)
in
2
Rectifier Device Data
90
80
70
5.0
Sine Wave
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
=
π
(Resistive Load)
I
3.0
2.0
(FM)
I
(AV)
5
Capacitive
Loads
10
20
1.0
0.7
0.5
{
dc
60
50
40
MAXIMUM
SQUARE WAVE
TYPICAL
0.3
0.2
T
≈ 125°C
J
30
20
10
0.1
0.07
0.05
1
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1.0
0.2
0.4
0.6
0.8 1.0
2.0
4.0
L, LEAD LENGTH (INCHES)
I
, AVERAGE FORWARD CURRENT (AMP)
F(AV)
Figure 4. Steady–State Thermal Resistance
Figure 5. Forward Power Dissipation
1N5817–19
1.0
0.7
0.5
0.3
0.2
Z
p
= Z
• r(t)
JL
θ
JL(t)
θ
P
P
pk
pk
DUTY CYCLE, D = t /t
p
1
0.1
t
PEAK POWER, P , is peak of an
pk
equivalent square power pulse.
TIME
0.07
0.05
t
R 1
∆
where
∆
T
= P
•
[D + (1 – D)
•
r(t + t ) + r(t ) – r(t )]
JL
pk
θ
JL
1
p
p
1
0.03
0.02
T
= the increase in junction temperature above the lead temperature
JL
r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.:
r(t) = r(t + t ) = normalized value of transient thermal resistance at time, t + t
.
1
p
1
p
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
500
1.0k
2.0k
5.0k
10k
Figure 6. Thermal Response
Mounting Method 3
Mounting Method 1
NOTE 2 — MOUNTING DATA
Data shown for thermal resistance junction–to–ambient (R
the mountings shown is to be used as typical guideline values for pre-
liminary engineering, or in case the tie point temperature cannot be
measured.
P.C. Board with
1–1/2″ x 1–1/2″
copper surface.
P.C. Board with
1–1/2″ x 1–1/2″
copper surface.
) for
θJA
L = 3/8
″
L
L
TYPICAL VALUES FOR R
IN STILL AIR
θJA
Lead Length, L (in)
Mounting
Method
R
θJA
1/8
1/4
1/2
3/4
1
2
3
52
67
65
80
72
87
85
°C/W
°C/W
°C/W
BOARD GROUND
PLANE
100
Mounting Method 2
50
L
L
VECTOR PIN MOUNTING
Rectifier Device Data
3
NOTE 3 — THERMAL CIRCUIT MODEL
(For heat conduction through the leads)
R
R
R
R
R
R
θS(K)
θ
S(A)
θ
L(A)
T
θ
J(A)
θ
J(K)
θ
L(K)
T
T
A(K)
A(A)
P
D
T
T
L(K)
T
T
L(A)
C(A)
J
C(K)
Use of the above model permits junction to lead thermal resistance
for any mounting configuration to be found. For a given total lead
length, lowest values occur when one side of the rectifier is brought
as close as possible to the heatsink. Terms in the model signify:
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
R
= 100°C/W/in typically and 120°C/W/in maximum
= 36°C/W typically and 46°C/W maximum.
θL
R
θJ
T
= Ambient Temperature
= Lead Temperature
T = Case Temperature
C
A
T
T = Junction Temperature
J
L
R
R
R
= Thermal Resistance, Heatsink to Ambient
= Thermal Resistance, Lead to Heatsink
= Thermal Resistance, Junction to Case
θS
θL
θJ
P
= Power Dissipation
D
125
115
1 Cycle
20
T
= 70°C
L
f = 60 Hz
10
105
95
7.0
T
= 100°C
C
5.0
85
3.0
2.0
Surge Applied at
Rated Load Conditions
25°C
75
1.0
2.0
3.0
5.0 7.0 10
20
30
40 70 100
NUMBER OF CYCLES
1.0
0.7
0.5
Figure 8. Maximum Non–Repetitive Surge Current
30
20
T
= 125°C
J
0.3
0.2
15
100°C
5.0
3.0
2.0
0.1
75°C
1.0
0.5
0.07
0.05
25°C
0.3
0.2
0.03
0.02
0.1
1N5817
1N5818
1N5819
0.05
0.03
0.1
0.2 0.3 0.4 0.5
0.6
0.7 0.8 0.9 1.0 1.1
0
4.0
8.0
12
16
20
24
28
32
36
40
v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 7. Typical Forward Voltage
Figure 9. Typical Reverse Current
4
Rectifier Device Data
NOTE 4 — HIGH FREQUENCY OPERATION
200
100
Since current flow in a Schottky rectifier is the result of majority carri-
er conduction, it is not subject to junction diode forward and reverse re-
covery transients due to minority carrier injection and stored charge.
Satisfactory circuit analysis work may be performed by using a model
consistingofanidealdiodeinparallelwithavariablecapacitance. (See
Figure 10.)
Rectification efficiency measurements show that operation will be
satisfactory up to several megahertz. For example, relative waveform
rectificationefficiency is approximately 70 percent at 2.0 MHz, e.g., the
ratio of dc power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine wave inputs.
However, in contrast to ordinary junction diodes, the loss in waveform
efficiency is not indicative of power loss: it is simply a result of reverse
current flow through the diode capacitance, which lowers the dc output
voltage.
1N5817
1N5818
1N5819
70
50
30
20
T
= 25°C
J
f = 1.0 MHz
10
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 10. Typical Capacitance
Rectifier Device Data
5
PACKAGE DIMENSIONS
B
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO–41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
D
K
MILLIMETERS
INCHES
A
DIM
A
B
D
K
MIN
5.97
2.79
0.76
27.94
MAX
6.60
3.05
0.86
–––
MIN
MAX
0.260
0.120
0.034
–––
0.235
0.110
0.030
1.100
K
CASE 59–04
ISSUE M
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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1N5817/D
◊
相关型号：
1N5819-13
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
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1N5819-B
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PALSTIC PACKAGE-2
RECTRON
1N5819-BP
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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