MBR10200CT [MOSPEC]
Schottky Barrier Rectifiers; 肖特基势垒整流器器
| 型号： | MBR10200CT |
| 厂家： | 
MOSPEC SEMICONDUCTOR |
| 描述： | Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSPEC
MBR10200CT
Schottky Barrier Rectifiers
SCHOTTKY BARRIER
RECTIFIERS
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal.
The proprietary barrier technology allows for
reliable operation up to 175℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
10 AMPERES
200 VOLTS
＊Low Forward Voltage.
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊175℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
＊ESD: 4KV(Min.) Human-Body Model
TO-220AB
＊In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Symbol
MBR10200CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
140
V
MILLIMETERS
DIM
MIN
MAX
RMS Reverse Voltage
VR(RMS)
V
A
A
B
C
D
E
F
G
H
I
9.78
5.02
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
15.32
10.42
6.52
14.62
4.07
2.66
1.36
0.96
4.98
1.38
2.98
0.55
2.98
3.90
Average Rectifier Forward Current
5.0
10
IF(AV)
Total Device (Rated VR),TC=125℃
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
10
A
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
IFSM
125
A
℃
Operating and Storage Junction Temperature Range
TJ , TSTG
-65 to +175
J
K
L
THERMAL RESISTANCES
M
O
℃/w
Typical Thermal Resistance junction to case
Rθjc
4.2
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
MBR10200CT
Unit
Maximum Instantaneous Forward Voltage
( IF =5.0 Amp TC = 25℃)
( I=5.0 Amp T= 125℃
Common cathode
Suffix “C”
VF
0.95
0.85
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
IR
0.01
10
mA
MBR10200CT
FIG-1 FORWARD CURRENT DERATING CURVE
FIG-2 TYPICAL FORWARD CHARACTERISITICS
CASE TEMPERATURE (℃)
FORWARD VOLTAGE (Volts)
FIG-3 TYPICAL REVERSE CHARACTERISTICS
FIG-4 TYPICAL JUNCTION CAPACITANCE
TJ=125oC
TJ=75oC
TJ=25oC
PERCENT OF RATED REVERSE VOLTAGE (
)
REVERSE VOLTAGE (Volts)
FIG-5 PEAK FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
相关型号：
MBR10200CT-BP
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
MBR10200CT-LJ
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB,
DIODES
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