V62C1802048L-150V [MOSEL]

Ultra Low Power 256K x 8 CMOS SRAM; 超低功耗256K ×8 CMOS SRAM
V62C1802048L-150V
型号: V62C1802048L-150V
厂家: MOSEL VITELIC, CORP    MOSEL VITELIC, CORP
描述:

Ultra Low Power 256K x 8 CMOS SRAM
超低功耗256K ×8 CMOS SRAM

内存集成电路 静态存储器 光电二极管
文件: 总9页 (文件大小:84K)
中文:  中文翻译
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V62C1802048L(L)  
Ultra Low Power  
256K x 8 CMOS SRAM  
Features  
• Low-power consumption  
Functional Description  
The V62C1802048L is a low power CMOS Static RAM orga-  
nized as 262,144 words by 8 bits. Easy memory expansion is p-  
rovided by an active LOW CE1 , an active HIGH CE2, an act-  
- Active: 25mA at 70ns  
- Stand-by: 10 mA (CMOS input/output)  
2 mA CMOS input/output, L version  
, and Tri-state I/O’s. This device has an auto-  
ive LOW OE  
matic power-down mode feature when deselected.  
• Single + 1.8 to 2.2V Power Supply  
• Equal access and cycle time  
• 70/85/100/150 ns access time  
Writing to the device is accomplished by taking Chip E-  
nable 1 (CE1  
) LOW, and Chip En-  
) with Write Enable (WE  
able 2 (CE2) HIGH. Reading from the device is performed  
by taking Chip Enable 1 (CE1  
) with Output Enable  
(OE ) LOW while Write Enable (WE ) and Chip Enable 2  
(CE2) is HIGH. The I/O pins are placed in a high-imped-  
ance state when the device is deselected: the outputs are  
disabled during a write cycle.  
• Easy memory expansion with CE1, CE2  
and OE inputs  
• 1.0V data retention mode  
The V62C1802048LL comes with a 1V data retention feature  
and Lower Standby Power. The V62C1802048L is available in  
a 32-pin 8 x 13.4 & 8 x 20 mm TSOP1 / STSOP packages.  
• TTL compatible, Tri-state input/output  
• Automatic power-down when deselected  
• Package available: 32-TSOP1 / STSOP  
Logic Block Diagram  
32-Pin TSOP1 / STSOP  
A
11  
OE  
10  
CE1  
I/O  
I/O  
I/O  
I/O  
I/O  
GND  
I/O  
I/O  
I/O  
1
2
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A
9
A
A
8
3
A
13  
8
4
INPUT BUFFER  
WE  
CE  
15  
7
5
A0  
2
6
6
A
A
1
2
A
5
7
Vcc  
A17  
4
8
I/O8  
I/O1  
A
A
3
4
9
A
16  
14  
12  
3
10  
11  
12  
13  
14  
15  
16  
A
2
A
A
5
6
Cell Array  
A
1
A
7
6
5
4
A0  
A
A
1
A
2
A3  
A
A
7
8
A
A
A9  
OE  
COLUMN DECODER  
WE  
CE1  
CE2  
CONTROL  
CIRCUIT  
A
10  
A
11  
A12  
A13  
A14  
A15  
A16  
A17  
1
REV. 1.2 May 2001 V62C1802048L(L)  
V62C1802048L(L)  
Absolute Maximum Ratings *  
Parameter  
Symbol Minimum Maximum  
Unit  
Voltage on Any Pin Relative to Gnd  
Power Dissipation  
Vt  
-0.5  
4.6  
1.0  
V
P
-
W
T
0
Storage Temperature (Plastic)  
Temperature Under Bias  
Tstg  
-55  
-40  
+150  
+85  
C
0
Tbias  
C
* Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rat-  
ing only and functional operation of the device at these or any conditions outside those indicated in the operational sections of this specifica-  
tion is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
Truth Table  
CE1  
CE2  
WE  
OE  
X
Data  
High-Z  
High-Z  
Data Out  
High-Z  
Data In  
Mode  
H
X
L
L
L
X
L
X
X
H
H
L
Standby  
X
Standby  
H
H
H
L
Active, Read  
H
Active, Output Disable  
Active, Write  
X
* Key: X = Don’t Care, L = Low, H = High  
Recommended Operating Conditions (TA = 00C to +700C / -400C to 850C**)  
Parameter  
Symbol  
Min  
1.8  
Typ  
Max  
2.2  
Unit  
V
2.0  
0.0  
-
V
V
V
V
CC  
Supply Voltage  
Gnd  
0.0  
0.0  
V
1.6  
V
+ 0.2  
CC  
IH  
Input Voltage  
V
-0.5*  
-
0.4  
IL  
* VIL min = -1.0V for pulse width less than tRC/2.  
** For Industrial Temperature.  
2
REV. 1.2 May 2001 V62C1802048L(L)  
V62C1802048L(L)  
DC Operating Characteristics (Vcc = 1.8 to 2.2V, Gnd = 0V, TA = 00C to +700C / -400C to 850C)  
-70  
-85  
-100  
-150  
Parameter  
Sym Test Conditions  
Unit  
Min Max Min Max Min Max Min Max  
Vcc = Max,  
Vin = Gnd to Vcc  
-
-
-
1
1
3
-
-
-
1
1
3
-
-
-
1
1
3
-
-
-
1
1
3
mA  
Input Leakage Current  
II I  
LI  
CE1 = VIH or CE2 = VIL  
Vcc= Max, VOUT = Gnd to Vcc  
mA  
Output Leakage  
Current  
IILOI  
CE1 = VIL , CE2 = VIH  
VIN=VIHorVIL,IOUT=0mA  
mA  
Operating Power  
Supply Current  
ICC  
CE1 = VIL , CE2 = VIH  
IOUT = 0mA,  
Min Cycle, 100% Duty  
-
-
20  
3
-
-
20  
3
-
-
15  
3
-
-
15  
3
mA  
mA  
ICC1  
Average Operating  
Current  
CE1 = 0.2V ,  
CE2 =Vcc - 0.2V  
ICC2  
I
OUT = 0mA,  
Cycle Time=1ms, 100% Duty  
CE1 = VIH or CE2 = VIL  
-
-
0.3  
10  
-
-
0.3  
10  
-
-
0.3  
10  
-
-
0.3  
10  
mA  
Standby Power Supply ISB  
Current (TTL Level)  
CE1 > Vcc - 0.2V or  
CE2 < 0.2V, f = 0  
VIN < 0.2V or  
mA  
Standby Power Supply ISB1  
Current (CMOS Level)  
-
-
2
0.4  
-
-
-
2
0.4  
-
-
-
2
0.4  
-
-
-
2
0.4  
-
mA  
V
V
IN > Vcc- 0.2V  
L
IOL = 2 mA  
IOH = -1 mA  
Output Low Voltage  
Output High Voltage  
VOL  
VOH  
1.6  
1.6  
1.6  
1.6  
V
Capacitance (f = 1MHz, TA = 250C)  
Parameter*  
Symbol  
Cin  
Test Condition  
Max  
7
Unit  
pF  
Input Capacitance  
V
= 0V  
in  
I/O Capacitance  
CI/O  
V
= V = 0V  
8
pF  
in  
out  
* This parameter is guaranteed by device characterization and is not production tested.  
AC Test Conditions  
Input Pulse Level  
Input Rise and Fall Time  
Input and Output Timing  
Reference Level  
0.4V to 1.6V  
5ns  
TTL  
CL  
*
50% of input level  
(VIL+VIH)/2  
Output Load Condition  
70ns/85 ns CL = 30pf + 1TTL Load  
Load 100ns/150 ns CL = 100pf + 1TTL Load  
Figure A.  
* Including Scope and Jig Capacitance  
3
REV. 1.2 May 2001 V62C1802048L(L)  
V62C1802048L(L)  
Read Cycle (3,9) (Vcc = 1.8 to2.2V, Gnd = 0V, TA = 00C to +700C / -400C to +850C)  
Note  
Unit  
Parameter  
Symbol  
-70  
-85  
-100  
-150  
Min Max Min Max Min Max Min Max  
tRC  
tAA  
tACE  
tOE  
70  
-
-
85  
-
-
100  
-
100  
100  
50  
-
150  
-
150  
150  
70  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read Cycle Time  
70  
70  
40  
-
85  
85  
40  
-
-
-
-
-
Address Access Time  
-
-
Chip Enable Access Time  
Output Enable Access Time  
OutputHold fromAddress Change  
Chip Enable to Output in Low-Z  
Chip Disable to Output in High-Z  
Output Enable to Output in Low-Z  
OutputDisable toOutput in High-Z  
Power-Up Time  
-
-
-
-
tOH  
10  
10  
-
10  
10  
-
10  
10  
-
10  
10  
-
tCLZ  
tCHZ  
tOLZ  
tOHZ  
tPU  
-
-
-
-
4,5  
4,5  
4,5  
4,5  
5
30  
-
35  
-
40  
-
50  
-
5
-
5
-
5
-
5
-
25  
-
30  
-
35  
-
40  
-
0
-
0
-
0
-
0
-
tPD  
70  
85  
100  
150  
5
Power-Down Time  
Write Cycle (3,11) (Vcc = 1.8 to 2.2V, Gnd = 0V, TA = 00C to +700C / -400C to +850C)  
Note  
-70  
-85  
-100  
-150  
Unit  
Parameter  
Symbol  
Min Max Min Max Min Max Min Max  
tWC  
tCW  
tAW  
tAS  
70  
60  
60  
0
-
-
85  
70  
70  
0
-
-
100  
80  
80  
0
-
-
150  
120  
120  
0
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write Cycle Time  
Chip Enable to Write End  
Address Setup to Write End  
Address Setup Time  
-
-
-
-
-
-
-
-
tWP  
tWR  
tDW  
tDH  
tWZ  
tOW  
50  
0
-
60  
0
-
70  
0
-
100  
0
-
Write Pulse Width  
-
-
-
-
Write Recovering Time  
Data Valid to Write End  
Data Hold Time  
30  
0
-
35  
0
-
40  
0
-
60  
0
-
-
-
-
-
-
30  
-
-
35  
-
-
40  
-
-
50  
-
4,5  
4,5  
Write Enable to Output in High-Z  
Output Active from Write End  
5
5
5
5
4
REV. 1.2 May 2001 V62C1802048L(L)  
V62C1802048L(L)  
Timing Waveform of Read Cycle 1 (3,6,7,9) (Address Controlled)  
tRC  
Address  
tAA  
tOH  
DOUT  
Data Valid  
Timing Waveform of Read Cycle 2 (5,6,8,9) (CE1 Controlled)  
tRC  
CE1  
tOE  
OE  
tOHZ  
tCHZ  
tOLZ  
tACE  
DOUT  
Data Valid  
tPD  
tCLZ  
tPU  
ICC  
ISB  
Supply Current  
50%  
50%  
Timing Waveform of Read Cycle 3 (3,6,8,9) (CE2 Controlled)  
tRC  
CE2  
tOE  
OE  
tOHZ  
tCHZ  
tOLZ  
tACE  
DOUT  
Data Valid  
tPD  
tCLZ  
tPU  
ICC  
ISB  
Supply Current  
50%  
50%  
5
REV. 1.2 May 2001 V62C1802048L(L)  
V62C1802048L(L)  
Timing Waveform of Write Cycle 1 (10,11) (WE Controlled)  
tWC  
tAW  
tWR  
Address  
tWP  
WE  
tAS  
tDW  
tDH  
DIN  
Data Valid  
tWZ  
tOW  
DOUT  
Timing Waveform of Write Cycle 2 (10,11) (CE1 Controlled)  
tWC  
tAW  
tWR  
Address  
CE1  
tAS  
tCW  
tWP  
WE  
tWZ  
tDW  
tDH  
DIN  
Data Valid  
DOUT  
Timing Waveform of Write Cycle 3 (10,11) (CE2 Controlled)  
tWC  
tAW  
tWR  
Address  
tAS  
tCW  
CE2  
WE  
tWP  
tWZ  
tDW  
tDH  
DIN  
Data Valid  
DOUT  
6
REV. 1.2 May 2001 V62C1802048L(L)  
V62C1802048L(L)  
Data Retention Characteristics (L Version Only)(1)  
Parameter  
Symbol  
VDR  
Test Condition  
Min Max Unit  
-
V
for Data Retention  
CE > VCC - 0.2V or  
1.0  
V
CC  
1
Data Retention Current  
ICCDR  
CE < + 0.2V  
1
mA  
2
Chip Deselect to Data Retention Time  
Operation Recovery Time(2)  
tCDR  
tR  
VIN > VCC - 0.2V or  
VIN < 0.2V  
0
-
-
ns  
ns  
t
RC  
Data Retention Waveform (L Version Only) (TA = 00C to +700C / -400C to +850C)  
Data Retention Mode  
VCC  
Vcc_typ  
V
>
1.0V  
Vcc_typ  
DR  
tCDR  
tR  
CE  
V
V
V
IH  
DR  
IH  
Notes  
1. L-version includes this feature.  
2. This Parameter is samples and not 100% tested.  
3. For test conditions, see AC Test Condition, Figure A.  
4. This parameter is tested with CL = 5pF as shown in Figure B. Transition is measured + 500mV from steady-state voltage.  
5. This parameter is guaranteed, but is not tested.  
6. WE is HIGH for read cycle.  
7. CE1 and OE are LOW and CE2 is HIGH for read cycle.  
8. Address valid prior to or coincident with CE1 transition LOW or CE2 transition HIGH.  
9. All read cycle timings are referenced from the last valid address to the first transtion address.  
10. CE1 or WE must be HIGH or CE2 must be LOW during address transition.  
11. All write cycle timings are referenced from the last valid address to the first transition address.  
7
REV. 1.2 May 2001 V62C1802048L(L)  
V62C1802048L(L)  
Ordering Information  
Device Type*  
Speed  
Package  
8x13.4 mm 32-pin Plastic STSOP  
V62C1802048L-70V  
V62C1802048L-85V  
V62C1802048L-100V  
V62C1802048L-150V  
70 ns  
85 ns  
100 ns  
150 ns  
V62C1802048LL-70V  
V62C1802048LL-85V  
V62C1802048LL-100V  
V62C1802048LL-150V  
70 ns  
85 ns  
100 ns  
150 ns  
V62C1802048L-70T  
V62C1802048L-85T  
V62C1802048L-100T  
V62C1802048L-150T  
70 ns  
85 ns  
100 ns  
150 ns  
8 x 20 mm 32-pin Plastic TSOP1  
V62C1802048LL-70T  
V62C1802048LL-85T  
V62C1802048LL-100T  
V62C1802048LL-150T  
70 ns  
85 ns  
100 ns  
150 ns  
* For Industrial Temperature tested devices, an “I” designator will be added to the end of the Device number.  
8
REV. 1.2 May 2001 V62C1802048L(L)  
MOSEL VITELIC WORLDWIDE OFFICES  
V62C1802048L(L)  
U.S.A.  
TAIWAN  
SINGAPORE  
UK & IRELAND  
SUITE 50, GROVEWOOD  
BUSINESS CENTRE  
STRATHCLYDE BUSINESS  
PARK  
BELLSHILL, LANARKSHIRE,  
SCOTLAND, ML4 3NQ  
PHONE: 44-1698-748515  
FAX: 44-1698-748516  
3910 NORTH FIRST STREET  
SAN JOSE, CA 95134  
PHONE: 408-433-6000  
FAX: 408-433-0952  
7F, NO. 102  
10 ANSON ROAD #23-13  
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PHONE: 65-3231801  
FAX: 65-3237013  
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PHONE: 886-2-2545-1213  
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5/01  
Printed in U.S.A.  
© Copyright 2001, MOSEL VITELIC Inc.  
The information in this document is subject to change without  
notice.  
MOSEL VITELIC subjects its products to normal quality control  
sampling techniques which are intended to provide an assurance  
of high quality products suitable for usual commercial applica-  
tions. MOSEL VITELIC does not do testing appropriate to provide  
100% product quality assurance and does not assume any liabil-  
ity for consequential or incidental arising from any use of its prod-  
ucts. If such products are to be used in applications in which  
personal injury might occur from failure, purchaser must do its  
own quality assurance testing appropriate to such applications.  
MOSEL VITELIC makes no commitment to update or keep cur-  
rent the information contained in this document. No part of this  
document may be copied or reproduced in any form or by any  
means without the prior written consent of MOSEL-VITELIC.  
MOSEL VITELIC 3910 N. First Street, San Jose, CA 95134-1501 Ph: (408) 433-6000 Fax: (408) 433-0952 Tlx: 371-9461  

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