MSN0620D-TO252 [MORESEMI]
60V(D-S) N-Channel Enhancement Mode Power MOS FET;型号: | MSN0620D-TO252 |
厂家: | MORE Semiconductor |
描述: | 60V(D-S) N-Channel Enhancement Mode Power MOS FET |
文件: | 总6页 (文件大小:673K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MSN0620D
60V(D-S) N-ChannelEnhancement Mode Power MOS FET
GENERAL FEATURES
● VDS =60V,ID =20A
RDS(ON) <45mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Lead Free
Application
●
●
●
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
PIN Configuration
TO-252-2L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2500PCS
MSN0620D
MSN0620D
TO-252-2L
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
VGS
±20
20
14
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
60
A
Maximum Power Dissipation
40
W
PD
Derating factor
0.27
72
W/℃
mJ
℃
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
-55 To 175
TJ,TSTG
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
MSN0620D
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
3.7
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
BVDSS
IDSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
60
-
-
-
-
-
1
V
μA
nA
IGSS
-
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VDS=5V,ID=4.5A
1.0
-
-
37
-
3.0
45
-
V
mΩ
S
11
Clss
Coss
Crss
-
-
-
500
60
-
-
-
PF
PF
PF
VDS=30V,VGS=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
25
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
5
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD=30V,ID=2A,RL=6.7Ω
2.6
16.1
2.3
12
VGS=10V,RG=3Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
V
DS=48V,ID=15A,
GS=10V
Gate-Source Charge
4.1
4.5
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=20A
-
-
-
-
1.2
20
-
V
A
-
trr
TJ = 25°C, IF =20A
35
53
nS
nC
Reverse Recovery Charge
di/dt = 100A/μs(Note3)
Qrr
ton
-
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
MORE Semiconductor Company Limited
http://www.moresemi.com
2/6
MSN0620D
Test circuit
1)EAS test Circuits
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
MORE Semiconductor Company Limited
http://www.moresemi.com
3/6
MSN0620D
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Figure 6 Source- Drain Diode Forward
MORE Semiconductor Company Limited
http://www.moresemi.com
4/6
MSN0620D
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
MORE Semiconductor Company Limited
http://www.moresemi.com
5/6
MSN0620D
TO-252-2L Package Information
MORE Semiconductor Company Limited
http://www.moresemi.com
6/6
相关型号:
©2020 ICPDF网 联系我们和版权申明