MSN0620D-TO252 [MORESEMI]

60V(D-S) N-Channel Enhancement Mode Power MOS FET;
MSN0620D-TO252
型号: MSN0620D-TO252
厂家: MORE Semiconductor    MORE Semiconductor
描述:

60V(D-S) N-Channel Enhancement Mode Power MOS FET

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MSN0620D  
60V(D-S) N-ChannelEnhancement Mode Power MOS FET  
GENERAL FEATURES  
VDS =60V,ID =20A  
RDS(ON) <45m@ VGS=10V  
High density cell design for ultra low Rdson  
Fully characterized Avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
Special process technology for high ESD capability  
Lead Free  
Application  
Power switching application  
Hard Switched and High Frequency Circuits  
Uninterruptible Power Supply  
Marking and pin Assignment  
PIN Configuration  
TO-252-2L top view  
Schematic diagram  
Package Marking And Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
2500PCS  
MSN0620D  
MSN0620D  
TO-252-2L  
-
-
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter Symbol  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
VDS  
VGS  
±20  
20  
14  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
60  
A
Maximum Power Dissipation  
40  
W
PD  
Derating factor  
0.27  
72  
W/℃  
mJ  
Single pulse avalanche energy (Note 5)  
Operating Junction and Storage Temperature Range  
EAS  
-55 To 175  
TJ,TSTG  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
1/6  
MSN0620D  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RθJC  
3.7  
/W  
Electrical Characteristics (TA=25unless otherwise noted)  
Parameter  
Symbol  
Condition  
Min Typ  
Max  
Unit  
Off Characteristics  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage Current  
On Characteristics (Note 3)  
Gate Threshold Voltage  
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic Characteristics (Note4)  
Input Capacitance  
BVDSS  
IDSS  
VGS=0V ID=250μA  
VDS=60V,VGS=0V  
VGS=±20V,VDS=0V  
60  
-
-
-
-
-
1
V
μA  
nA  
IGSS  
-
±100  
VGS(th)  
RDS(ON)  
gFS  
VDS=VGS,ID=250μA  
VGS=10V, ID=20A  
VDS=5V,ID=4.5A  
1.0  
-
-
37  
-
3.0  
45  
-
V
mΩ  
S
11  
Clss  
Coss  
Crss  
-
-
-
500  
60  
-
-
-
PF  
PF  
PF  
VDS=30V,VGS=0V,  
Output Capacitance  
F=1.0MHz  
Reverse Transfer Capacitance  
Switching Characteristics (Note 4)  
Turn-on Delay Time  
25  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
5
-
-
-
-
nS  
nS  
nS  
nS  
nC  
nC  
nC  
Turn-on Rise Time  
V
DD=30V,ID=2A,RL=6.7Ω  
2.6  
16.1  
2.3  
12  
VGS=10V,RG=3Ω  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Qg  
Qgs  
Qgd  
V
DS=48V,ID=15A,  
GS=10V  
Gate-Source Charge  
4.1  
4.5  
V
Gate-Drain Charge  
Drain-Source Diode Characteristics  
Diode Forward Voltage (Note 3)  
Diode Forward Current (Note 2)  
Reverse Recovery Time  
VSD  
IS  
VGS=0V,IS=20A  
-
-
-
-
1.2  
20  
-
V
A
-
trr  
TJ = 25°C, IF =20A  
35  
53  
nS  
nC  
Reverse Recovery Charge  
di/dt = 100A/μs(Note3)  
Qrr  
ton  
-
Forward Turn-On Time  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
2. Surface Mounted on FR4 Board, t 10 sec.  
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.  
4. Guaranteed by design, not subject to production  
5. EAS conditionTj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
2/6  
MSN0620D  
Test circuit  
1EAS test Circuits  
2Gate charge test Circuit:  
3Switch Time Test Circuit:  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
3/6  
MSN0620D  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)  
Vds Drain-Source Voltage (V)  
TJ-Junction Temperature()  
Figure 1 Output Characteristics  
Figure 4 Rdson-JunctionTemperature  
Vgs Gate-Source Voltage (V)  
Qg Gate Charge (nC)  
Figure 2 Transfer Characteristics  
Figure 5 Gate Charge  
ID- Drain Current (A)  
Vsd Source-Drain Voltage (V)  
Figure 3 Rdson- Drain Current  
Figure 6 Source- Drain Diode Forward  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
4/6  
MSN0620D  
Vds Drain-Source Voltage (V)  
TJ-Junction Temperature()  
Figure 7 Capacitance vs Vds  
Figure 9 BVDSS vs Junction Temperature  
Vds Drain-Source Voltage (V)  
TJ-Junction Temperature()  
Figure 8 Safe Operation Area  
Figure 10 VGS(th) vs Junction Temperature  
Square Wave Pluse Duration(sec)  
Figure 11 Normalized Maximum Transient Thermal Impedance  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
5/6  
MSN0620D  
TO-252-2L Package Information  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
6/6  

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