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TM400HA-2H

更新时间：2024-09-18 01:59:38
品牌：MITSUBISHI
描述：MEDIUM POWER GENERAL USE INSULATED TYPE

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TM400HA-2H 概述

MEDIUM POWER GENERAL USE INSULATED TYPE 中功率一般使用绝缘型 可控硅整流器

TM400HA-2H 规格参数

生命周期：Not Recommended包装说明：SPECIAL SHAPE, R-PUSS-X2
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.72Is Samacsys：N
外壳连接：ISOLATED配置：SEPARATE, 2 ELEMENTS
最大直流栅极触发电流：100 mA最大直流栅极触发电压：3 V
快速连接描述：0螺丝端子的描述：0
JESD-30 代码：R-PUSS-X2最大漏电流：40 mA
通态非重复峰值电流：8000 A元件数量：2
端子数量：2最大通态电流：400000 A
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SPECIAL SHAPE认证状态：Not Qualified
最大均方根通态电流：628 A断态重复峰值电压：1600 V
重复峰值反向电压：1600 V子类别：Silicon Controlled Rectifiers
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER触发设备类型：SCR
Base Number Matches：1

TM400HA-2H 数据手册

通过下载TM400HA-2H数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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MITSUBISHI THYRISTOR MODULES  
TM400HA-M,-H,-24,-2H  
MEDIUM POWER GENERAL USE  
INSULATED TYPE  
TM400HA-M,-H,-24,-2H  
• IT (AV) Average on-state current.......... 400A  
• VRRM Repetitive peak reverse voltage  
........ 400/800/1200/1600V  
• VDRM Repetitive peak off-state voltage  
........ 400/800/1200/1600V  
• ONE ARM  
• Insulated Type  
• UL Recognized  
Yellow Card No. E80276 (N)  
File No. E80271  
APPLICATION  
DC motor control, NC equipment, AC motor control, Contactless switches,  
Electric furnace temperature control, Light dimmers  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
A
K
A
K
K
G
35  
65  
80  
2–φ5.5  
2
Tab#110, t=0.5  
2–M8  
LABEL  
Feb.1999  
MITSUBISHI THYRISTOR MODULES  
TM400HA-M,-H,-24,-2H  
MEDIUM POWER GENERAL USE  
INSULATED TYPE  
ABSOLUTE MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
M
H
24  
2H  
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
400  
480  
320  
400  
480  
320  
800  
960  
640  
800  
960  
640  
1200  
1350  
960  
1600  
1700  
1280  
1600  
1700  
1280  
V
V
V
V
V
V
VRSM  
VR (DC)  
VDRM  
VDSM  
VD (DC)  
Repetitive peak off-state voltage  
Non-repetitive peak off-state voltage  
DC off-state voltage  
1200  
1350  
960  
Symbol  
Parameter  
RMS on-state current  
Average on-state current  
Conditions  
Ratings  
Unit  
A
IT (RMS)  
IT (AV)  
ITSM  
620  
400  
Single-phase, half-wave 180° conduction, TC=66°C  
A
Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value  
2
8000  
2.7 × 10  
100  
A
2
5
2
I t  
I t for fusing  
Value for one cycle of surge current  
A s  
di/dt  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C  
Peak gate power dissipation  
A/µs  
W
10  
Average gate power dissipation  
Peak gate forward voltage  
3.0  
W
10  
V
Peak gate reverse voltage  
5.0  
V
Peak gate forward current  
4.0  
A
Junction temperature  
–40~+125  
–40~+125  
2500  
°C  
Tstg  
Storage temperature  
°C  
Viso  
Isolation voltage  
Mounting torque  
Weight  
Charged part to case  
V
8.83~10.8  
90~110  
1.47~1.96  
15~20  
N·m  
kg·cm  
N·m  
kg·cm  
g
Main terminal screw M8  
—
—
Mounting screw M5  
Typical value  
450  
ELECTRICAL CHARACTERISTICS  
Limits  
Typ.  
—
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
—
Max.  
40  
IRRM  
Repetitive peak reverse current  
Repetitive peak off-state current  
On-state voltage  
Tj=125°C, VRRM applied  
Tj=125°C, VDRM applied  
mA  
mA  
V
—
—
40  
IDRM  
VTM  
—
—
1.4  
—
Tj=125°C, ITM=1200A, instantaneous meas.  
500  
—
—
dv/dt  
VGT  
Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM  
V/µs  
V
—
3.0  
—
Gate trigger voltage  
Tj=25°C, VD=6V, RL=2Ω  
0.25  
15  
—
VGD  
Gate non-trigger voltage  
Gate trigger current  
Tj=125°C, VD=1/2VDRM  
V
—
100  
0.1  
0.08  
IGT  
Tj=25°C, VD=6V, RL=2Ω  
mA  
°C/W  
°C/W  
—
—
Rth (j-c)  
Rth (c-f)  
Thermal resistance  
Junction to case, per 1/2 module  
Case to fin, conductive grease applied, per 1/2 module  
—
—
Contact thermal resistance  
Measured with a 500V megohmmeter between main terminal  
and case  
10  
—
—
—
Insulation resistance  
MΩ  
Feb.1999  
MITSUBISHI THYRISTOR MODULES  
TM400HA-M,-H,-24,-2H  
MEDIUM POWER GENERAL USE  
INSULATED TYPE  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTIC  
RATED SURGE (NON-REPETITIVE)  
ON-STATE CURRENT  
104  
7
10000  
8000  
6000  
4000  
2000  
0
Tj=125°C  
5
3
2
103  
7
5
3
2
102  
7
5
3
2
101  
0.6  
1
2
3
5 7 10  
20 30 5070100  
1.0  
1.4  
1.8  
2.2  
2.6  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
GATE CHARACTERISTICS  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE (JUNCTION TO CASE)  
100 2 3 5 7101  
4
3
2
0.10  
V
FGM=10V  
P
GM=10W  
101  
0.08  
0.06  
0.04  
7
V
GT=3.0V  
5
3
2
100  
7
5
P
G(AV)=  
Tj=25°C  
3.0W  
I
=
100GmTA  
3
2
0.02  
0
10 –1  
V
GD=0.25V  
IFGM=4.0A  
7
5
4
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 100  
2
3
4
10  
1 2 3 5 7  
10  
2 3 5 7  
10  
2 3 5 7  
10  
GATE CURRENT (mA)  
TIME (s)  
MAXIMUM AVERAGE ON-STATE  
POWER DISSIPATION  
(SINGLE PHASE HALFWAVE)  
LIMITING VALUE OF THE AVERAGE  
ON-STATE CURRENT  
(SINGLE PHASE HALFWAVE)  
500  
400  
300  
200  
100  
0
130  
120  
110  
100  
90  
120°  
90°  
θ
θ
180°  
60°  
360°  
360°  
RESISTIVE,  
INDUCTIVE  
LOAD  
RESISTIVE,  
INDUCTIVE  
LOAD  
θ=30°  
80  
70  
θ=30° 60° 90° 120° 180°  
60  
50  
0
50 100 150 200 250 300 350 400  
0
100  
200  
300  
400  
AVERAGE ON-STATE CURRENT (A)  
AVERAGE ON-STATE CURRENT (A)  
Feb.1999  
MITSUBISHI THYRISTOR MODULES  
TM400HA-M,-H,-24,-2H  
MEDIUM POWER GENERAL USE  
INSULATED TYPE  
MAXIMUM AVERAGE ON-STATE  
POWER DISSIPATION  
LIMITING VALUE OF THE AVERAGE  
ON-STATE CURRENT  
(RECTANGULAR WAVE)  
(RECTANGULAR WAVE)  
800  
600  
400  
200  
0
130  
120  
110  
100  
90  
DC  
270°  
180°  
θ
120°  
90°  
60°  
θ=30°  
360°  
RESISTIVE,  
INDUCTIVE  
LOAD  
80  
θ
70  
360°  
RESISTIVE,  
INDUCTIVE  
LOAD  
DC  
60  
θ=30° 60° 90° 120° 180°  
270°  
50  
0
200  
400  
600  
0
200  
400  
600  
AVERAGE ON-STATE CURRENT (A)  
AVERAGE ON-STATE CURRENT (A)  
Feb.1999  

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