TM200DZ-M [MITSUBISHI]
HIGH POWER GENERAL USE INSULATED TYPE; 高功率一般使用绝缘型
| 型号： | TM200DZ-M |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER GENERAL USE INSULATED TYPE |
| 文件： | 总4页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
TM200DZ/CZ/PZ-M,-H,-24,-2H
• IT (AV) Average on-state current.......... 200A
• VRRM Repetitive peak reverse voltage
........ 400/800/1200/1600V
• VDRM Repetitive peak off-state voltage
........ 400/800/1200/1600V
• DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
(DZ Type)
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
(DZ)
3–φ6.5
4–M8
K2
A1
18
K1
16
K2
A2
CR1
G2
K1
K2
G2
A1
A1
A1
A2
K2
CR2
K1
G1
K1
G1
18
16
(CZ)
(PZ)
K2
32
30
30
CR1
G2
68.5
68.5
A2
K1 K2
150
CR2
K1
G1
Tab#110,
t=0.5
K2
CR1
G2
K2
K1
A2
LABEL
CR2
K1
G1
(DZ Type)
(Bold line is connective bar.)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
M
H
24
2H
VRRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
400
480
320
400
480
320
800
960
640
800
960
640
1200
1350
960
1600
1700
1280
1600
1700
1280
V
V
V
V
V
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
1200
1350
960
Symbol
Parameter
RMS on-state current
Average on-state current
Conditions
Ratings
Unit
A
IT (RMS)
IT (AV)
ITSM
310
200
Single-phase, half-wave 180° conduction, TC=64°C
A
Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value
2
4000
6.7 × 10
100
A
2
4
2
I t
I t for fusing
Value for one cycle of surge current
A s
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C
Peak gate power dissipation
A/µs
W
10
Average gate power dissipation
Peak gate forward voltage
3.0
W
10
V
Peak gate reverse voltage
5.0
V
Peak gate forward current
4.0
A
Junction temperature
–40~+125
–40~+125
2500
°C
Tstg
Storage temperature
°C
Viso
Isolation voltage
Mounting torque
Weight
Charged part to case
V
8.83~10.8
90~110
1.96~3.92
20~40
N·m
kg·cm
N·m
kg·cm
g
Main terminal screw M8
—
—
Mounting screw M6
Typical value
300
ELECTRICAL CHARACTERISTICS
Limits
Typ.
—
Symbol
Parameter
Test conditions
Unit
Min.
—
Max.
30
IRRM
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
mA
mA
V
—
—
30
IDRM
VTM
—
—
1.35
—
Tj=125°C, ITM=600A, instantaneous meas.
500
—
—
dv/dt
VGT
Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM
V/µs
V
—
3.0
—
Gate trigger voltage
Tj=25°C, VD=6V, RL=2Ω
0.25
15
—
VGD
Gate non-trigger voltage
Gate trigger current
Tj=125°C, VD=1/2VDRM
V
—
100
0.2
0.1
IGT
Tj=25°C, VD=6V, RL=2Ω
mA
°C/W
°C/W
—
—
Rth (j-c)
Rth (c-f)
Thermal resistance
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
—
—
Contact thermal resistance
Measured with a 500V megohmmeter between main terminal
and case
10
—
—
—
Insulation resistance
MΩ
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
102
7
4000
3500
3000
2500
2000
1500
1000
500
Tj=125°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10 –1
0
1
2
3
5 7 10
20 30 5070100
0.5
1.0
1.5
2.0
2.5
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
0 2 3 5 7
2 3
10
101
4
3
2
0.25
V
FGM=10V
P
GM=10W
101
0.20
0.15
0.10
7
V
GT=3.0V
5
3
2
100
7
5
P
G(AV)=
Tj
=25°C
3.0W
IGT
=
100mA
3
2
0.05
0
10 –1
V
GD=0.25V
I
FGM=4.0A
7
5
4
101
102
103
104
10 –3
10 –2
10 –1
100
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
GATE CURRENT (mA)
TIME (s)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
320
280
240
200
160
120
80
130
120
110
100
90
PER SINGLE
ELEMENT
θ
θ
180°
120°
360°
360°
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
90°
60°
θ=30°
80
70
PER SINGLE
ELEMENT
θ=30°
60° 90° 120° 180°
40
60
0
50
0
40
80
120
160
200
0
40
80
120
160
200
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200DZ/CZ/PZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
(RECTANGULAR WAVE)
400
350
300
250
200
150
100
50
130
PER SINGLE
DC
270°
ELEMENT
120
110
100
90
θ
θ
360°
360°
180°
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
120°
90°
60°
θ=30°
80
70
60
50
120°
θ=30° 60° 90° 180° 270° DC
PER SINGLE
ELEMENT
40
0
30
0
40 80 120 160 200 240 280 320
0
40 80 120 160 200 240 280 320
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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