RD09MUP2_11 [MITSUBISHI]
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W; 符合RoHS指令，硅MOSFET功率晶体管， 520MHz的， 8W
| 型号： | RD09MUP2_11 |
| 厂家： | 
Mitsubishi Group |
| 描述： | RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W |
| 文件： | 总9页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
DESCRIPTION
RD09MUP2 is a MOS FET type transistor
specifically designed for UHF RF power
(a)
(b)
(b)
7.0+/-0.2
0.2+/-0.05
8.0+/-0.2
amplifiers applications.
(d)
FEATURES
2.6+/-0.2
(4.5)
0.95+/-0.2
•High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode
INDEX MARK
[Gate]
(c)
TOP VIEW
SIDE VIEW
BOTTOM VIEW
DETAIL
A
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
SIDE VIEW
APPLICATION
For output stage of high power amplifiers in
UHF band mobile radio sets.
UNIT:mm
NOTES:
DETAIL
A
1. ( ) Typical value
RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
D
SYMBOL
VDSS
VGSS
ID
PARAMETER
CONDITIONS
RATINGS
40
UNIT
V
Drain to source voltage Vgs=0V
Gate to source voltage
Drain Current
Vds=0V
-5 to +10
4.0
V
G
-
A
Pin
Input Power
Zg=Zl=50
1.6
W
S
SCHEMATIC DRAWING
Pch
Channel dissipation
Junction Temperature
Storage temperature
Thermal resistance
Tc=25°C
83
W
°C
Tj
-
150
°C
Tstg
-
-40 to +125
1.5
°C/W
Rth j-c
Junction to case
Note: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)
°C
LIMITS
UNIT
SYMBOL
PARAMETER
CONDITIONS
=17V, V =0V
MIN
-
TYP
MAX.
I
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
V
V
V
-
-
10
1
uA
uA
V
DSS
DS
GS
DS
GS
I
=10V, V =0V
-
GSS
DS
V
TH
=12V, I =1mA
0.5
8
-
2.5
-
DS
Pout
f=520MHz , V =7.2V
9
-
W
%
DD
Pin=0.8W,Idq=1.0A
Drain efficiency
50
-
D
V
DD
=9.5V,Po=8W(Pin Control)
VSWRT Load VSWR tolerance
f=520MHz,Idq=1.0A,Zg=50
No destroy
-
Load VSWR=20:1(All Phase)
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS
8
6
4
2
0
60
50
40
30
20
10
0
Ta=+25°C
Vds=10V
*PCB: Glass epoxy(Size : 46.4 x40.0mm, t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(t=0.5mm)
Ids
GM
On PCB with Termal sheet
and Heat-sink
(Size : 41 x55mm, t=7.2 mm)
Free Air
0
40
80
120
160
200
0
1
2
3
4
AMBIENT TEMPERATURE Ta(deg:C.)
Vgs(V)
Vds-Ids CHARACTERISTICS
Vds VS. Ciss CHARACTERISTICS
9
8
7
6
5
4
3
2
1
0
160
140
120
100
80
Ta=+25°C
Vgs=4.5V
Vgs=4.0V
Ta=+25°C
f=1MHz
Vgs=3.5V
Vgs=3.0V
60
40
20
0
0
1
2
3
4
5
6
7
8
9
0
5
10
Vds(V)
15
20
Vds(V)
Vds VS. Coss CHARACTERISTICS
Vds VS. Crss CHARACTERISTICS
160
140
120
100
80
20
Ta=+25°C
f=1MHz
Ta=+25°C
f=1MHz
18
16
14
12
10
8
60
6
40
4
20
2
0
0
0
5
10
15
20
0
5
10
15
20
Vds(V)
Vds(V)
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=520MHz
Pin-Po CHARACTERISTICS @f=520MHz
20
15
10
5
80
70
60
50
40
30
20
10
0
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=1.0A
Ta=+25°C
Po
40
30
20
10
0
80
60
40
20
0
f=520MHz
Vdd=7.2V
Idq=1.0A
ηd
Po
η
ｄ
Gp
Idd
Ｉｄｄ
0
0
5
10
15
20
25
30
35
0.0
0.5
1.0
1.5
2.0
Pin(dBm)
Pin(W)
Vdd-Po CHARACTERISTICS @f=520MHz
20
10
Ta=25°C
f=520MHz
Pin=1.0W
Idq=1.0A
Po
15
10
5
8
5
3
0
Zg=ZI=50 ohm
Idd
0
4
6
8
10
12
Vdd(V)
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
TEST CIRCUIT (f=520MHz)
Vgg
Vdd
22μF、50V
C2
C1
19mm
19mm
W
W
L
RD09MUP2
520MHz
4.7k OHM
3.5mm
5pF
RF-OUT
3mm
5mm
7mm
330pF
13mm
5pF
3mm
6mm
RF-in
330pF
21mm
33pF
47pF
5pF
Note：Boad material Glass-Epoxy Substrate
Micro strip line width=1.3mm/50 OHM、er:4.8、t=0.8mm
W:Line width=1.0mm
L：24.9nH、6Turns、D:0.43mm、φ2.46mm(outside diameter)
C1、C2:2200ｐF
Publication Date : Oct．2011
5
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz]
100
120
140
160
180
200
220
240
260
280
300
320
340
360
380
400
420
440
460
480
500
520
540
560
580
600
620
640
660
680
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
1000
S11
S21
S12
S22
(mag)
0.900
0.901
0.905
0.908
0.909
0.912
0.916
0.918
0.922
0.923
0.928
0.930
0.933
0.936
0.937
0.939
0.939
0.945
0.947
0.950
0.952
0.950
0.952
0.953
0.953
0.956
0.957
0.961
0.957
0.961
0.962
0.960
0.962
0.963
0.963
0.964
0.962
0.964
0.965
0.965
0.962
0.967
0.963
0.964
0.966
0.964
(ang)
-175.7
-176.4
-176.7
-177.2
-177.5
-177.6
-178.0
-178.5
-178.7
-178.9
-179.0
-179.1
-179.3
-179.6
179.9
179.7
179.3
179.1
178.9
178.8
178.7
178.3
178.1
177.6
177.2
177.0
177.0
176.9
176.8
176.5
176.2
176.0
175.5
175.3
175.2
175.0
175.0
174.7
174.5
174.1
173.8
173.5
173.5
173.2
173.1
173.0
(mag)
4.425
3.651
3.056
2.614
2.273
2.003
1.787
1.602
1.442
1.297
1.176
1.075
0.989
0.910
0.841
0.775
0.718
0.667
0.622
0.582
0.548
0.513
0.480
0.455
0.427
0.402
0.383
0.362
0.344
0.326
0.311
0.298
0.283
0.269
0.259
0.247
0.237
0.230
0.220
0.211
0.202
0.193
0.189
0.180
0.176
0.170
(ang)
75.0
71.1
67.4
64.2
61.4
58.7
55.9
53.3
50.6
48.0
45.8
44.1
42.3
40.0
37.9
36.3
34.7
33.4
32.1
30.7
29.2
28.0
26.8
25.7
24.4
23.7
23.2
22.1
21.3
20.4
19.5
19.0
18.6
17.5
17.2
16.9
16.5
15.8
16.2
15.4
15.1
15.0
14.4
13.8
14.6
14.0
(mag)
0.016
0.014
0.014
0.013
0.013
0.011
0.011
0.010
0.010
0.009
0.008
0.008
0.008
0.008
0.007
0.008
0.008
0.008
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.014
0.014
0.015
0.015
0.016
0.017
0.018
0.019
0.019
0.020
0.021
0.022
0.022
0.023
0.024
0.025
0.026
0.026
0.027
0.028
0.029
(ang)
-7.1
-8.2
-10.4
-10.9
-10.0
-8.4
-6.0
-4.1
-5.6
0.6
(mag)
0.798
0.804
0.808
0.812
0.819
0.830
0.842
0.851
0.857
0.859
0.863
0.866
0.878
0.889
0.895
0.897
0.899
0.900
0.906
0.913
0.919
0.921
0.924
0.925
0.924
0.928
0.933
0.937
0.939
0.936
0.937
0.937
0.938
0.943
0.944
0.949
0.946
0.946
0.944
0.948
0.949
0.952
0.952
0.949
0.951
0.952
(ang)
-173.9
-174.4
-174.9
-175.1
-175.2
-175.1
-175.3
-175.3
-175.8
-176.1
-176.3
-176.8
-177.1
-177.4
-177.8
-178.1
-178.6
-178.8
-179.3
-179.5
179.8
179.6
179.0
178.8
178.6
178.2
177.7
177.3
177.0
176.7
176.4
176.1
175.8
175.5
175.0
174.7
174.7
174.5
174.1
173.8
173.4
172.8
172.7
172.7
172.6
172.2
2.6
8.2
15.1
25.3
27.2
35.5
40.1
45.0
51.3
56.2
56.9
59.9
64.2
67.0
66.6
68.9
70.7
70.9
72.1
72.0
74.3
74.2
74.5
74.9
74.1
72.8
75.4
75.1
76.0
75.8
75.0
75.8
75.8
75.6
76.0
76.5
Publication Date : Oct．2011
6
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
100
120
140
160
180
200
220
240
260
280
300
320
340
360
380
400
420
440
460
480
500
520
540
560
580
600
620
640
660
680
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
1000
S11
S21
S12
S22
(mag)
0.914
0.918
0.920
0.922
0.921
0.921
0.922
0.925
0.924
0.928
0.929
0.936
0.935
0.936
0.937
0.937
0.939
0.941
0.944
0.946
0.948
0.950
0.949
0.948
0.950
0.952
0.954
0.958
0.954
0.957
0.956
0.955
0.956
0.959
0.958
0.959
0.962
0.962
0.961
0.960
0.961
0.961
0.960
0.962
0.962
0.960
(ang)
-176.9
-177.4
-178.0
-178.3
-178.6
-178.8
-179.3
-179.4
-179.8
180.0
-180.0
180.0
179.8
179.4
179.0
178.9
178.5
178.5
178.3
178.1
178.0
177.9
177.5
177.1
177.0
176.6
176.5
176.5
176.4
176.3
176.0
175.5
175.2
174.9
175.0
174.8
174.8
174.5
174.3
174.0
173.6
173.3
173.3
173.1
172.9
172.8
(mag)
4.363
3.638
3.060
2.614
2.287
2.039
1.840
1.665
1.503
1.364
1.240
1.144
1.064
0.993
0.923
0.851
0.795
0.738
0.696
0.654
0.619
0.585
0.549
0.518
0.491
0.467
0.444
0.426
0.400
0.382
0.367
0.350
0.334
0.319
0.308
0.293
0.281
0.271
0.261
0.252
0.244
0.233
0.225
0.219
0.211
0.206
(ang)
78.5
74.9
71.4
68.8
66.7
64.6
62.1
59.6
56.8
54.7
52.9
51.1
49.4
47.2
45.2
43.5
41.7
40.4
39.3
38.0
36.5
34.8
33.5
32.2
31.1
30.3
29.5
28.5
27.2
26.3
25.6
24.9
23.9
23.4
22.3
22.0
21.5
21.0
20.4
20.0
19.5
18.9
18.5
18.2
17.5
18.0
(mag)
0.012
0.012
0.011
0.011
0.011
0.010
0.010
0.010
0.009
0.009
0.009
0.009
0.009
0.009
0.009
0.009
0.009
0.009
0.010
0.011
0.011
0.012
0.012
0.014
0.014
0.014
0.015
0.016
0.017
0.017
0.018
0.019
0.019
0.020
0.021
0.021
0.022
0.023
0.023
0.025
0.025
0.026
0.027
0.027
0.029
0.029
(ang)
0.2
-0.6
0.3
1.6
4.4
6.5
8.5
8.0
(mag)
0.825
0.833
0.832
0.829
0.833
0.846
0.863
0.870
0.868
0.864
0.860
0.866
0.879
0.891
0.896
0.896
0.895
0.892
0.898
0.908
0.912
0.914
0.915
0.916
0.918
0.919
0.924
0.930
0.932
0.929
0.929
0.931
0.930
0.934
0.939
0.944
0.939
0.938
0.939
0.940
0.942
0.944
0.945
0.945
0.948
0.948
(ang)
-175.5
-176.2
-177.1
-177.3
-177.4
-177.2
-177.4
-177.5
-177.9
-178.2
-178.1
-178.4
-178.8
-179.0
-179.4
-179.7
-179.8
-180.0
179.6
179.3
178.8
178.4
178.1
178.0
177.8
177.6
177.0
176.4
176.3
176.0
175.9
175.8
175.3
174.8
174.5
174.3
174.1
174.0
173.9
173.4
173.0
172.5
172.3
172.3
172.4
172.0
10.9
13.1
18.6
26.6
27.8
32.4
34.4
40.1
47.0
52.8
50.3
56.9
59.5
62.7
63.1
63.6
65.6
66.3
67.6
69.8
69.8
70.8
71.9
72.4
72.5
73.0
72.7
74.0
73.9
74.2
74.1
73.9
74.6
74.4
74.7
74.7
74.3
74.4
Publication Date : Oct．2011
7
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have
a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
8
< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
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