QM80DY-3H [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
| 型号： | QM80DY-3H |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM80DY-3H
• IC
Collector current .......................... 80A
• VCEX Collector-emitter voltage ......... 1400V
• hFE DC current gain.............................100
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108
93
φ6.5
B2X
C2
E1
E2
C1
B
2
E
2
C1
12
28
28
E
2
3–M5
Tab#110, t=0.5
C2E1
LABEL
E
1
B1X
B1
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
1400
1400
1400
7
Unit
V
IC=1A, VEB=3V
VEB=3V
V
Emitter open
Collector open
DC
V
V
80
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
80
A
PC
800
8
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
800
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
3000
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Main terminal screw M5
V
1.47~1.96
15~20
N·m
kg·cm
N·m
kg·cm
g
—
—
Mounting torque
Weight
1.96~2.94
20~30
Mounting screw M6
Typical value
470
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
Max.
10
Collector cutoff current
VCE=1400V, VEB=3V
mA
mA
mA
V
—
—
10
ICBO
Collector cutoff current
VCB=1400V, Emitter open
VEB=7V
—
—
200
3.0
3.5
1.8
—
IEBO
Emitter cutoff current
—
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=80A, IB=1.6A
—
—
V
—
—
–IC=80A (diode forward voltage)
IC=80A, VCE=5V
V
100
—
—
—
—
3.0
20
ton
µs
—
—
ts
Switching time
VCC=800V, IC=80A, IB1=–IB2=1.6A
µs
—
—
3.0
0.155
0.6
tf
µs
—
—
Rth (j-c) Q
Rth (j-c) R
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
°C/W
°C/W
Thermal resistance
(junction to case)
—
—
Contact thermal resistance
(case to fin)
—
—
0.075
Rth (c-f)
Conductive grease applied (per 1/2 module)
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
2
200
160
120
80
103
7
VCE=5.0V
I
B
=2.0A
5
4
I
I
B
B
=1A
3
2
VCE=2.8V
=0.5A
IB=0.3A
102
7
IB=0.1A
40
5
4
T
j
j
=25°C
3
2
Tj=25°C
T
=125°C
0
100
2
3 4 5 7 101
2
3 4 5 7 102
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
7
101
7
5
5
4
4
VBE(sat)
3
2
3
2
V
CE=2.0V
T
j=25°C
100
7
100
7
IB
=1.6A
VCE(sat)
5
T
j
j
=25°C
5
4
4
T
=125°C
3
2
3
2
10 –1
10–1
3 4 5 7 101
2
3 4 5 7 102
2
1.8
2.2
2.6
3.0
3.4
3.8
2
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
102
7
5
4
3
2
5
3
2
101
ts
7
5
I
C
=100A
3
2
100
7
5
tf
V
CC=800V
I
C
=30A
I
C=80A
1
0
I
B1=–IB2=1.6A
I
C
=50A
3
T
j
=25°C
=125°C
ton
T
T
j
=25°C
2
Tj
j=125°C
10 –1
100
10 –2
10 –1
2 3 45 7
100
101
101
2 3 45 7
2 3 45 7
2 3 45 7
2 3 45 7
2 3 45 7
102 103
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
102
7
200
VCC=800V
IC=80A
5
IB1=1.6A
160
120
80
40
0
4
IB2=–4A
Tj=125°C
ts
3
2
101
7
tf
5
Tj=25°C
Tj=125°C
4
3
2
100
10 –1
2
3 4 5 7 100
2
3 4 5 7 101
0
400
800
1200 1600 2000
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
103
100
SECOND
BREAKDOWN
AREA
7
5
90
80
70
60
50
40
30
20
10
0
3
2
102
7
5
COLLECTOR
DISSIPATION
3
2
101
7
5
3
TC=25°C
NON–REPETITIVE
2
100
2 345 7 101 2 345 7 102 2 345 7 103
2
0
20 40 60 80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
100 2 3 45 7101 2 3 45
CHARACTERISTICS) (TYPICAL)
102
7
100
7
5
3
2
Tj=25°C
Tj=125°C
5
4
3
2
10 –1
7
5
101
7
3
2
10 –2
5
4
7
5
3
2
3
2
10 –3
100
10 –3 2 3 45 710 –22 3 45 710 –1 2 3 45 7 100
0
0.4
0.8
1.2
1.6
2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
102
101
100
10 –1
800
700
600
500
400
300
200
100
0
V
CC=800V
7
I
B1=–IB2=1.6A
Irr
5
T
j
j
=25°C
=125°C
4
T
3
2
Q
rr
101
7
5
4
3
2
t
rr
100
100
100
2
3 4 5 7 101
2
3 4 5 7 102
2
3 4 5 7 101
2
3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
100 2 3 45 7101 2 3 45
1.0
0.8
0.6
0.4
0.2
0
10 –3
10 –2
10 –1
100
2 3 45 7
2 3 45 7
2 3 45 7
TIME (s)
Feb.1999
相关型号：
©2020 ICPDF网 联系我们和版权申明