QM30TX-HB [MITSUBISHI]
MEDIUM POWER SWITCHING USE INSULATED TYPE; 中功率开关使用绝缘型
| 型号： | QM30TX-HB |
| 厂家： | 
Mitsubishi Group |
| 描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总5页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI TRANSISTOR MODULES
QM30TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30TX-HB
• IC
Collector current .......................... 30A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain.............................750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, Inverters, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
68
8
11–M4
(10) 18.5
18.5
18.5
18.5 (10)
4–φ5.4 0.1
10
80 0.25
94
+
P( )
B1
B2
B3
U
B5
V
W
LABEL
B4
B6
–
N( )
13
13
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Conditions
Ratings
600
600
600
7
Unit
V
IC=1A, VEB=2V
VEB=2V
V
Emitter open
Collector open
DC
V
V
30
A
–IC
Collector reverse current
Collector dissipation
Base current
DC (forward diode current)
TC=25°C
30
A
PC
250
1.8
W
A
IB
DC
Surge collector reverse current
(forward diode current)
–ICSM
Peak value of one cycle of 60Hz (half wave)
300
A
Tj
Junction temperature
Storage temperature
Isolation voltage
–40~+150
–40~+125
2500
°C
°C
Tstg
Viso
Charged part to case, AC for 1 minute
Main terminal screw M4
V
0.98~1.47
10~15
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
1.47~1.96
15~20
—
—
Mounting torque
Weight
Mounting screw M5
0.98~1.47
10~15
B(E) terminal screw M4
Typical value
520
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Limits
Typ.
—
Symbol
ICEX
Parameter
Test conditions
Unit
Min.
—
Max.
1.0
1.0
60
Collector cutoff current
VCE=600V, VEB=2V
mA
mA
mA
V
—
—
ICBO
Collector cutoff current
VCB=600V, Emitter open
VEB=7V, Collector open
—
—
IEBO
Emitter cutoff current
—
—
2.5
3.0
1.8
—
VCE (sat)
VBE (sat)
–VCEO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
IC=30A, IB=40mA
—
—
V
—
—
IC=–30A (diode forward voltage)
IC=30A, VCE=2.5V
V
750
—
—
—
—
2.0
8.0
3.0
0.5
2.0
ton
µs
—
—
ts
Switching time
VCC=300V, IC=30A, IB1=60mA, –IB2=0.6A
µs
—
—
tf
µs
—
—
Rth (j-c) Q
Rth (j-c) R
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
°C/W
°C/W
Thermal resistance
(junction to case)
—
—
Contact thermal resistance
(case to fin)
—
—
0.2
Rth (c-f)
Conductive grease applied (per 1/6 module)
°C/W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
104
7
100
80
60
40
20
0
Tj=25°C
Tj=125°C
Tj=25°C
5
3
2
103
IB=0.5A
VCE=5.0V
IB=200mA
7
5
3
2
102
7
5
VCE=2.5V
IB=20mA
IB=100mA
IB=10mA
3
2
101
100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
101
100
7
VCE=2.5V
Tj=25°C
7
5
5
4
4
3
2
3
2
VBE(sat)
10–1
7
100
7
VCE(sat)
5
5
4
4
3
2
3
2
IB=40mA
Tj=25°C
Tj=125°C
10–1
10–2
100
2
3 4 5 7 101
2
3 4 5 7 102
2.2
2.6
3.0
3.4
3.8
4.2
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
101
7
5
4
Tj=25°C
Tj=125°C
5
4
3
2
3
2
ts
100
7
tf
IC=30A
IC=20A
5
4
VCC=300V
IB1=60mA
IB2=–0.6A
IC=10A
3
2
1
0
ton
Tj=25°C
Tj=125°C
10–1
10 –3 2 3 5 710 –2 2 3 5 710 –1 2 3 5 7 100
100
2
3 4 5 7 101
2
3 4 5 7 102
BASE CURRENT IB (A)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
101
7
80
Tj=125°C
70
60
50
40
30
20
10
0
IB2=–0.6A
ts
5
4
tf
3
2
100
7
IB2=–3.0A
VCC=300V
IB1=60mA
IC=30A
5
4
3
2
Tj=25°C
Tj=125°C
10–1
10–1
2
3 4 5 7 100
2
3 4 5 7 101
0
100 200 300 400 500 600 700 800
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
102
100
7
5
SECOND
BREAKDOWN
AREA
100µS
500µS
90
80
70
60
50
3
2
1mS
DC
101
7
5
COLLECTOR
DISSIPATION
3
2
100
7
5
40
30
20
10
0
3
2
TC=25°C
NON-REPETITIVE
10 –1
100
101
102
103
2 3 5 7
0
20 40 60 80 100 120 140 160
2 3 5 7
2 3 5 7
COLLECTOR-EMITTER VOLTAGE VCE (V)
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
100 2 3 457101 2 3 4 5 7102
CHARACTERISTICS) (TYPICAL)
102
7
0.5
5
0.4
4
3
2
0.3
0.2
101
7
5
4
3
2
0.1
0
Tj=25°C
Tj=125°C
2.0
100
10 –3
10 –2
10 –1
100
2 3 5 7
0.4
0.8
1.2
1.6
2.4
2 3 5 7
2 3 5 7
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
102
102
500
400
300
200
100
0
7
5
V
CC=300V
I
I
B1=60mA
B2=–0.6A
3
2
101
101
I
rr
7
5
3
2
100
7
5
100
Q
rr
3
trr
T
j
=25°C
2
T
j
=125°C
10 –1
10 –1
100
2
3 4 5 7 101
2
3 4 5 7 102
100
101
102
103
2 3 5 7
2 3 5 7
2 3 5 7
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
100 2 3 57 101 2 3
2.0
1.6
1.2
0.8
0.4
0
10 –3
10 –2
10 –1
2 3 5 7
100
2 3 5 7
2 3 5 7
TIME (s)
Feb.1999
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