MIG75Q7CSB1X [MITSUBISHI]

High Power Switching Applications Motor Control Applications; 大功率开关应用电机控制应用
MIG75Q7CSB1X
型号: MIG75Q7CSB1X
厂家: Mitsubishi Group    Mitsubishi Group
描述:

High Power Switching Applications Motor Control Applications
大功率开关应用电机控制应用

运动控制电子器件 开关 信号电路 电动机控制 电机 局域网
文件: 总10页 (文件大小:195K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MIG75Q7CSB1X  
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>  
MIG75Q7CSB1X (1200V/75A 7in1)  
High Power Switching Applications  
Motor Control Applications  
Integrates inverter, brake power circuits and control circuits (IGBT drive units, protection units for short-circuit  
current, over current, under voltage and over temperature) in one package.  
The electrodes are isolated from case.  
V
= 2.2 V (typ.)  
CE (sat)  
UL recognized File No. E87989  
Weight: 278 g (typ.)  
Equivalent Circuit  
20  
19  
18  
17  
16  
15  
14  
13  
12 11 10  
9
8
7
6
5
4
3
2
1
FO IN  
GND  
V
GND  
OUT  
FO IN  
V
GND FO IN  
OUT GND  
V
GND FO IN  
OUT GND  
V
GND GND IN FO  
V
GND IN FO  
V
GND IN FO V  
D
D
D
D
D
D
D
V
GND  
V
S
V
V
OUT GND  
V
S
OUT GND  
V
OUT GND  
V
S
OUT  
S
S
S
S
W
V
U
B
N
P
1.  
V
(U)  
2.  
FO (U)  
(W)  
3.  
10. FO (W) 11.  
17. IN (X) 18.  
IN (U)  
4. GND (U) 5.  
V
(V)  
6.  
FO (V)  
(L)  
7.  
IN (V)  
FO (L)  
D
D
8. GND (V) 9.  
15. Open 16.  
V
IN (W)  
IN (Y)  
12. GND (W) 13.  
V
14.  
D
D
IN (B)  
19. IN (Z) 20. GND (L)  
2004-10-01 1/10  
MIG75Q7CSB1X  
Package Dimensions  
Unit: mm  
1.  
7.  
V
(U)  
2.  
8. GND (V) 9.  
14. FO (L) 15.  
20. GND (L)  
FO (U)  
3.  
IN (U)  
4. GND (U) 5.  
V
(V)  
6.  
FO (V)  
D
D
IN (V)  
(L)  
V
(W) 10. FO (W) 11.  
IN (W)  
IN (X)  
12. GND (W)  
D
13.  
19.  
V
Open  
16.  
IN (B)  
17.  
18.  
IN (Y)  
D
IN (Z)  
2004-10-01 2/10  
MIG75Q7CSB1X  
Signal Terminal Layout  
Unit: mm  
1.  
7.  
V
(U)  
2.  
8. GND (V) 9.  
14. FO (L) 15.  
20. GND (L)  
FO (U)  
3.  
IN (U)  
4. GND (U) 5.  
V
(V)  
6.  
FO (V)  
D
D
IN (V)  
(L)  
V
(W) 10. FO (W) 11.  
IN (W)  
IN (X)  
12. GND (W)  
D
13.  
19.  
V
Open  
16.  
IN (B)  
17.  
18.  
IN (Y)  
D
IN (Z)  
2004-10-01 3/10  
MIG75Q7CSB1X  
Maximum Ratings (T = 25°C)  
j
Stage  
Characteristic  
Condition  
P-N power terminal  
Symbol  
Ratings  
Unit  
Supply voltage  
V
900  
1200  
75  
V
V
CC  
Collector-emitter voltage  
Collector current  
V
CES  
Tc = 25°C, DC  
Tc = 25°C, DC  
Tc = 25°C  
I
A
C
Inverter  
Forward current  
I
75  
A
F
Collector power dissipation  
Junction temperature  
Supply voltage  
P
830  
150  
900  
1200  
40  
W
°C  
V
C
T
j
P-N power terminal  
V
CC  
Collector-emitter voltage  
Collector current  
Tc = 25°C, DC  
V
CES  
V
I
A
C
Brake  
Reverse voltage  
V
R
1200  
40  
V
Forward current  
Tc = 25°C, DC  
Tc = 25°C  
I
A
F
Collector power dissipation  
Junction temperature  
Control supply voltage  
Input voltage  
P
500  
150  
20  
W
°C  
V
C
T
j
V -GND terminal  
D
V
D
IN-GND terminal  
FO-GND terminal  
FO sink current  
V
20  
V
IN  
Control  
Module  
Fault output voltage  
Fault output current  
Operating temperature  
Storage temperature range  
V
20  
V
FO  
FO  
I
14  
mA  
°C  
°C  
V
Tc  
20~+100  
40~+125  
2500  
2
T
stg  
AC 1 minute  
V
ISO  
Isolation voltage  
Screw torque (terminal)  
Screw torque (mounting)  
M4  
M5  
N·m  
N·m  
3
Electrical Characteristics  
1. Inverter Stage  
Characteristic  
Symbol  
Test Condition  
T = 25°C  
Min  
Typ.  
Max  
Unit  
mA  
1
j
Collector cut-off current  
I
V
= 1200 V  
CE  
CEX  
T = 125°C  
j
10  
2.6  
3.0  
V
I
= 15 V,  
T = 25°C  
j
2.2  
D
Collector-emitter saturation voltage  
Forward voltage  
V
V
V
= 75 A,  
CE (sat)  
C
T = 125°C  
j
V
= 15 V 0 V  
IN  
V
I
= 75 A, T = 25°C  
2.4  
2.0  
0.3  
0.3  
1.5  
0.4  
2.8  
3.0  
F
F
j
t
on  
t
t
c (on)  
V
V
j
= 600 V, I = 75 A,  
CC C  
= 15 V, V = 15 V 0 V,  
D
IN  
Switching time  
µs  
t
rr  
T = 25°C, Inductive load  
(Note 1)  
t
2.5  
off  
c (off)  
Note 1: Switching time test circuit and timing chart.  
2004-10-01 4/10  
MIG75Q7CSB1X  
2. Brake Stage  
Characteristic  
Symbol  
Test Condition  
T = 25°C  
Min  
Typ.  
Max  
Unit  
mA  
1
j
Collector cut-off current  
I
V
= 1200 V  
CE  
CEX  
T = 125°C  
j
10  
2.6  
V
I
= 15 V,  
T = 25°C  
j
2.2  
D
Collector-emitter saturation voltage  
V
V
= 40 A,  
CE (sat)  
C
T = 125°C  
j
3.0  
1
V
= 15 V 0 V  
IN  
T = 25°C  
j
Reverse current  
Forward voltage  
I
R
V
= 1200 V  
R
mA  
V
T = 125°C  
j
10  
2.1  
3.0  
V
I
= 40 A, T = 25°C  
1.7  
2.0  
0.75  
0.7  
1.5  
0.3  
F
F
j
t
on  
V
V
j
= 600 V, I = 40 A,  
C
t
t
CC  
D
c (on)  
= 15 V, V = 15 V 0 V,  
IN  
Switching time  
µs  
t
T = 25°C, Inductive load  
rr  
(Note 1)  
t
2.5  
off  
c (off)  
Note 1: Switching time test circuit and timing chart.  
3. Control Stage (T = 25°C)  
j
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
mA  
High side  
I
13  
52  
1.6  
2.5  
10  
17  
68  
D (H)  
Control circuit current  
V
= 15 V  
D
Low side  
I
D (L)  
Input-on signal voltage  
V
V
V
V
= 15 V  
= 15 V  
1.4  
2.2  
8
1.8  
2.8  
12  
V
V
IN (on)  
IN (off)  
D
D
Input-off signal voltage  
Protection  
Fault output current  
Normal  
I
I
FO (on)  
FO (off)  
V
V
= 15 V  
mA  
A
D
D
0.1  
Inverter  
120  
65  
Over current  
<
= 15 V, T 125°C  
=
j
OC  
SC  
protection trip level  
Brake  
Inverter  
120  
65  
Short-circuit current  
<
=
j
V
V
= 15 V, T 125°C  
A
D
D
protection trip level  
Brake  
Over current cut-off time  
t
= 15 V  
5
µs  
°C  
off (OC)  
Trip level  
OT  
110  
118  
98  
12.0  
12.5  
2
125  
Over temperature  
Case temperature  
protection  
Reset level  
OTr  
UV  
Trip level  
11.0  
12.0  
1
12.5  
13.0  
3
Control supply under  
V
voltage protection  
Reset level  
UVr  
Fault output pulse width  
t
V
= 15 V  
D
ms  
FO  
4. Thermal Resistance (Tc = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Inverter IGBT stage  
Inverter FRD stage  
Brake IGBT stage  
Brake FRD stage  
0.15  
0.35  
0.25  
0.6  
Junction to case thermal resistance  
Case to fin thermal resistance  
R
R
°C/W  
°C/W  
th (j-c)  
Compound is applied  
0.017  
th (c-f)  
2004-10-01 5/10  
MIG75Q7CSB1X  
Switching Time Test Circuit  
Intelligent power module  
TLP559 (IGM)  
P
V
D
0.1 µF  
22 µF  
15 kΩ  
OUT  
IN  
V
S
15 V  
GND  
GND  
V
CC  
U (V, W, B)  
V
D
I
=
F
0.1 µF  
22 µF  
15 kΩ  
16 mA  
OUT  
IN  
PG  
V
S
15 V  
N
GND  
GND  
Timing Chart  
Input Pulse  
15 V  
0
V
Waveform  
IN  
2.5 V  
1.6 V  
90% I  
rr  
I
rr  
I
Waveform  
Waveform  
C
20% I  
rr  
t
rr  
90%  
V
CE  
10%  
10%  
t
10%  
10%  
t
c (on)  
c (off)  
t
on  
t
off  
2004-10-01 6/10  
MIG75Q7CSB1X  
5. Recommended conditions for application  
Characteristic  
Supply voltage  
Symbol  
Test Condition  
P-N Power terminal  
Min  
Typ.  
Max  
Unit  
V
13.5  
600  
15  
800  
16.5  
20  
V
V
CC  
V
D
V -GND Signal terminal  
D
Control supply voltage  
Carrier frequency  
fc  
PWM Control  
kHz  
Switching time test circuit  
(see page.6)  
tdead  
3
µs  
Dead time  
(Note 2)  
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When  
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead  
time given above.  
Dead Time Timing Chart  
15 V  
Waveform  
V
V
IN  
IN  
0
15 V  
Waveform  
0
t
t
dead  
dead  
2004-10-01 7/10  
MIG75Q7CSB1X  
I
– V  
I
– V  
CE  
C
CE  
C
150  
100  
50  
150  
100  
50  
V
D
= 15 V  
V
= 15 V  
D
V
D
= 17 V  
V
D
= 17 V  
V
D
= 13 V  
V
D
= 13 V  
Common emitter  
Common emitter  
T = 25°C  
T = 125°C  
j
j
0
0
0
0
1
2
3
4
5
80  
5
1
2
3
4
5
Collector-emitter voltage  
V
(V)  
Collector-emitter voltage  
V
(V)  
CE  
CE  
Switching time – I  
Switching time – I  
C
C
10  
10  
t
t
on  
3
1
3
1
t
t
on  
off  
off  
t
t
c (off)  
t
c (off)  
c (on)  
0.3  
0.1  
0.3  
0.1  
t
c (on)  
T = 25°C  
T = 125°C  
j
j
V
V
= 600 V  
V
V
= 600 V  
CC  
= 15 V  
D
CC  
0.03  
0.01  
0.03  
0.01  
= 15 V  
D
L-LOAD  
L-LOAD  
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
60  
70  
80  
Collector current  
I
(A)  
Collector current  
I
(A)  
C
C
I
– V  
trr, Irr – I  
F
F
F
150  
100  
50  
100  
5
3
Irr  
trr  
10  
5
3
Common cathode  
: T = 25°C  
Common cathode  
: T = 25°C  
j
j
: T = 125°C  
j
: T = 125°C  
j
0
0
1
0
1
2
3
4
10  
20  
30  
40  
50  
60  
(A)  
70  
80  
Forward voltage  
V
(V)  
Forward current  
I
F
F
2004-10-01 8/10  
MIG75Q7CSB1X  
OC – Tc  
I
(H) – fc  
D
200  
150  
100  
50  
25  
20  
15  
10  
5
Inverter stage  
Brake stage  
V
D
= 15 V  
V
D
= 15 V  
0
0
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
1400  
10  
Case temperature Tc (°C)  
Carrier frequency fc (kHz)  
I
(L) – fc  
Reverse bias SOA  
D
80  
60  
40  
20  
0
140  
120  
100  
80  
OC  
60  
40  
<
20  
T
125°C  
j
V
= 15V  
V
= 15 V  
D
D
0
0
0
5
10  
15  
20  
25  
200  
400  
600  
800  
1000  
1200  
(V)  
Carrier frequency fc (kHz)  
Collector-emitter voltage  
V
CE  
R
– tw Inverter stage  
R
th (t)  
– tw Brake stage  
th (t)  
10  
1
10  
1
TC = 25°C  
TC = 25°C  
Diode stage  
Diode stage  
Transistor stage  
0.1  
0.01  
0.1  
0.01  
Transistor stage  
0.001  
0.01  
0.1  
Pulse width tw (s)  
1
10  
0.001  
0.01  
0.1  
Pulse width tw (s)  
1
2004-10-01 9/10  
MIG75Q7CSB1X  
Turn on loss – I  
Turn off loss – I  
C
C
100  
10  
1
100  
10  
1
V
= 600 V  
V = 600 V  
CC  
V = 15 V  
D
CC  
= 15 V  
V
D
L-LOAD  
: T = 25°C  
L-LOAD  
: T = 25°C  
j
j
: T = 125°C  
: T = 125°C  
j
j
0
0
0
0
10  
20  
30  
40  
50  
60  
(A)  
70  
80  
10  
20  
30  
40  
50  
60  
(A)  
70  
80  
Collector current  
I
C
Collector current  
I
C
2004-10-01 10/10  

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