MGFX38V0510 [MITSUBISHI]

RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2;
MGFX38V0510
元器件型号: MGFX38V0510
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2

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PDF文件: 总1页 (文件大小:163K)
下载文档:  下载PDF数据表文档文件
型号参数:MGFX38V0510参数

MGFX38V0510-01

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFX38V0510-51

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFX38V1722

RF Power Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2

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0 MITSUBISHI

MGFX38V1722-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFX38V1722-51

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFX38V9095

RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2

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0 MITSUBISHI

MGFX38V9095-01

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFX38V9095-51

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFX38V9500-01

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFX38V9500-51

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFX39V0717

10.7-11.7 GHz BAND / 8W

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3 MITSUBISHI

MGFX39V0717

10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET

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20 MITSUBISHI

MGFX39V0717_11

10.7-11.7 GHz BAND / 8W

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14 MITSUBISHI

MGFX39V0717-01

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGH20-300-C

Optical Position Encoder, ROTARY OPTICAL POSITION ENCODER

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0 CUI