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MGFX35V9500-01 [MITSUBISHI]

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN;

MGFX35V9500-01


元器件型号：	MGFX35V9500-01
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN 局域网放大器 CD 晶体管
PDF文件：	总2页 (文件大小：79K)
下载文档：	下载PDF数据表文档文件
型号参数：MGFX35V9500-01参数

MGFX35V9500-51

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFX36V0717

10.7-11.7 GHz BAND / 4W

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23 MITSUBISHI

MGFX36V0717

10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET

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25 MITSUBISHI

MGFX36V0717_11

10.7-11.7 GHz BAND / 4W

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12 MITSUBISHI

MGFX36V0717-01

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFX38V0005

Transistor

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0 MITSUBISHI

MGFX38V0510

RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2

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0 MITSUBISHI

MGFX38V0510-01

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFX38V0510-51

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFX38V1722

RF Power Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2

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0 MITSUBISHI

MGFX38V1722-01

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFX38V1722-51

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFX38V9095

RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2

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0 MITSUBISHI

MGFX38V9095-01

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-14, 2 PIN

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0 MITSUBISHI

MGFX38V9095-51

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

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