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MGFS45V2527-01 [MITSUBISHI]

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN;

MGFS45V2527-01


元器件型号：	MGFS45V2527-01
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN 局域网放大器 CD 晶体管
PDF文件：	总2页 (文件大小：81K)
下载文档：	下载PDF数据表文档文件
型号参数：MGFS45V2527-01参数

MGFS45V2527A

2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET

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34 MITSUBISHI

MGFS45V2527A

2.7-3.5 GHz BAND / 30W

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27 MITSUBISHI

MGFS45V2527A_11

2.7-3.5 GHz BAND / 30W

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13 MITSUBISHI

MGFS45V2527A-01

Transistor

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0 MITSUBISHI

MGFS45V2527A-51

Transistor

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0 MITSUBISHI

MGFS45V2735

2.7-3.5 GHz BAND / 30W

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44 MITSUBISHI

MGFS45V2735

2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET

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29 MITSUBISHI

MGFS45V2735

2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET

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41 MITSUBISHI

MGFS45V2735_04

2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET

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30 MITSUBISHI

MGFS45V2735_11

2.7-3.5 GHz BAND / 30W

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24 MITSUBISHI

MGFS45V2735-01

Transistor

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0 MITSUBISHI

MGFS48B2122

2.11-2.17 GHz BAND / 60W

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14 MITSUBISHI

MGFS48B2122

2.11 - 2.17 GHz BAND 60W GaAs FET

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26 MITSUBISHI

MGFS48B2122_11

2.11-2.17 GHz BAND / 60W

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10 MITSUBISHI

MGFS48BK2122A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-53, 2 PIN

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0 MITSUBISHI

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