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MGFC40V5964A-01 [MITSUBISHI]

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET;

MGFC40V5964A-01


元器件型号：	MGFC40V5964A-01
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET 局域网放大器 CD 晶体管
PDF文件：	总2页 (文件大小：82K)
下载文档：	下载PDF数据表文档文件
型号参数：MGFC40V5964A-01参数

MGFC40V6472

6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

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19 MITSUBISHI

MGFC40V6472

6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

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5 MITSUBISHI

MGFC40V6472_04

6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

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4 MITSUBISHI

MGFC40V6472-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

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0 MITSUBISHI

MGFC40V6472A

6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET

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7 MITSUBISHI

MGFC40V6472A-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC40V7177

7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET

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19 MITSUBISHI

MGFC40V7177A

7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET

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7 MITSUBISHI

MGFC40V7177A-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC40V7177B

7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET

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9 MITSUBISHI

MGFC40V7785

7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET

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8 MITSUBISHI

MGFC40V7785

7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET

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15 MITSUBISHI

MGFC40V7785-01

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

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0 MITSUBISHI

MGFC40V7785-51

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

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0 MITSUBISHI

MGFC40V7785A

7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET

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6 MITSUBISHI

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