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MGFC40V3742A-51 [MITSUBISHI]

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET;

MGFC40V3742A-51


元器件型号：	MGFC40V3742A-51
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET 局域网放大器 CD 晶体管
PDF文件：	总2页 (文件大小：82K)
下载文档：	下载PDF数据表文档文件
型号参数：MGFC40V3742A-51参数

MGFC40V4450

C band internally matched power GaAs FET

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11 MITSUBISHI

MGFC40V4450

4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET

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24 MITSUBISHI

MGFC40V4450_04

4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET

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5 MITSUBISHI

MGFC40V4450_11

C band internally matched power GaAs FET

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10 MITSUBISHI

MGFC40V4450-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

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0 MITSUBISHI

MGFC40V4450A

4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET

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7 MITSUBISHI

MGFC40V4450A-01

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC40V5258

5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET

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29 MITSUBISHI

MGFC40V5258

C band internally matched power GaAs FET

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19 MITSUBISHI

MGFC40V5258

5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET

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13 MITSUBISHI

MGFC40V5258_04

5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET

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9 MITSUBISHI

MGFC40V5258_11

C band internally matched power GaAs FET

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11 MITSUBISHI

MGFC40V5258-01

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC40V5258-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC40V5964

C band internally matched power GaAs FET

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8 MITSUBISHI

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