MGFC39V3436 [MITSUBISHI]
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET; 3.4 - 3.6GHz的波段8W内部匹配的GaAs FET
| 型号： | MGFC39V3436 |
| 厂家： | 
Mitsubishi Group |
| 描述： | 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| 文件： | 总2页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC39V3436
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC39V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING
Unit : millimeters
2
N
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 8W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
.
I
0
0.6 +/-0.15
M
-
2
/
+
(2)
(2)
R-1.6
3
.
1
1
9
.
2
1
GLP = 11 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz
N
I
M
2
(3)
Low distortion [item -51]
2
.
0
-
/
IM3=-45dBc(Typ.) @Po=28dBm S.C.L.
4
.
0
-
/
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
+
1
.
0
6
.
2
+
6
.
item 51 : 3.4 - 3.6 GHz band digital ratio communication
5
1
.
4
QUALITY GRADE
IG
2
.
0
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 2.4 (A)
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
GF-8
RG=50 (ohm)
< Keep safety first in your circuit designs! >
(Ta=25deg.C)
ABSOLUTE MAXIMUM RATINGS
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
Symbol
Parameter
Gate to drain voltage
Ratings
Unit
V
VGDO
-15
-15
VGSO
Gate to source voltage
Drain current
V
ID
7.5
A
IGR
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
-20
mA
mA
W
IGF
42
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
PT
Tch
*1
42.8
175
deg.C
deg.C
Tstg
-65 / +175
*1 : Tc=25deg.C
(Ta=25deg.C)
ELECTRICAL CHARACTERISTICS
Limits
Unit
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
7.5
-
IDSS
gm
VDS = 3V , VGS = 0V
VDS = 3V , ID = 2.2A
VDS = 3V , ID = 20mA
-
-
-
-
2
-
A
S
V
Saturated drain current
Transconductance
VGS(off)
-4.5
Gate to source cut-off voltage
Output power at 1dB gain
compression
P1dB
38
39
-
dBm
GLP
ID
VDS=10V, ID(RF off)=2.4A, f=3.4 - 3.6GHz
10
11
-
-
3
dB
A
Linear power gain
-
-
Drain current
P.A.E.
IM3
32
-45
3
-
%
Power added efficiency
3rd order IM distortion *1
-42
-
-
dBc
Rth(ch-c)
deg.C/W
delta Vf method
3.5
Thermal resistance
*2
*1 : item -51,2 tone test,Po=28dBm Single Carrier Level,f=3.6GHz,delta f=5MHz
*2 : Channel-case
MITSUBISHI
ELECTRIC
18-Sep-'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC39V3436
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25deg.C)
Po,PAE vs. Pin
P1dB,GLP vs. f
40
38
36
34
32
30
28
26
24
22
20
50
40
30
20
10
0
38
17
16
15
14
13
12
11
VDS=10(V)
IDS=1.2(A)
f=3.5(GHz)
Po
VDS=10(V)
IDS=1.2(A)
P1dB
37
36
PAE
35
GLP
34
33
32
10
15
20
25
30
35
3.3
3.4
3.5
3.6
3.7
INPUT POWER Pin (dBm)
FREQUENCY f(GHz)
Po,IM3 vs Pin
33
31
29
27
25
23
21
19
VDS=10(V)
IDS=1.2(A)
f=3.6GHz
Delta f=5(MHz)
0
Po
-10
-20
-30
-40
-50
-60
PAE
7
9
11
13
15
17
19
21
INPUT POWER Pin(dBm S.C.L.)
S parameters ( Ta=25deg.C , VDS=10(V),IDS=2.4(A) )
S-Parameters (TYP.)
f
S11
S21
S12
S22
(GHz)
3.30
Magn.
0.48
0.49
0.49
0.49
0.48
0.46
0.43
0.38
0.36
Angle(deg)
-179
166
Magn.
4.148
4.146
4.127
4.111
4.119
4.123
4.079
4.072
4.049
Angle(deg)
Magn.
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
Angle(deg)
Magn.
0.28
0.29
0.29
0.30
0.31
0.32
0.33
0.33
0.33
Angle(deg)
-136
-150
-157
-170
178
29
16
-38
-52
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
159
9
-58
145
-4
-70
133
-17
-24
-37
-51
-59
-79
126
-85
171
112
-97
158
98
-113
-118
145
88
140
MITSUBISHI
ELECTRIC
18-Sep-'98
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