FX20VSJ-3 [MITSUBISHI]
HIGH-SPEED SWITCHING USE; 高速开关使用
| 型号： | FX20VSJ-3 |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
FX20VSJ-3
OUTLINE DRAWING
Dimensions in mm
4
10.5 max
4.5
1.3
+0.3
–0
0
1
5
B
0.5
0.8
1
2
3
3
1 GATE
4V DRIVE
•
2
3
4
DRAIN
SOURCE
DRAIN
1
VDSS ............................................................ –150V
rDS (ON) (MAX) ................................................ 0.29Ω
•
•
2
4
ID ................................................................... –20A
Integrated Fast Recovery Diode (TYP.) ........ 100ns
•
•
TO-220S
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
VGS = 0V
VDS = 0V
–150
±20
V
V
–20
A
IDM
IDA
Drain current (Pulsed)
–80
A
Avalanche drain current (Pulsed) L = 30µH
Source current
–20
A
IS
–20
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
–80
A
PD
70
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
1.2
Tstg
—
Storage temperature
Weight
Typical value
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–150
—
Typ.
—
Max.
—
ID = –1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –10A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.0
0.29
0.32
–2.9
—
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.0
—
–1.5
0.23
0.25
–2.3
17.5
4470
248
115
15
Ω
—
Ω
—
V
—
S
Ciss
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
42
—
VDD = –80V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
273
114
–1.0
—
—
Fall time
—
—
IS = –10A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
–1.5
1.79
—
Rth (ch-c)
trr
—
°C/W
ns
IS = –20A, dis/dt = 100A/µs
Reverse recovery time
—
100
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
–2
100
80
60
40
20
0
–102
–7
–5
–3
–2
tw = 10µs
100µs
–101
–7
–5
–3
–2
1ms
–100
–7
–5
10ms
DC
TC = 25°C
–3
–2
Single Pulse
1
2
3
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
50
100
150
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
–16
–12
–8
–10
–8
–6
–4
–2
0
VGS = –10V
–8V
TC = 25°C
Pulse Test
TC = 25°C
Pulse Test
VGS =
–10V
–8V
–6V
–4V
–6V
–4V
–3V
–3V
–2.5V
PD = 70W
–2.5V
–4
0
0
–2
–4
–6
–8
–10
0
–1.0
–2.0
–3.0
–4.0
–5.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–10
–8
–6
–4
–2
0
0.5
0.4
0.3
0.2
0.1
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
I
D
= –30A
VGS = –4V
–10V
–20A
–10A
0
–2
–4
–6
–8
–10
–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
–40
–30
–20
–10
0
102
7
T
V
C
= 25°C
VDS = –10V
DS = –10V
Pulse Test
5
Pulse Test
T
C
= 25°C
75°C
3
2
125°C
101
7
5
3
2
100
0
–2
–4
–6
–8
–10
–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
103
7
T
V
V
C
h = 25°C
DD = –80V
GS = –10V
GEN = RGS = 50Ω
Ciss
5
5
3
2
R
3
2
t
t
d(off)
103
7
5
f
102
7
3
2
Coss
Crss
t
t
r
5
102
7
5
3
2
T
C
h = 25°C
f = 1MH
GS = 0V
3
2
d(on)
Z
V
101
101
–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
–7–100 –2 –3 –5 –7–101 –2 –3 –5 –7
DRAIN CURRENT (A)
DRAIN-SOURCE VOLTAGE
V
DS (V)
ID
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–20
–16
–12
–8
T
C
h = 25°C
T
C
= 25°C
I
D = –20A
Pulse Test
TC = 125°C
V
DS = –50V
75°C
25°C
–80V
–100V
–4
0
0
20
40
60
80
(nC)
100
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Q
g
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
GS = –10V
= 1/2I
Pulse Test
V
DS = –10V
ID = –1mA
I
D
D
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
V
I
GS = 0V
D = –1mA
3
2
D = 1.0
0.5
0.2
100
7
5
3
2
P
DM
0.1
0.05
0.02
0.01
10–1
tw
7
5
T
tw
Single Pulse
D
=
T
3
2
10–2
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Jan.1999
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