FS16SM-9 [MITSUBISHI]
HIGH-SPEED SWITCHING USE; 高速开关使用
| 型号： | FS16SM-9 |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS16SM-9
HIGH-SPEED SWITCHING USE
FS16SM-9
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
r
φ 3.2
2
4.4
1.0
5.45
q
w
e
5.45
0.6
2.8
4
w r
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................450V
¡rDS (ON) (MAX) .............................................................. 0.45Ω
¡ID ......................................................................................... 16A
e
TO-3P
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
450
±30
V
16
A
IDM
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
48
A
PD
150
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
4.8
Tstg
—
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16SM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
450
±30
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
V
(BR) DSS Drain-source breakdown voltage
(BR) GSS Gate-source breakdown voltage
V
V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10V
ID = 8A, VGS = 10V
ID = 8A, VDS = 10V
—
—
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
—
0.35
2.80
8.0
1700
230
40
0.45
3.60
—
Ω
—
V
6.0
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 25V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
30
—
Rise time
—
50
—
VDD = 200V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
170
60
—
Fall time
—
—
IS = 8A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
1.5
—
2.0
0.83
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
200
160
120
80
5
tw=10µs
100µs
3
2
101
7
5
1ms
10ms
DC
3
2
100
7
5
3
TC = 25°C
Single Pulse
2
40
10–1
7
5
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
0
50
100
150
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS =20V 10V 6V
50
40
30
20
10
0
20
TC = 25°C
Pulse Test
PD =
TC = 25°C
Pulse Test
PD =
150W
150W
16
12
8
VGS = 20V
5V
10V
6V
5V
4V
4
4V
0
0
10
20
30
40
50
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16SM-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
0.8
0.6
0.4
20
16
12
8
VGS = 10V
T
C
= 25°C
ID = 25A
Pulse Test
20V
T
C
= 25°C
Pulse Test
16A
8A
4
0.2
0
0
0
0
3
4
8
12
16
20
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
24
16
8
102
7
5
T
C
V
= 25°C
DS = 50V
Pulse Test
VDS = 10V
Pulse Test
3
2
101
7
5
TC = 25°C
75°C
125°C
3
2
0
100
4
8
12
16
20
100
2
3
5 7 101
2
3
5 7 102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
3
2
103
7
5
Tch = 25°C
V
DD = 200V
GS = 10V
V
R
GEN = RGS = 50Ω
Ciss
3
2
103
7
5
3
2
td(off)
102
7
5
t
t
f
r
Coss
Crss
102
7
5
3
2
3
2
t
d(on)
Tch = 25°C
f = 1MHz
VGS = 0V
101
101
100
2
3
5 7 101
2
3
5 7 102
5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT
ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16SM-9
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
40
32
24
16
8
V
GS = 0V
TC = 125°C
Tch = 25°C
=16A
Pulse Test
I
D
75°C
25°C
VDS = 100V
200V
400V
4
0
0
0
20
40
60
80
(nC)
100
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Qg
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
V
DS = 10V
= 1mA
V
GS = 10V
I
D
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
1.4
1.2
1.0
0.8
0.6
0.4
V
GS = 0V
5
I
D = 1mA
3
2
100
7
D=1
0.5
5
3
0.2
0.1
P
DM
2
10–1
7
tw
T
tw
T
0.05
0.02
0.01
5
D=
3
2
Single Pulse
10–2
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH (s)
t
w
Feb.1999
相关型号：
FS16UM-5
Power Field-Effect Transistor, 16A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
POWEREX
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