FS10VS-12-T2 [MITSUBISHI]
Power Field-Effect Transistor, 10A I(D), 600V, 0.94ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN;![FS10VS-12-T2](http://pdffile.icpdf.com/pdf2/p00302/img/icpdf/FS10VS-12-T1_1825142_icpdf.jpg)
型号: | FS10VS-12-T2 |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 10A I(D), 600V, 0.94ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN |
文件: | 总4页 (文件大小:197K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00271/img/page/FS10VS-14A-T_1626621_files/FS10VS-14A-T_1626621_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00271/img/page/FS10VS-14A-T_1626621_files/FS10VS-14A-T_1626621_2.jpg)
FS10VS-14A-T1
Power Field-Effect Transistor, 10A I(D), 700V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00222/img/page/FS10SM-2_1295651_files/FS10SM-2_1295651_1.jpg)
FS10VS-2
Power Field-Effect Transistor, 10A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
POWEREX
![](http://pdffile.icpdf.com/pdf2/p00255/img/page/FS10VS-2_1546314_files/FS10VS-2_1546314_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00255/img/page/FS10VS-2_1546314_files/FS10VS-2_1546314_2.jpg)
FS10VS-2
Power Field-Effect Transistor, 10A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00234/img/page/FS10VS-2-T2_1369790_files/FS10VS-2-T2_1369790_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00234/img/page/FS10VS-2-T2_1369790_files/FS10VS-2-T2_1369790_2.jpg)
FS10VS-2-T2
Power Field-Effect Transistor, 10A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00234/img/page/FS10VS-3-T1_1369798_files/FS10VS-3-T1_1369798_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00234/img/page/FS10VS-3-T1_1369798_files/FS10VS-3-T1_1369798_2.jpg)
FS10VS-3-T1
Power Field-Effect Transistor, 10A I(D), 150V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00264/img/page/FS10VS-5-T1_1589120_files/FS10VS-5-T1_1589120_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00264/img/page/FS10VS-5-T1_1589120_files/FS10VS-5-T1_1589120_2.jpg)
FS10VS-5-T1
Power Field-Effect Transistor, 10A I(D), 250V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00264/img/page/FS10VS-5-T1_1589120_files/FS10VS-5-T1_1589120_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00264/img/page/FS10VS-5-T1_1589120_files/FS10VS-5-T1_1589120_2.jpg)
FS10VS-5-T2
Power Field-Effect Transistor, 10A I(D), 250V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
MITSUBISHI
©2020 ICPDF网 联系我们和版权申明