FG1000BV-90DA [MITSUBISHI]
HIGH POWER INVERTER USE PRESS PACK TYPE; 大功率逆变器使用压装型
| 型号： | FG1000BV-90DA |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER INVERTER USE PRESS PACK TYPE |
| 文件： | 总4页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
FG1000BV-90DA
GATE (WHITE)
390 ± 8
AUXILIARY CATHODE
CONNECTOR (RED)
φ 47
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
● ITQRM Repetitive controllable on-state current ..........1000A
● IT(AV) Average on-state current.......................400A
● VDRM Repetitive peak off state voltage ..................4500V
● Anode short type
ANODE
φ 47
φ 75 MAX
φ 3.5 DEPTH 2.2 ± 0.2
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
90DA
17
VRRM
VRSM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
V
V
V
V
V
V
17
VR(DC)
VDRM
17
+
Repetitive peak off-state voltage
4500
4500
3600
+
VDSM
Non-repetitive peak off-state voltage
DC off-state voltage+
VD(DC)
+ : VGK = –2V
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
Parameter
Conditions
Ratings
1000
630
Unit
A
Repetitive controllable on-state current VDM = 3375V, Tj = 125°C, CS = 0.7µF, LS = 0.3µH
RMS on-state current
A
Average on-state current
f = 60Hz, sine wave θ = 180°, Tf = 70°C
400
A
Surge (non-repetitive) on-state current One half cycle at 60Hz
Current-squared, time integration One cycle at 60Hz
Critical rate of rise of on-state current VD = 2250V, IGM = 20A, Tj = 125°C
Peak forward gate voltage
8.4
kA
A2s
A/µs
V
I2t
2.9 × 105
1000
10
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Peak reverse gate voltage
17
V
Peak forward gate current
60
A
Peak gate reverse current
500
A
Peak forward gate power dissipation
240
W
kW
W
W
°C
°C
kN
g
Peak reverse gate power dissipation
15
Average forward gate power dissipation
45
Average reverse gate power dissipation
100
Junction temperature
–40 ~ +125
–40 ~ +150
12 ~ 15
530
Tstg
Storage temperature
—
Mounting force required
Weight
Recommended value 13
Standard value
—
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Limits
Unit
Symbol
Parameter
On-state voltage
Test conditions
Min
—
Typ
—
—
—
—
—
—
Max
4.0
100
100
100
—
VTM
IRRM
IDRM
IRG
Tj = 125°C, ITM = 1000A, Instantaneous measurment
Tj = 125°C, VRRM Applied
V
—
mA
mA
mA
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Tj = 125°C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 17V
—
—
dv/dt
tgt
Critical rate of rise of off-state voltage
Turn-on time
Tj = 125°C, VD = 2250V, VGK = –2V
Tj = 125°C, ITM = 1000A, IGM = 20A, VD = 2250V
1000
—
V/
µs
10
µs
T
j
= 125°C, ITM = 1000A, VDM = 3375V, diGQ/d
t = –30A/µs
tgq
Turn-off time
—
—
20
µs
VRG = 17V, CS = 0.7µF, LS = 0.3µH
IGQM
VGT
—
—
—
—
330
—
—
1.5
A
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
V
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
IGT
—
2500
0.03
mA
Rth(j-f)
Junction to fin
—
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
RATED SURGE ON-STATE CURRENT
104
10
8
7
Tj = 125°C
5
3
2
103
7
5
6
3
2
4
102
7
5
3
2
2
101
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
100
2
3
5 7 101
2
3
5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
100 2 3 5 7101
GATE CHARACTERISTICS
102
0.050
7
5
3
2
0.045
0.040
0.035
0.030
0.025
0.020
0.015
PFGM = 240W
VFGM = 10V
101
7
5
3
2
PFG(AV) = 45W
VGT = 1.5V
100
7
5
3
2
Tj = 25°C
0.010
0.005
0
IFGM = 60A
IGT = 2500mA
10–1
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
GATE CURRENT (mA)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (S)
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
140
(SINGLE-PHASE HALF WAVE)
2000
1750
1500
1250
1000
750
500
250
0
130
θ
θ
180°
120°
120
110
100
90
360°
360°
90°
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
60°
θ = 30°
80
70
θ = 30°
60° 90° 120° 180°
60
0
100
200
300
400
0
100
200
300
400
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
(RECTANGULAR WAVE)
2000
140
130
120
110
100
90
270°
180°
DC
1750
1500
1250
1000
750
500
250
0
θ
120°
90°
360°
60°
θ = 30°
RESISTIVE,
INDUCTIVE
LOAD
80
θ
70
360°
60
θ = 30° 60°
120°
180°
270°
RESISTIVE,
INDUCTIVE
LOAD
90°
DC
50
40
0
100 200 300 400 500 600 700 800
0
100 200 300 400 500 600 700 800
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
8000
7000
6000
5000
4000
3000
2000
1000
0
10.0
8.0
6.0
4.0
2.0
0
I
d
d
T
= 1000A, V
iT/d = 500A/µs
iG/d = 10A/µs
= 125°C
D = 2250V
V
D
= 5 ~ 20V
= 25 ~ 200A
HALF SINE WAVE
t
IT
t
T
j
t
gt
t
d
–60
–20
20
60
100
140
0
10
20
30
40
50
JUNCTION TEMPERATURE (°C)
TURN ON GATE CURRENT (A)
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
25
50
VD = 2250V
VD = 2250V
VDM = 3375V
IT = 1000A
VRG = 17V
VDM = 3375V
diGQ/dt = –30A/µs
VRG = 17V
20
40
CS = 0.7µF
LS = 0.3µH
Tj = 125°C
CS = 0.7µF
LS = 0.3µH
15 Tj = 125°C
tgq
ts
30
20
10
0
10
5
tgq
ts
0
200
400
600
800
1000
10
20
30
40
50
TURN OFF CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
500
400
300
200
100
0
500
400
300
VD = 2250V
VDM = 3375V
diGQ/dt = –30A/µs
VRG = 17V
CS = 0.7µF
LS = 0.3µH
VD = 2250V
VDM = 3375V
IT = 1000A
VRG = 17V
CS = 0.7µF
LS = 0.3µH
Tj = 125°C
200
100
0
Tj = 125°C
200
400
600
800
1000
10
20
30
40
50
TURN OFF CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN ON SWITCHING ENERGY
(MAXIMUM)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
3.0
1.6
1.4
1.2
1.0
0.8
0.6
diT/dt = 300A/µs
2.5
2.0
200A/µs
100A/µs
VD = 2250V
VDM = 3375V
diGQ/dt = –30A/µs
VRG = 17V
CS = 0.7µF
LS = 0.3µH
1.5
1.0
0.5
VD = 2250V
IGM = 25A
diG/dt = 10A/µs
CS = 0.7µF
RS = 5Ω
0.4
0.2
0
Tj = 125°C
Tj = 125°C
200
400
600
800
1000
200
400
600
800
1000 1200
TURN ON CURRENT (A)
TURN OFF CURRENT (A)
Aug.1998
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