FD500JV-90DA_02 [MITSUBISHI]

HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE; 高功率，高频率按包装类型


型号：	FD500JV-90DA_02
厂家：	Mitsubishi Group
描述：	HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率按包装类型高功率电源
文件：	总2页 (文件大小：35K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MITSUBISHI SOFT RECOVERY DIODE

FD500JV-90DA

HIGH POWER, HIGH FREQUENCY

PRESS PACK TYPE

OUTLINE DRAWING

Dimensions in mm

FD500JV-90DA

φ3.5 ± 0.2

2.2 ± 0.2DEPTH

TYPE NAME

φ47

φ75MAX

φ3.5 ± 0.2

2.2 ± 0.2DEPTH

¡VRRM Repetitive peak reverse voltage ................... 4500V

¡IT(AV) Average on-state current ...................... 500A

APPLICATION

High-power inverters

Clamp diode for GCT Thyristor

Power supplies as high frequency rectifiers

MAXIMUM RATINGS

Voltage class

Symbol

Parameter

Conditions

Unit

VRRM

VRSM

VR(DC)

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

—

4500

3600

Symbol

Parameter

RMS forward current

Average forward current

Surge forward current

Current-squared, time integration

Critical rate of rise of reverse

recovery current

Conditions

Ratings

Unit

Applied for all condition angles

785

500

IF(RMS)

IF(AV)

IFSM

I²t

f = 60Hz, sinewave θ = 180°, Tf =76°C

4.2× 10⁵

A²s

One half cycle at 60Hz, Tj =125°C start

IFM =500A, VR = 2250V, Tj = 25/125°C (See Fig. 1, 2)

2000

A/µs

di/dt

Operation junction temperature

Storage temperature

Mounting force required

Weight

–20 ~ 125

–40 ~ 150

22 ~ 28

—

°C

Tstg

—

°C

(Recommended value 23.5kN)

Typical value 530g

—

ELECTRICAL CHARACTERISTICS

Limits

Typ.

—

Symbol

Parameter

Forward voltage

Test conditions

Unit

Min.

—

Max.

3.5

VFM

IFM = 1570A, Tj = 125°C

IRRM

QRR

Repetitive peak reverse current VRM = 4500V, Tj = 125°C

—

µC

Reverse recovery charge

—

1500

—

IFM = 500A, di/dt = 1000A/µs, VR = 2250V, Tj = 125°C

(See Fig. 1, 2)

Erec

Rth(j-f)

Reverse recovery energy

Thermal resistance

—

J/P

K/W

Junction to Fin

—

0.027

Jul. 2002

MITSUBISHI SOFT RECOVERY DIODE

FD500JV-90DA

HIGH POWER, HIGH FREQUENCY

PRESS PACK TYPE

RR=(trr×IRM)/2

trr

ANL

L(load)

TUD

di/dt(0~50%IRM

)

50%I

50%IRM

CDi

GCT

90%IRM

Fig. 1 Reverse recovery test circuit

Fig. 2 Reverse recovery waveform

PERFORMANCE CURVES

Erec VS I

(TYPICAL)

MAXIMUM ON STATE CHARACTERISTIC

10⁴

CONDITION

= 2250V, T

/d = 1000A/µs

j =125°C

Tj=125°C

10³

=25°C

10²

10¹

100 200 300 400 500 600 700 800

IF (A)

VFM (V)

MAXIMUM THERMAL IMPEDANCE

CHARACTERISTIC

(JUNCTION TO FIN)

10⁰2 3 5 710¹

0.04

0.03

0.02

0.01

10^-3

10^-2

10^-1

10⁰

TIME (S)

Jul. 2002

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