CR02 [MITSUBISHI]
LOW POWER USE PLANAR PASSIVATION TYPE; 低功耗的平面型钝化
| 型号： | CR02 |
| 厂家： | 
Mitsubishi Group |
| 描述： | LOW POWER USE PLANAR PASSIVATION TYPE |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
Dimensions
CR02AM
OUTLINE DRAWING
in mm
φ5.0 MAX
4.4
VOLTAGE
2
1
CLASS
TYPE
NAME
3
T
T
1
2
TERMINAL
TERMINAL
1
2
3
GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
1.25 1.25
φ0.7
1
3
2
• IT (AV) ........................................................................0.3A
• VDRM .................................................... 200V/300V/400V
• IGT .........................................................................100µA
JEDEC : TO-92
APPLICATION
Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher,
other general purpose control applications
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
4
6
8
VRRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
200
300
160
200
160
300
400
240
300
240
400
500
320
400
320
V
V
V
V
V
VRSM
VR (DC)
VDRM
✽1
✽1
Repetitive peak off-state voltage
DC off-state voltage
VD (DC)
Symbol
Parameter
RMS on-state current
Average on-state current
Surge on-state current
Conditions
Ratings
0.47
0.3
Unit
A
IT (RMS)
IT (AV)
ITSM
Commercial frequency, sine half wave, 180° conduction, Ta=30°C
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive
10
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
0.4
A s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
0.1
0.01
6
W
W
V
6
V
0.1
A
–40 ~ +125
–40 ~ +125
0.23
°C
°C
g
Tstg
Storage temperature
—
Weight
Typical value
✽1. With Gate-to-cathode resistance RGK=1kΩ
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
—
—
—
0.2
1
Typ.
—
Max.
0.1
0.1
1.6
0.8
—
mA
mA
V
IRRM
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Tj=125°C, VRRM applied
IDRM
VTM
VGT
VGD
IGT
Tj=125°C, VDRM applied, RGK=1kΩ
Ta=25°C, ITM=0.6A, instantaneous value
—
—
✽3
—
V
Gate trigger voltage
Ta=25°C, VD=6V, IT=0.1A
—
Gate non-trigger voltage
Gate trigger current
Tj=125°C, VD=1/2VDRM, RGK=1kΩ
V
✽2
✽3
—
100
3
µA
mA
°C/W
Tj=25°C, VD=6V, IT=0.1A
—
—
—
IH
Holding current
Tj=25°C, VD=12V, RGK=1kΩ
—
180
Rth (j-a)
Thermal resistance
Junction to ambient
✽2. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
A
B
C
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
✽3. IGT, VGT measurement circuit.
60Ω
A1
I
GS
IGT
TUT
A3
A2
6V
DC
3V
DC
V1
V
R
GK
1
2
GT
1kΩ
SWITCH
SWITCH 1 : IGT measurement
SWITCH 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
101
10
9
8
7
6
5
4
3
2
1
0
7
Ta = 25°C
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
GATE CHARACTERISTICS
102
7
TYPICAL EXAMPLE
7
5
5
3
2
3
2
V
FGM = 6V
PGM = 0.1W
101
7
102
7
5
3
2
5
3
2
P
G(AV) = 0.01W
V
GT = 0.8V
100
7
I
GT = 100µA
5
3
2
(T
j = 25°C)
101
7
5
3
2
10–1
7
5
V
GD = 0.2V
IFGM = 0.1A
3
2
10–2
100
10–22 3 5710–12 3 571002 3 571012 3 57102
GATE CURRENT (mA)
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
GATE CURRENT VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
200
1.0
TYPICAL EXAMPLE
GT (25°C)
180
160
140
120
100
80
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
DISTRIBUTION
TYPICAL EXAMPLE
I
# 1 32µA
# 2 9µA
# 1
# 2
60
40
See
3
20
0
–40–20 0 20 40 60 80 100120140160
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
200
0.8
180
160
140
120
100
80
0.7
0.6
180°
120°
0.5
90°
60°
0.4
θ = 30°
0.3
60
0.2
θ
40
360°
0.1
0
20
RESISTIVE, INDUCTIVE LOADS
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
0
0.1
0.2
0.3
0.4
TIME (s)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
0.8
140
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
180°
θ
120°
360°
120
100
80
60
40
20
0
90°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
60°
θ = 30°
θ
θ
360°
θ = 30° 60° 90° 120°
0.1 0.2
AVERAGE ON-STATE CURRENT (A)
180°
RESISTIVE LOADS
0.2 0.3 0.4 0.5
0
0.3
0.4
0
0.1
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
0.8
DC
140
0.7
θ
θ
270°
180°
0.6
360°
120
100
80
60
40
20
0
120°
RESISTIVE LOADS
NATURAL
CONVECTION
0.5
0.4
90°
60°
θ = 30°
0.3
θ
360°
0.2
0.1
0
RESISTIVE,
INDUCTIVE
LOADS
θ = 30°
60°
120°
90° 180°
0
0.1
0.2
0.3
0.4
0.5
0
0.1
0.2
0.3
0.4
0.5
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
160
140
120
100
80
NATURAL
CONVECTION
TYPICAL EXAMPLE
RGK = 1kΩ
140
θ
360°
120
100
80
60
40
20
0
RESISTIVE,
INDUCTIVE
LOADS
θ = 30°
60°
90°
120°
180°
270°
DC
60
40
20
0
0
0.1
0.2
0.3
0.4
0.5
–40–20 0 20 40 60 80 100120140160
AVERAGE ON-STATE CURRENT (A)
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
120
120
100
80
60
40
20
0
TYPICAL EXAMPLE
Tj = 125°C
100
80
60
40
20
0
# 2
# 1
TYPICAL EXAMPLE
# 1 IGT (25°C)=10µA
# 2 IGT (25°C)=66µA
Tj = 125°C, RGK = 1kΩ
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE TO CATHODE RESISTANCE (kΩ)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
HOLDING CURRENT VS.
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
GATE TO CATHODE RESISTANCE
102
500
7
5
TYPICAL EXAMPLE
T
j
= 25°C
I
GT (25°C) IH (1kΩ)
I
I
H
(25°C)=1mA
3
2
# 1 13µA
# 2 59µA
1.6mA
1.8mA
400
300
200
100
0
GT (25°C)=25µA
# 1
101
7
5
3
2
DISTRIBUTION
TYPICAL
# 2
EXAMPLE
100
7
5
3
2
Tj
= 25°C
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
GATE TO CATHODE RESISTANCE (kΩ)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
160
103
TYPICAL EXAMPLE
GT (25°C)
TYPICAL EXAMPLE
7
5
4
3
2
I
140
120
100
80
# 1
# 1 10µA
# 2 66µA
# 2
102
7
5
4
3
2
60
40
20
T
j
= 25°C
3 4 5 7 101
0
101
100
2
2
3 4 5 7 102
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
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