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CM75TU-12F_09

更新时间：2024-09-18 10:20:17
品牌：MITSUBISHI
描述：IGBT MODULES HIGH POWER SWITCHING USE

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CM75TU-12F_09 概述

IGBT MODULES HIGH POWER SWITCHING USE IGBT模块大功率开关使用

CM75TU-12F_09 数据手册

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MITSUBISHI IGBT MODULES  
CM75TU-12F  
HIGH POWER SWITCHING USE  
CM75TU-12F  
¡IC ..................................................................... 75A  
¡VCES ............................................................600V  
¡Insulated Type  
¡6-elements in a pack  
APPLICATION  
General purpose inverters & Servo controls, etc  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
102  
4–φ5.5  
MOUNTING HOLES  
0.25  
80  
(4)  
20  
10  
10  
CM  
P
N
GuN  
11  
19.1  
11  
19.1  
11 11.85  
EuN  
GvN  
EvN  
GwN  
EwN  
GuP  
EuP  
GvP  
EvP  
GwP  
EwP  
G
E
G
E
G
E
G
E
G
E
G
E
U
V
W
10  
10  
10  
+1  
20  
20  
5–M4NUTS  
Tc measured point  
2.8  
3.05  
Tc measured point  
29  
–0.5  
11 19.1 11  
19.1 11  
P
4
G
U
P
G
V
P
GWP  
RTC  
RTC  
RTC  
EU  
P
E
V
P
EWP  
W
U
V
LABEL  
G
U
N
G
V
N
GWN  
RTC  
RTC  
RTC  
EU  
N
E
V
N
EWN  
N
CIRCUIT DIAGRAM  
Feb. 2009  
MITSUBISHI IGBT MODULES  
CM75TU-12F  
HIGH POWER SWITCHING USE  
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)  
Symbol  
Parameter  
Collector-emitter voltage  
Gate-emitter voltage  
Conditions  
Ratings  
600  
Unit  
V
V
VCES  
VGES  
IC  
G-E Short  
C-E Short  
TC = 25°C  
Pulse  
20  
75  
A
Collector current  
Emitter current  
ICM  
(Note 2)  
(Note 2)  
150  
75  
IE  
(
Note 1  
)
)
)
TC = 25°C  
Pulse  
A
IEM (Note 1  
PC (Note 3  
Tj  
150  
290  
Maximum collector dissipation TC = 25°C  
Junction temperature  
W
°C  
°C  
Vrms  
N • m  
–40 ~ +150  
–40 ~ +125  
2500  
1.3 ~ 1.7  
2.5 ~ 3.5  
570  
Tstg  
Storage temperature  
Viso  
Isolation voltage  
Torque strength  
Weight  
Terminals to base plate, f = 60Hz, AC 1 minute  
Main terminals M4 screw  
Mounting M5 screw  
—
—
N • m  
g
Typical value  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Limits  
Typ.  
—
Symbol  
Parameter  
Test conditions  
VCE = VCES, VGE = 0V  
Unit  
mA  
Min.  
—
Max.  
1
Collector cutoff current  
ICES  
VGE(th)  
IGES  
Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V  
5
6
7
V
Gate leakage current  
VGE = VGES, VCE = 0V  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.3  
20  
2.2  
—
—
1.6  
1.6  
—
µA  
Tj = 25°C  
Tj = 125°C  
Collector-emitter saturation voltage IC = 75A, VGE = 15V  
Input capacitance  
V
VCE(sat)  
Cies  
Coes  
Cres  
QG  
20  
VCE = 10V  
Output capacitance  
—
1.4  
0.75  
—
nF  
nC  
VGE = 0V  
Reverse transfer capacitance  
—
Total gate charge  
VCC = 300V, IC = 75A, VGE = 15V  
465  
—
Turn-on delay time  
Turn-on rise time  
td(on)  
tr  
100  
80  
VCC = 300V, IC = 75A  
VGE = 15V  
RG = 8.3Ω, Inductive load  
IE = 75A  
—
—
ns  
Turn-off delay time  
Turn-off fall time  
td(off)  
tf  
300  
250  
150  
—
—
Reverse recovery time  
Reverse recovery charge  
Emitter-collector voltage  
ns  
µC  
V
trr  
(Note 1)  
—
Qrr (Note 1  
)
1.4  
—
VEC(Note 1  
Rth(j-c)Q  
Rth(j-c)R  
Rth(c-f)  
)
2.6  
0.43  
0.9  
—
IE = 75A, VGE = 0V  
IGBT part (1/6 module)  
—
—
Thermal resistance*1  
FWDi part (1/6 module)  
K/W  
Case to heat sink, Thermal compound applied*2 (1/6 module)  
Case temperature measured point is just under the chips  
Contact thermal resistance  
Thermal resistance  
0.11  
—
3
*
0.34  
83  
Rth(j-c’)Q  
RG  
—
Ω
External gate resistance  
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).  
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.  
3. Junction temperature (Tj) should not increase beyond 150°C.  
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.  
1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.  
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].  
3 : If you use this value, Rth(f-a) should be measured just under the chips.  
*
*
*
Feb. 2009  
2
MITSUBISHI IGBT MODULES  
CM75TU-12F  
HIGH POWER SWITCHING USE  
PERFORMANCE CURVES  
OUTPUT CHARACTERISTICS  
COLLECTOR-EMITTER SATURATION  
VOLTAGE CHARACTERISTICS  
(TYPICAL)  
(TYPICAL)  
150  
125  
100  
75  
3
2.5  
2
15  
11  
VGE = 15V  
Tj=25°C  
10  
VGE=20V  
9.5  
9
1.5  
1
8.5  
50  
8
T
T
j
j
= 25°C  
25  
0.5  
0
= 125°C  
7.5  
0
0
0
50  
100  
150  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
COLLECTOR-EMITTER VOLTAGE VCE (V)  
COLLECTOR CURRENT IC (A)  
COLLECTOR-EMITTER SATURATION  
FREE-WHEEL DIODE  
FORWARD CHARACTERISTICS  
(TYPICAL)  
VOLTAGE CHARACTERISTICS  
(TYPICAL)  
103  
7
5
5
Tj = 25°C  
Tj  
= 25°C  
3
2
4
3
2
1
0
102  
7
5
3
2
I
C
= 150A  
I
C
= 75A  
101  
7
5
I
C
= 30A  
3
2
100  
6
8
10 12 14 16 18 20  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
GATE-EMITTER VOLTAGE VGE (V)  
EMITTER-COLLECTOR VOLTAGE VEC (V)  
CAPACITANCE–VCE  
CHARACTERISTICS  
(TYPICAL)  
HALF-BRIDGE  
SWITCHING CHARACTERISTICS  
(TYPICAL)  
103  
102  
7
7
5
5
td(off)  
3
2
3
2
Cies  
tf  
102  
7
5
101  
7
5
td(on)  
3
2
3
2
Conditions:  
101  
100  
7
V
CC = 300V  
15V  
= 8.3Ω  
= 125°C  
tr  
7
Coes  
5
5
VGE  
=
R
G
j
Cres  
3
2
3
2
T
VGE = 0V  
10–1  
100  
10–1  
2
3
5 7100  
2
3
5 7101  
2
3
5 7102  
100  
2
3
5 7101  
2
3
5 7102  
2
3
5 7103  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
COLLECTOR CURRENT I  
C (A)  
Feb. 2009  
3
MITSUBISHI IGBT MODULES  
CM75TU-12F  
HIGH POWER SWITCHING USE  
REVERSE RECOVERY CHARACTERISTICS  
OF FREE-WHEEL DIODE  
(TYPICAL)  
TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(IGBT part & FWDi part)  
10–32 3 5710–22 3 5710–12 3 57100 2 3 57101  
102  
7
5
101  
7
IGBT part:  
5
Per unit base = Rth(j–c) = 0.43Κ/W  
FWDi part:  
3
2
Per unit base = Rth(j–c) = 0.90Κ/W  
100  
t
rr  
3
2
7
5
Irr  
3
3
2
2
10–1  
101  
7
10–1  
7
5
7
5
3
3
5
2
2
Conditions:  
10–2  
10–2  
3
2
V
V
CC = 300V  
GE 15V  
7
5
7
5
=
Single Pulse  
TC = 25°C  
RG = 8.3Ω  
3
3
2
2
Tj  
= 25°C  
10–3  
10–3  
100  
100  
2
3
5
7
101  
2
3
5
7
102  
10–52 3 5710–42 3 5710–3  
EMITTER CURRENT I  
E
(A)  
TIME (s)  
GATE CHARGE  
CHARACTERISTICS  
(TYPICAL)  
20  
18  
16  
14  
12  
10  
8
IC  
= 75A  
V
CC = 200V  
VCC = 300V  
6
4
2
0
0
100 200 300 400 500 600 700  
GATE CHARGE Q (nC)  
G
Feb. 2009  
4

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