CM600DU-12NFH [MITSUBISHI]
HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
| 型号： | CM600DU-12NFH |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 文件： | 总8页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
- 5th generation Fast switching IGBT module -
CM600DU-12NFH
Collector current IC .............…............…
Collector-emitter voltage VCES ...........…
Maximum junction temperature Tjmax ...
●Flat base Type
A
6 0 0
6 0 0
1 5 0
V
°C
●Copper base plate
●RoHS Directive compliant
●UL Recognized under UL1557, File E323585
Dual (Half-Bridge)
APPLICATION
High freqency (30 kHz ~ 60 kHz) switching use:
Gradient anplifier, Induction heating, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension Tolerance
Di1
0.5 to
3
6
±0.2
±0.3
±0.5
±0.8
±1.2
Tr2
over
over
3
6
to
Tr1
to 30
E2
C2E1
C1
over 30 to 120
over 120 to 400
Di2
February-2011
1
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Symbol
Item
Collector-emitter voltage
Gate-emitter voltage
Conditions
Rating
600
Unit
V
VCES
G-E short-circuited
C-E short-circuited
VGES
IC
±20
V
600
(Note.5)
Operation
Collector current
A
W
A
IC(rms)
ICRM
Ptot
400
(Note.4)
Pulse, Repetitive
1200
(Note.2, 5)
TC=25 °C
1130
Total power dissipation
(Note.3, 5)
Ptot
IE
'
TC'=25 °C
2350
(Note.1)
(Note.1)
(Note.1)
600
(Note.5)
Operation
Emitter current
(Free wheeling diode forward current)
IE(rms)
IERM
Tj
400
(Note.4)
Pulse, Repetitive
1200
Junction temperature
Storage temperature
Isolation voltage
-
-
-40 ~ +150
-40 ~ +125
2500
°C
V
Ts t g
Vi s o l
Terminals to base plate, RMS, f=60 Hz, AC 1 min
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
Limits
Symbol
Item
Conditions
Unit
Min.
Typ.
Max.
1
ICES
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
VCE=VCES, G-E short-circuited
±VGE=VGES, C-E short-circuited
-
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mA
μA
V
IGES
-
6
0.5
7
VGE(th)
IC=60 mA, VCE=10 V
(Note.6)
IC=600 A
GE=15 V
,
Tj =25 °C
2.0
1.95
-
2.7
-
VCEsat
Collector-emitter saturation voltage
V
V
Tj =125 °C
Ci e s
Co e s
Cr e s
QG
Input capacitance
166
11
6.0
-
VCE=10 V, G-E short-circuited
nF
nC
Output capacitance
-
Reverse transfer capacitance
Gate charge
-
VCC=300 V, IC=600 A, VGE=15 V
3720
-
td ( o n )
tr
td ( o f f )
tf
Turn-on delay time
650
250
800
150
2.6
200
-
VCC=300 V, IC=600 A, VGE=±15 V,
Rise time
-
ns
Turn-off delay time
-
RG=2.0 Ω, Inductive load
Fall time
-
(Note.1)
VEC
trr
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
IE=600 A (Note.6) , G-E short-circuited
VCC=300 V, IE=600 A, VGE=±15 V,
RG=2.0 Ω, Inductive load
VCC=300 V, IC=IE=600 A,
VGE=±15 V, RG=2.0 Ω, Tj =125 °C,
Inductive load
2.0
-
V
(Note.1)
(Note.1)
ns
μC
Qrr
Eon
Eoff
Err
rg
11
11
27
6.3
0.8
-
mJ
-
(Note.1)
-
Per switch, TC=25 °C
-
Ω
THERMAL RESISTANCE CHARACTERISTICS
Limits
Symbol
Item
Conditions
Unit
Min.
Typ.
Max.
0.11
0.12
Rth(j-c)Q
Rth(j-c)D
Junction to case, per IGBT
-
-
-
-
K/W
K/W
(Note.2)
Thermal resistance
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
Thermal grease applied
(Note.2)
Rth(c-s)
Contact thermal resistance
-
0.02
-
K/W
(Note.7)
Rth(j-c')Q
Rth(j-c')D
Junction to case, per IGBT
Junction to case, per FWDi
-
-
-
-
53
78
K/kW
K/kW
(Note.3)
Thermal resistance
MECHANICAL CHARACTERISTICS
Limits
Typ.
4.0
Symbol
Item
Conditions
Unit
N·m
Min.
3.5
3.5
-
Max.
4.5
4.5
-
Mt
Main terminals
Mounting to heat sink
-
M 6 screw
M 6 screw
Mounting torque
Weight
Ms
m
4.0
580
-
g
(Note.8)
ec
Flatness of base plate
On the centerline X, Y
-100
+100
μm
February-2011
2
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS (Ta=25 °C)
Limits
Unit
Symbol
Item
Conditions
Min.
-
Typ.
300
15.0
-
Max.
400
16.5
10
VCC
(DC) Supply voltage
Applied across C1-E2
V
VGEon
RG
Gate (-emitter drive) voltage
External gate resistance
Applied across G1-Es1/G2-Es2
Per switch
13.5
1.0
Ω
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (TC) measured point is base plate side. (Refer to the figure of chip location)
Note.3: Case temperature (TC ') and heat sink temperature (Ts ') are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {Rth(s-a)} should measure just under the chips.
Note.4: Pulse width and repetition rate should be such that the device junction temperature (Tj ) dose not exceed Tj m a x rating.
Note.5: Junction temperature (Tj ) should not increase beyond Tj m a x rating.
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: Base plate flatness measurement points are as in the following figure.
bottom
X
3 mm
Y
bottom
-:Concave
+:Convex
bottom
Note.9: No short circuit capability is designed.
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Case Temperature (TC)
measurement point
(Base plate side)
Tr1/Tr2: IGBT, Di1/Di2: FWDi
February-2011
3
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
C1
C1
C1
C1
Short-
circuited
Short-
circuited
Short-
circuited
VGE=15 V
G1
G1
IC
IE
G1
G1
V
V
Es1
Es1
Es1
Es1
V
V
C2E1
E2
C2E1
E2
C2E1
E2
C2E1
E2
Short-
circuited
VGE=15 V
Short-
circuited
Short-
circuited
IC
IE
G2
G2
G2
G2
Es2
Es2
Es2
Es2
Tr1
Tr2
Di1
Di2
VCEsat test circuit
VEC test circuit
vGE
iE
90 %
iE
Qrr=0.5×Irr×trr
trr
0 V
0
t
Load
-VGE
IE
+
VCC
iC
0 A
t
90 %
RG
vGE
Irr
+VGE
-VGE
0.5×Irr
vCE
0 V
iC
10%
tf
0 A
td (o n)
tr
t
td( o ff)
Switching characteristics test circuit and waveforms
trr, Qrr test waveform
IEM
iE
vEC
iC
iC
ICM
ICM
VCC
vCE
vCE
VCC
VCC
t
t
0 A
0 V
0.1×VCC
0.1×ICM
0.02×ICM
0.1×VCC
0
t
t
0
ti
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
February-2011
4
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj=25 °C
VGE=20 V
15 V
VGE=15 V
13 V 11 V 10 V 9.5 V
1200
1000
800
600
400
200
0
3
2.5
2
9 V
8.5
Tj=125 °C
8 V
1.5
Tj=25 °C
7.5
1
0.5
7 V
0
0
1
2
3
4
5
0
200
400
600
800
1000
1200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
Tj=25 °C
G-E short-circuited , Tj=25 °C
5
4.5
4
10000
1000
100
IC=1200 A
IC=600 A
3.5
3
Tj=125 °C
IC=240 A
2.5
2
Tj=25 °C
1.5
1
0.5
0
10
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
February-2011
5
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=2.0 Ω,
V
CC=300 V, IC=600 A, VGE=±15 V,
Tj=125 °C, INDUCTIVE LOAD
Tj=125 °C, INDUCTIVE LOAD
1000
10000
td(off)
td(on)
td(off)
100
1000
tf
td(on)
tr
tr
tf
10
100
10
100
1000
0.1
1
10
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=2.0 Ω, Tj=125 °C,
VCC=300 V, IC/IE=600 A, VGE=±15 V, Tj=125 °C,
INDUCTIVE LOAD, PER PULSE
INDUCTIVE LOAD, PER PULSE
100
100
Eo f f
Eo f f
Eo n
10
10
Er r
Er r
Eo n
1
1
10
100
1000
0.1
1
10
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
EXTERNAL GATE RESISTANCE RG (Ω)
February-2011
6
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=2.0 Ω,
Tj=25 °C, INDUCTIVE LOAD
G-E short-circuited, Tj=25 °C
1000
100
10
1000
100
10
Ci e s
Ir r
tr r
Co e s
Cr e s
1
10
100
1000
0.1
1
10
100
EMITTER CURRENT IE (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
GATE CHARGE CHARACTERISTICS
(TYPICAL)
(MAXIMUM)
IC=600 A, Tj=25 °C
Single pulse, TC'=25°C
20
1
18
16
14
12
10
8
VC C =200 V
0.1
VC C =300 V
0.01
6
4
2
0.001
0.00001
0
0.0001
0.001
0.01
0.1
1
10
0
1000
2000
3000
4000
5000
Rth(j-c')Q=53 K/kW, Rth(j-c')D=78 K/kW
GATE CHARGE QG (nC)
TIME (S)
February-2011
7
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
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February-2011
8
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