CM450DX-24A [MITSUBISHI]
IGBT MODULES HIGH POWER SWITCHING USE; IGBT模块大功率开关使用
| 型号： | CM450DX-24A |
| 厂家： | 
Mitsubishi Group |
| 描述： | IGBT MODULES HIGH POWER SWITCHING USE |
| 文件： | 总7页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
CM450DX-24A
¡IC ...................................................................450A
¡VCES ......................................................... 1200V
¡Dual
¡Flatbase Type / Insulated Package /
Copper (non-plating) base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers, Power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
152
137
121.7
(13.5)
(13.5)
0.5
110
99
(20.5)
17
94.5
4-M6 NUTS
7
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47
48
24
23
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
(3)
6.5
A
4-φ5.5 MOUNTING HOLES
(21.14)
13
L A B E L
CIRCUIT DIAGRAM
E2(39) G2(38)
Tolerance otherwise specified
φ4.3
Division of Dimension
Tolerance
φ2.5
φ2.1
Tr2
E1C2
(24)
E2(47)
C1(48)
0.5 to
3
6
0.2
(7.4)
1.2
Di2
over
over
3
6
to
to
0.3
E1C2
(23)
30
0.5
Di1
Tr1
over 30 to 120
over 120 to 400
0.8
TERMINAL t = 0.8
(S = 3/1)
1.2
Th
NTC
SECTION A
(S = 3/1)
φ0.5
＊Pin positions with tolerance
G1(15)
C1(22)
E1(16)
TH1(1)
TH2(2)
Jul. 2009
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (T
INVERTER PART
j
= 25°C, unless otherwise specified)
Symbol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Conditions
G-E Short
Rating
1200
Unit
V
VCES
C-E Short
20
VGES
(Note. 1)
(Note. 4)
DC, T
Pulse
C
= 90°C
450
I
C
Collector current
A
900
ICRM
(Note. 1, 5)
(Note. 1, 5)
(Note. 4)
Maximum collector dissipation
Emitter current
(Note.3)
T
T
C
= 25°C
= 25°C
2840
W
A
P
C
C
450
IE
(Free wheeling diode forward current) Pulse
Junction temperature
900
I
ERM (Note.3)
–40 ~ +150
–40 ~ +125
2500
Tj
°C
Storage temperature
Tstg
Isolation voltage
Base plate flatness
Torque strength
Torque strength
Weight
Terminals to base plate, f = 60Hz, AC 1 minute
Vrms
Viso
—
(Note. 8)
On the centerline X, Y
Main terminals
Mounting
0 ~ +100
3.5 ~ 4.5
2.5 ~ 3.5
330
µm
—
—
—
M6 screw
M5 screw
N·m
g
(Typical)
Note. 8: Base plate flatness measurement point is as in the following figure.
Y
+：convex
–：concave
X
–
+
Heat sink side
Jul. 2009
2
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Limits
Unit
Symbol
Parameter
Conditions
Min.
—
6
Typ.
—
Max.
1
I
CES
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
V
CE = VCES, VGE = 0V
= 45mA, VCE = 10V
mA
V
VGE(th)
IC
7
8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
GES
µA
V
GE = VGES, VCE = 0V
—
0.5
2.6
—
T
T
j
j
= 25°C
= 125°C
2.0
2.2
1.9
—
I
C
C
= 450A, VGE = 15V
= 450A, VGE = 15V
(Note. 6)
VCE(sat)
Collector-emitter saturation voltage
V
Chip
I
—
C
C
C
ies
Input capacitance
68
V
CE = 10V
GE = 0V
oes
res
nF
nC
Output capacitance
Reverse transfer capacitance
Total gate charge
—
5.9
1.4
—
V
—
QG
V
V
V
CC = 600V, I
C
C
= 450A, VGE = 15V
= 450A
= 0.68Ω
2000
—
t
t
t
t
t
d(on)
Turn-on delay time
Turn-on rise time
CC = 600V, I
650
250
700
600
250
—
r
GE
=
15V, R
G
—
d(off)
Turn-off delay time
Turn-off fall time
Inductive load
—
ns
f
—
rr (Note.3)
Reverse recovery time
Reverse recovery charge
—
(IE = 450A)
Qrr (Note.3)
14
2.6
2.5
0.8
—
µC
(Note. 6)
(Note. 2)
I
I
E
= 450A, VGE = 0V
3.4
—
VEC(Note.3)
V
Emitter-collector voltage
E
= 450A, VGE = 0V, chip
R
R
R
lead
Module lead resistance
Thermal resistance
Main terminals-chip, per switch
per IGBT
—
mΩ
th(j-c)Q
th(j-c)R
0.044
0.078
(Junction to case)
Contact thermal resistance
(Case to heat sink) (Note. 1) per 1 module
(Note. 1) per free wheeling diode
—
K/W
Thermal grease applied
—
Rth(c-f)
0.015
—
1.4
2.8
2.0
3.0
—
2.6
5.2
6.8
T
T
C
C
= 25°C
= 125°C
R
Gint
G
Internal gate resistance
External gate resistance
per switch
Ω
0.68
R
NTC THERMISTOR PART
Symbol Parameter
Limits
Typ.
5.00
—
Conditions
Unit
Min.
4.85
–7.3
—
Max.
5.15
+7.8
—
R
Zero power resistance
Deviation of resistance
B constant
T
T
C
C
= 25°C
= 100°C, R100 = 493Ω
Approximate by equation
= 25°C
kΩ
%
∆R/R
B(25/50)
(Note. 7)
3375
—
K
—
P25
Power dissipation
T
C
10
mW
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
(25/50) = In( 25 )/(
)
T50
R
1
1
7:
B
R
50
T
25
R
R
25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K]
50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K]
Jul. 2009
3
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
Chip Location (Top view)
Dimensions in mm (Tolerance: 1mm)
(152)
(121.7)
(110)
0
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47
48
24
23
26.6
43.9
D i 2
T r 1
D i 2
T r 1
D i 2
T r 1
28.2
T r 2
D i 1
T r 2
D i 1
T r 2
D i 1
42.0
51.6
Th
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
LABEL SIDE
Each mark points the center position of each chip. Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor
Jul. 2009
4
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
C1
C1
C1(C1s)
G1
C1(C1s)
VGE = 15V
VGE = 0V
V
IC
G1
E1(E1s)
E1(E1s)
E1C2
E1C2
E2
VGE = 0V
VGE = 15V
V
IC
G2
G2
E2(E2s)
E2(E2s)
E2
Tr
1
Tr2
V
CE(sat) test circuit
C1
C1
C1(C1s)
G1
C1(C1s)
G1
VGE = 0V
VGE = 0V
V
IE
E1(E1s)
E1(E1s)
E1C2
E1C2
E2
VGE = 0V
VGE = 0V
V
IE
G2
G2
E2(E2s)
E2(E2s)
E2
Di
1
Di2
V
EC test circuit
IE
V
GE
90%
0%
I
E
Arm
0V
t
t
rr
Load
–
VGE
+
VCC
I
C
0A
t
90%
+
V
GE
GE
R
G
V
CE
0V
1/2
✕ Irr
I
rr
VGE
I
C
10%
–
V
0A
Q
rr = 1/2
✕
Irr ✕ trr
t
t
f
t
r
t
d(on)
td(off)
Switching time test circuit and waveforms
t
rr,
Q
rr test waveform
Jul. 2009
5
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
OUTPUT CHARACTERISTICS
(TYPICAL) Inverter part
900
800
700
600
500
400
300
200
100
0
4
3.5
3
15
T
j
= 25°C
V
GE = 15V
V
GE =
20V
13
12
11
2.5
2
1.5
1
10
9
T
T
j
j
= 25°C
0.5
0
= 125°C
0
1
2
3
4
5
6
7
8
9
10
0
100 200 300 400 500 600 700 800 900
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
C
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
10
8
103
7
T
j
= 25°C
5
3
2
6
102
7
I
I
C
C
= 450A
= 900A
4
5
3
2
2
T
T
j
j
= 25°C
I
C
= 180A
= 125°C
101
0
6
8
10 12 14 16 18 20
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
103
7
103
7
t
d(off)
5
5
t
d(on)
3
2
3
2
t
f
102
7
C
ies
102
7
5
5
3
2
101
7
C
oes
3
2
t
r
5
Conditions:
3
101
7
2
V
CC = 600V
15V
= 0.68Ω
= 125°C
Inductive load
100
7
VGE
=
5
C
res
RG
5
3
2
3
Tj
2
V
GE = 0V
10–1
100
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
101
2
3
5
7
102
2
3
5
7
103
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I
C
(A)
Jul. 2009
6
MITSUBISHI IGBT MODULES
CM450DX-24A
HIGH POWER SWITCHING USE
HALF-BRIDGE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
103
7
102
7
t
d(on)
t
d(off)
5
5
3
2
3
2
t
t
f
E
rr
r
E
E
off
on
102
7
101
7
Conditions:
Conditions:
5
5
V
V
CC = 600V
15V
V
V
RG
Tj
CC = 600V
15V
= 0.68Ω
= 125°C
Inductive load
GE
=
GE =
3
2
3
2
IC
= 450A
T
j
= 125°C
Inductive load
101
100
10–1
2
3
5
7
100
2
3
5
7
101
101
2
3
5
7
102
2
3
5
7
103
GATE RESISTANCE R
G
(Ω)
COLLECTOR CURRENT I
EMITTER CURRENT I
C
(A)
(A)
E
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
103
7
103
7
5
5
3
2
3
2
I
rr
rr
102
102
7
5
E
E
on
off
t
7
5
3
2
3
2
E
rr
Conditions:
Conditions:
101
101
7
5
V
CC = 600V
15V
= 0.68Ω
= 25°C
Inductive load
103
V
V
CC = 600V
15V
= 450A
= 125°C
7
5
VGE
=
GE
=
RG
IC, IE
3
2
3
2
Tj
Tj
Inductive load
100
100
10–1
2
3
5
7
100
2
3
5
7
101
101
2
3
5
7
102
2
3
5 7
GATE RESISTANCE R
G
(Ω)
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
100
7
20
15
10
5
IC = 450A
Single pulse
TC = 25°C
V
CC = 400V
5
3
2
V
CC = 600V
10–1
7
5
3
2
10–2
7
5
3
2
Inverter IGBT part : Per unit base = Rth(j–c) = 0.044K/W
Inverter FWDi part : Per unit base = Rth(j–c) = 0.078K/W
10–3
0
0
500 1000 1500 2000 2500 3000
GATE CHARGE Q (nC)
10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101
G
TIME (s)
Jul. 2009
7
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