CM300DU-12F [MITSUBISHI]
HIGH POWER SWITCHING USE; 高功率开关使用
| 型号： | CM300DU-12F |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE |
| 文件： | 总4页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
CM300DU-12F
¡IC ...................................................................300A
¡VCES ............................................................600V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Tc measured point
108
±0.25
93
14
14
14
RTC
C2E1
E2
C1
RTC
CM
CIRCUIT DIAGRAM
C2E1
E2
C1
25
3-M6 NUTS
4-φ6. 5 MOUNTING HOLES
25
7
21.5
2.5
2.8
4
0.5
0.5
0.5
18
7
18
18
0.5
LABEL
Aug. 1999
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Conditions
Ratings
600
Unit
V
VCES
VGES
IC
G-E Short
C-E Short
TC = 25°C
Pulse
±20
V
300
A
Collector current
Emitter current
600
ICM
(Note 2)
(Note 2)
300
IE
(
Note 1
)
)
)
TC = 25°C
Pulse
A
600
IEM (Note 1
PC (Note 3
Tj
Maximum collector dissipation TC = 25°C
Junction temperature
780
W
°C
°C
–40 ~ +150
–40 ~ +125
2500
Tstg
Storage temperature
Viso
Isolation voltage
Torque strength
Weight
Main terminal to base plate, AC 1 min.
Main Terminal M6
V
3.5 ~ 4.5
3.5 ~ 4.5
400
N • m
N • m
g
—
—
Mounting holes M6
Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Limits
Typ.
—
Parameter
Test conditions
VCE = VCES, VGE = 0V
Symbol
ICES
Unit
mA
V
Min.
—
Max.
1
Collector cutoff current
Gate-emitter threshold voltage IC = 30mA, VCE = 10V
6
VGE(th)
IGES
5
7
Gate leakage current
VGE = VCES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
—
1.6
1.6
—
40
2.2
—
µA
V
Tj = 25°C
VCE(sat)
Collector-emitter saturation voltage
IC = 300A, VGE = 15V
Tj = 125°C
Input capacitance
81
Cies
Coes
Cres
QG
td(on)
tr
VCE = 10V
VGE = 0V
Output capacitance
Reverse transfer capacitance
Total gate charge
—
5.4
3.0
—
nF
nC
—
VCC = 300V, IC = 300A, VGE = 15V
1860
—
Turn-on delay time
250
120
500
250
150
—
Turn-on rise time
—
VCC = 300V, IC = 300A
VGE1 = VGE2 = 15V
ns
Turn-off delay time
td(off)
tf
—
Turn-off fall time
RG = 2.1Ω, Inductive load switching operation
IE = 300A
—
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
ns
µC
V
trr
(
Note 1
)
—
Qrr (Note 1
VEC(Note 1
Rth(j-c)Q
Rth(j-c)R
)
5.2
—
)
2.6
0.16
0.24
—
IE = 300A, VGE = 0V
IGBT part (1/2 module)
—
Thermal resistance*1
FWDi part (1/2 module)
—
°C/W
Contact thermal resistance
Thermal resistance
0.04
—
Rth(c-f)
Rth(j-c’)Q
RG
Case to fin, Thermal compoundapplied*2 (1/2 module)
Tc measured point is just under the chips
0.10✽3
—
Ω
External gate resistance
21
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, Rth(f-a) should be measured just under the chips.
*
Aug. 1999
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
(TYPICAL)
3
2.5
2
600
500
400
300
200
100
0
15
11
V
GE = 15V
Tj=25°C
10
V
GE=20V
9.5
9
1.5
1
8.5
8
T
T
j
j
= 25°C
= 125°C
0.5
0
7.5
0
0
200
400
600
0.5
1
1.5
2
2.5
3
3.5
4
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
VOLTAGE CHARACTERISTICS
(TYPICAL)
103
7
5
Tj = 25°C
Tj = 25°C
5
4
3
2
1
0
3
2
102
7
I
I
C
C
= 600A
= 300A
5
3
2
I
C
= 120A
101
6
8
10 12 14 16 18 20
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
102
7
5
C
ies
7
5
t
t
d(off)
d(on)
3
2
3
2
t
f
102
7
5
101
7
5
3
2
3
2
Coes
t
r
Conditions:
101
7
5
100
7
5
Cres
V
CC = 300V
VGE = ±15V
R
G
= 2.1Ω
3
2
3
2
VGE = 0V
T
j = 125°C
10–1
100
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
COLLECTOR-EMITTER VOLTAGE VCE (V)
100
2
3
5 7101 2 3 5 7102 2 3 5 7103
COLLECTOR CURRENT IC (A)
Aug. 1999
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10–32 3 5710–22 3 5710–12 3 57100 2 3 57101
103
7
5
101
7
IGBT part:
5
Per unit base = Rth(j–c) = 0.16°C/W
FWDi part:
3
2
Per unit base = Rth(j–c) = 0.24°C/W
100
3
2
7
5
3
2
3
2
t
I
rr
rr
10–1
102
7
10–1
7
5
7
5
3
3
5
2
2
Conditions:
10–2
10–2
3
2
V
CC = 300V
7
5
7
5
VGE = ±15V
Single Pulse
TC = 25°C
3
2
3
2
10–3
RG
= 2.1Ω
T
j = 25°C
10–3
101
101
2
3
5
7
102
2
3
5
7
103
10–52 3 5710–42 3 5710–3
EMITTER CURRENT I
E
(A)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
18
16
14
12
10
8
IC = 300A
V
CC = 200V
V
CC = 300V
6
4
2
0
0
500
1000 1500 2000 2500
(nC)
GATE CHARGE Q
G
Aug. 1999
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