首页 |元器件品牌

CM2400HC-34H_05 [MITSUBISHI]

HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
CM2400HC-34H_05
型号： CM2400HC-34H_05
厂家： Mitsubishi Group    Mitsubishi Group
描述：

HIGH POWER SWITCHING USE INSULATED TYPE
大功率开关使用绝缘型

开关 高功率电源
文件： 总6页 (文件大小：67K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
MITSUBISHI HVIGBT MODULES  
CM2400HC-34H  
HIGH POWER SWITCHING USE  
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CM2400HC-34H  
● IC................................................................ 2400A  
● VCES ....................................................... 1700V  
● Insulated Type  
● 1-element in a Pack  
● AISiC Baseplate  
● Soft Reverse Recovery Diode  
APPLICATION  
Traction drives, High Reliability Converters / Inverters, DC choppers  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
190±0.5  
171±0.1  
57±0.1  
C
E
C
E
C
E
6 - M8 NUTS  
57±0.1  
57±0.1  
C
G
E
C
C
C
CM  
E
E
E
CIRCUIT DIAGRAM  
C
E
G
20.25±0.2  
41.25±0.3  
±0.1  
8 - φ7  
MOUNTING HOLES  
3 - M4 NUTS  
79.4±0.3  
screwing depth  
min. 16.5  
±0.2  
15  
±0.3  
61.5±0.3  
±0.2  
61.5  
±0.3  
40  
screwing depth  
min. 7.7  
13  
±0.2  
5.2  
LABEL  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  
MITSUBISHI HVIGBT MODULES  
CM2400HC-34H  
HIGH POWER SWITCHING USE  
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
MAXIMUM RATINGS  
Symbol  
VCES  
Item  
Conditions  
Ratings  
1700  
Unit  
V
Collector-emitter voltage  
Gate-emitter voltage  
VGE = 0V, Tj = 25°C  
VCE = 0V, Tj = 25°C  
TC = 80°C  
±20  
VGES  
V
2400  
IC  
A
Collector current  
Emitter current  
4800  
ICM  
Pulse  
(Note 1)  
(Note 1)  
A
2400  
IE (Note 2)  
IEM (Note 2)  
A
4800  
Pulse  
A
17800  
PC (Note 3) Maximum power dissipation  
TC = 25°C, IGBT part  
W
°C  
°C  
°C  
V
–40 ~ +150  
–40 ~ +125  
–40 ~ +125  
4000  
Tj  
Junction temperature  
Operating temperature  
Storage temperature  
Isolation voltage  
Top  
Tstg  
Viso  
RMS, sinusoidal, f = 60Hz, t = 1min.  
VCC = 1150V, VCES ≤ 1700V, VGE = 15V  
Tj = 125°C  
Maximum short circuit pulse  
width  
10  
tpsc  
µs  
ELECTRICAL CHARACTERISTICS  
Limits  
Typ  
—
Symbol  
Item  
Conditions  
Unit  
mA  
Min  
—
Max  
36  
Collector cut-off current  
Gate-emitter  
VCE = VCES, VGE = 0V, Tj = 25°C  
ICES  
VGE(th)  
IGES  
IC = 240mA, VCE = 10V, Tj = 25°C  
4.5  
5.5  
6.5  
V
threshold voltage  
Gate leakage current  
Collector-emitter  
—
2.60  
3.10  
210  
30.0  
10.1  
19.8  
2.30  
1.85  
—
0.5  
3.30  
—
VGE = VGES, VCE = 0V, Tj = 25°C  
IC = 2400A, VGE = 15V, Tj = 25°C  
IC = 2400A, VGE = 15V, Tj = 125°C  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
µA  
(Note 4)  
(Note 4)  
VCE(sat)  
V
saturation voltage  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Total gate charge  
Cies  
Coes  
Cres  
Qg  
—
nF  
nF  
nF  
µC  
VCE = 10V, f = 100kHz  
—
VGE = 0V, Tj = 25°C  
—
—
VCC = 850V, IC = 2400A, VGE = 15V, Tj = 25°C  
IE = 2400A, VGE = 0V, Tj = 25°C  
IE = 2400A, VGE = 0V, Tj = 125°C  
VCC = 850V, IC = 2400A, VGE = ±15V  
RG(on) = 0.27Ω, Tj = 125°C, Ls = 80nH  
Inductive load  
3.00  
—
(Note 4)  
(Note 4)  
VEC(Note 2) Emitter-collector voltage  
V
td(on)  
tr  
1.60  
1.30  
—
Turn-on delay time  
µs  
µs  
—
Turn-on rise time  
Eon  
810  
—
Turn-on switching energy  
Turn-off delay time  
mJ/pulse  
µs  
td(off)  
tf  
2.70  
0.80  
—
VCC = 850V, IC = 2400A, VGE = ±15V  
RG(off) = 0.27Ω, Tj = 125°C, Ls = 80nH  
Inductive load  
—
Turn-off fall time  
µs  
Eoff  
870  
—
Turn-off switching energy  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery energy  
mJ/pulse  
µs  
trr (Note 2)  
Qrr (Note 2)  
Erec(Note 2)  
2.70  
—
VCC = 850V, IC = 2400A, VGE = ±15V  
RG(on) = 0.27Ω, Tj = 125°C, Ls = 80nH  
Inductive load  
630  
330  
µC  
—
mJ/pulse  
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).  
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).  
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).  
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  
MITSUBISHI HVIGBT MODULES  
CM2400HC-34H  
HIGH POWER SWITCHING USE  
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
THERMAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Item  
Conditions  
Junction to Case, IGBT part  
Min  
—
Typ  
—
Max  
7.0  
Rth(j-c)Q  
Rth(j-c)R  
Rth(c-f)  
K/kW  
K/kW  
K/kW  
Thermal resistance  
—
—
Junction to Case, FWDi part  
12.0  
—
—
Case to Fin, λgrease = 1W/m·K  
6.0  
Contact thermal resistance  
MECHANICAL CHARACTERISTICS  
Limits  
Symbol  
Item  
Conditions  
Unit  
Min  
7.0  
3.0  
1.0  
—
Typ  
—
Max  
13.0  
6.0  
2.0  
—
M8 : Main terminals screw  
M6 : Mounting screw  
—
M
Mounting torque  
N·m  
—
M4 : Auxiliary terminals screw  
—
Mass  
1.5  
—
—
—
kg  
—
—
CTI  
Comparative tracking index  
Clearance distance in air  
Creepage distance along surface  
Internal inductance  
600  
19.5  
32.0  
—
—
d
d
L
a
mm  
mm  
nH  
—
s
—
C-E(int)  
IGBT part  
10  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  
MITSUBISHI HVIGBT MODULES  
CM2400HC-34H  
HIGH POWER SWITCHING USE  
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
PERFORMANCE CURVES  
OUTPUT CHARACTERISTICS  
TRANSFER CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
4800  
4000  
3200  
2400  
1600  
800  
4800  
4000  
3200  
2400  
1600  
800  
Tj  
= 25°C  
VCE = 10V  
V
GE = 15V  
GE = 12V  
V
GE = 20V  
V
V
GE = 10V  
V
GE = 8V  
T
T
j
j
= 25°C  
= 125°C  
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10  
12  
( )  
( )  
COLLECTOR-EMITTER VOLTAGE V  
GATE-EMITTER VOLTAGE V  
COLLECTOR-EMITTER SATURATION  
VOLTAGE CHARACTERISTICS  
FREE-WHEEL DIODE  
FORWARD CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
5
4
3
2
1
0
5
4
3
2
1
0
V
GE = 15V  
T
T
j
j
= 25°C  
= 125°C  
T
T
j
j
= 25°C  
= 125°C  
0
800  
1600 2400 3200 4000 4800  
0
800  
1600 2400 3200 4000 4800  
( )  
COLLECTOR CURRENT A  
( )  
EMITTER CURRENT A  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  
MITSUBISHI HVIGBT MODULES  
CM2400HC-34H  
HIGH POWER SWITCHING USE  
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CAPACITANCE CHARACTERISTICS  
GATE CHARGE CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
103  
7
20  
16  
12  
8
VCC = 850V, IC = 2400A  
Tj = 25°C  
5
3
2
Cies  
102  
7
5
3
2
Coes  
Cres  
101  
7
5
4
3
2
VGE = 0V, Tj = 25°C  
f = 100kHz  
100  
0
10-1  
10  
10  
0
5
10  
15  
20  
25  
0
1
2
2
3
5 7  
2
3
5 7  
2
3
5 7  
10  
( )  
(
)
COLLECTOR-EMITTER VOLTAGE V  
GATE CHARGE µC  
HALF-BRIDGE  
HALF-BRIDGE  
SWITCHING ENERGY CHARACTERISTICS  
SWITCHING ENERGY CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
2500  
2000  
1500  
1000  
500  
5000  
4000  
3000  
2000  
1000  
0
VCC = 850V, VGE = ±15V  
RG(on) = RG(off) = 0.27Ω  
Tj = 125°C, Inductive load  
VCC = 850V, IC = 2400A  
VGE = ±15V  
Tj = 125°C, Inductive load  
Eon  
Eon  
Eoff  
Eoff  
Erec  
Erec  
0
0
800  
1600 2400 3200 4000 4800  
0
0.5  
1
1.5  
( )  
GATE RESISTANCE Ω  
2
2.5  
3
( )  
COLLECTOR CURRENT A  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  
MITSUBISHI HVIGBT MODULES  
CM2400HC-34H  
HIGH POWER SWITCHING USE  
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
HALF-BRIDGE  
FREE-WHEEL DIODE  
SWITCHING TIME CHARACTERISTICS  
REVERSE RECOVERY CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
101  
7
102  
7
104  
7
V
CC = 850V, VGE = ±15V  
VCC = 850V, VGE = ±15V  
RG(on) = RG(off) = 0.27Ω  
RG(on) = RG(off) = 0.27Ω  
5
5
5
Tj  
= 125°C, Inductive load  
Tj = 125°C, Inductive load  
3
2
3
2
3
2
td(off)  
100  
7
101  
7
103  
7
Irr  
5
5
5
td(on)  
3
2
3
2
3
2
tf  
10-1  
7
100  
7
102  
7
5
5
5
tr  
3
2
3
2
3
2
trr  
101  
10-2  
10-1  
101  
2
3
5 7102  
2
3
5 7103  
2
3
5 7104  
101  
2
3
5 7102  
2
3
5 7103  
2
3
5 7104  
( )  
( )  
EMITTER CURRENT A  
COLLECTOR CURRENT A  
TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
REVERSE BIAS SAFE OPERATING AREA  
(
)
RBSOA  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
6000  
5000  
4000  
3000  
2000  
1000  
0
V
CC ≤ 1150V, VGE = +/-15V  
Single Pulse, T  
R
R
C
= 25°C  
th(j–c)Q = 7K/kW  
th(j–c)R = 12K/kW  
Tj = 125°C, RG(off) ≥ 0.27Ω  
10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101  
0
500  
1000  
1500  
2000  
( )  
TIME s  
( )  
COLLECTOR-EMITTER VOLTAGE V  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  

相关型号：

CM2400HC-34H_09

 HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI

CM2400HC-34N

 HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI

CM2400HC-34N

 HIGH POWER SWITCHING USE INSULATED TYPE
POWEREX

CM2400HC-34N_09

 HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI

CM2400HC-34N_11

 HIGH POWER SWITCHING USE INSULATED TYPE
POWEREX

CM2400HCB-34N

 HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI

CM241/1P-128

 Line Transceiver, 1 Func, 4 Driver, 5 Rcvr, CMOS, PDIP28, PLASTIC, DIP-28
CALMIRCO

CM241/1P-20

 Line Transceiver, 1 Func, 4 Driver, 5 Rcvr, CMOS, PDIP28, PLASTIC, DIP-28
CALMIRCO

CM241/1P-64

 Line Transceiver, 1 Func, 4 Driver, 5 Rcvr, CMOS, PDIP28, PLASTIC, DIP-28
CALMIRCO

CM241/1S-128

 Line Transceiver, 1 Func, 4 Driver, 5 Rcvr, CMOS, PDSO28, 0.300 INCH, SOIC-28
CALMIRCO

CM241/1S-20

 Line Transceiver, 1 Func, 4 Driver, 5 Rcvr, CMOS, PDSO28, 0.300 INCH, SOIC-28
CALMIRCO

CM241/1S-64

 Line Transceiver, 1 Func, 4 Driver, 5 Rcvr, CMOS, PDSO28, 0.300 INCH, SOIC-28
CALMIRCO
©2020 ICPDF网 联系我们和版权申明