CM200E3Y-12E [MITSUBISHI]

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel;
CM200E3Y-12E
元器件型号: CM200E3Y-12E
生产厂家: MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用:

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel

电动机控制 栅 晶体管
PDF文件: 总1页 (文件大小:156K)
下载文档:  下载PDF数据表文档文件
型号参数:CM200E3Y-12E参数

CM200E3Y24E

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
32 ETC

CM200EXS-24S

Chopper IGBT NX-Series Module 200 Amperes/1200 Volts

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
15 POWEREX

CM200EXS-34SA

Chopper IGBT NX-Series Module 200 Amperes/1700 Volts

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
17 POWEREX

CM200G

Parallel - Fundamental Quartz Crystal, 0.032768MHz Nom, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-4

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 CONNOR-WINFIE

CM200G-032.768K

Parallel - Fundamental Quartz Crystal, 0.032768MHz Nom, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-4

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 CONNOR-WINFIE

CM200G-32.768KHZ

Parallel - Fundamental Quartz Crystal, 0.032768MHz Nom, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-4

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 CONNOR-WINFIE

CM200HA24E

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
40 ETC

CM200HA24H

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
35 ETC

CM200HA-24H

Single IGBTMOD 200 Amperes/1200 Volts

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
36 POWEREX

CM200HA-24H

HIGH POWER SWITCHING USE INSULATED TYPE

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
104 MITSUBISHI

CM200HA28

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.4KV V(BR)CES | 200A I(C)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
19 ETC

CM200HA-28

Insulated Gate Bipolar Transistor, 200A I(C), 1400V V(BR)CES, N-Channel

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 MITSUBISHI

CM200HG-130H

Single IGBTMOD HVIGBT Module 200 Amperes/6500 Volts

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
25 POWEREX

CM200HG-130H

HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
70 MITSUBISHI

CM200RL-12NF

IGBT MODULES HIGH POWER SWITCHING USE

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
22 MITSUBISHI