CM1800HC-34H [MITSUBISHI]
HIGH POWER SWITCHING USE; 高功率开关使用
| 型号： | CM1800HC-34H |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1800HC-34H
● IC................................................................ 1800A
● VCES ....................................................... 1700V
● Insulated Type
● 1-element in a pack
● AISiC base plate
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
190
171
C
C
C
6 - M8 NUTS
57±0.25
57±0.25
57±0.25
C
G
E
C
C
C
E
E
E
CM
E
E
E
CIRCUIT DIAGRAM
C
E
G
20.25
41.25
8 - φ7MOUNTING HOLES
3 - M4 NUTS
79.4
15
61.5
61.5
40
13
5.2
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Symbol
Item
Conditions
Ratings
1700
Unit
V
VCES
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
VCE = 0V
DC, TC = 85°C
Pulse
VGES
±20
V
1800
IC
A
Collector current
Emitter current
ICM
(Note 1)
(Note 1)
3600
A
1800
IE (Note 2)
IEM(Note 2)
A
Pulse
3600
A
15600
PC (Note 3) Maximum collector dissipation TC = 25°C, IGBT part
W
–40 ~ +150
–40 ~ +125
4000
Tj
Junction temperature
Storage temperature
Isolation voltage
—
—
°C
°C
V
Tstg
Viso
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
N·m
N·m
N·m
kg
—
—
Mounting torque
Mass
Mounting screw M6
Auxiliary terminals screw M4
Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Limits
Typ
—
Symbol
Item
Conditions
VCE = VCES, VGE = 0V
Unit
mA
Min
—
Max
32
Collector cutoff current
Gate-emitter
ICES
VGE(th)
IGES
IC = 180mA, VCE = 10V
4.5
5.5
6.5
0.5
V
threshold voltage
Gate-leakage current
Collector-emitter
VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.40
2.95
168
21.0
8.4
15.4
—
µA
Tj = 25°C
—
VCE(sat)
IC = 1800A, VGE = 15V
(Note 4)
V
saturation voltage
—
—
Tj = 125°C
Cies
Input capacitance
nF
nF
VCE = 10V
VGE = 0V
Coes
Output capacitance
Reverse transfer capacitance
Total gate charge
—
Cres
—
nF
QG
—
VCC = 850V, IC = 1800A, VGE = 15V
VCC = 850V, IC = 1800A
VGE1 = VGE2 = 15V
µC
µs
td (on)
tr
Turn-on delay time
Turn-on rise time
1.60
2.00
2.70
0.80
—
—
µs
td (off)
tf
—
Turn-off delay time
Turn-off fall time
RG = 0.3Ω
µs
—
Resistive load switching operation
IE = 1800A, VGE = 0V
µs
VEC(Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
2.50
—
V
2.70
—
IE = 1800A,
µs
700
—
die / dt = –5100A / µs
µC
K/W
K/W
K/W
0.008
0.013
—
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
Thermal resistance
—
Contact thermal resistance
0.006
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
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