概述
数据手册CM150TL-24NF_09 概述
IGBT MODULES HIGH POWER SWITCHING USE IGBT模块大功率开关使用
CM150TL-24NF_09 数据手册
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PDF下载MITSUBISHI IGBT MODULES
CM150TL-24NF
HIGH POWER SWITCHING USE
CM150TL-24NF
¡IC ...................................................................150A
¡VCES ......................................................... 1200V
¡Insulated Type
¡6-elements in a pack
APPLICATION
AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
135
(6.05)
11.7
(6.05)
110 0.5
17.5
10.5
26
26
10.5
10.5
V
W U
A
1
8
CN
B
1
1
1
WP
VP
UP
4-φ5.5
MOUNTING HOLES
(13)
11
30.5
25
25
46.3
6-M5 NUTS
Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B
LABEL
P
UP-1
UP-2
VP-1
VP-2
WP-1
WP-2
NC
NC
W
B
U
V
CN-7
CN-8
CN-5
CN-6
CN-3
CN-4
CN-1
CN-2
NC
N
CIRCUIT DIAGRAM
Feb. 2009
MITSUBISHI IGBT MODULES
CM150TL-24NF
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Conditions
Ratings
1200
Unit
V
V
VCES
VGES
IC
G-E Short
C-E Short
DC, TC = 76°C*1
Pulse
20
150
A
A
Collector current
Emitter current
300
150
ICM
(Note 2)
(Note 2)
A
A
IE
(
Note 1
)
)
)
300
890
IEM (Note 1
PC (Note 3
Tj
Pulse
W
Maximum collector dissipation TC = 25°C
Junction temperature
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
750
°C
°C
Vrms
N • m
Tstg
Storage temperature
Viso
Isolation voltage
Torque strength
Weight
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
—
N • m
g
—
—
Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Limits
Typ.
—
Symbol
Parameter
Test conditions
VCE = VCES, VGE = 0V
Unit
mA
Min.
—
Max.
1
Collector cutoff current
ICES
VGE(th)
IGES
Gate-emitter threshold voltage IC = 15mA, VCE = 10V
6
7
8
V
Gate leakage current
VGE = VGES, VCE = 0V
IC = 150A, VGE = 15V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
—
2.1
2.4
—
0.5
3.0
—
µA
Tj = 25°C
Tj = 125°C
Collector-emitter saturation voltage
V
VCE(sat)
Input capacitance
Cies
Coes
Cres
QG
23
nF
nF
nF
nC
ns
ns
ns
ns
ns
VCE = 10V
VGE = 0V
Output capacitance
Reverse transfer capacitance
Total gate charge
—
2
0.45
—
—
675
—
VCC = 600V, IC = 150A, VGE = 15V
Turn-on delay time
td(on)
tr
130
70
Turn-on rise time
VCC = 600V, IC = 150A
VGE = 15V
—
—
Turn-off delay time
td(off)
tf
400
350
150
—
Turn-off fall time
—
RG = 2.1Ω, Inductive load
IE = 150A
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
trr
(Note 1)
—
Qrr (Note 1
)
5.8
—
µC
V
VEC(Note 1
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
)
3.8
0.14
0.23
—
IE = 150A, VGE = 0V
IGBT part (1/6 module)*1
FWDi part (1/6 module)*1
—
—
K/W
K/W
K/W
Ω
Thermal resistance
Case to heat sink, Thermal compound Applied (1/6 module)*2
Contact thermal resistance
External gate resistance
0.051
—
31
1 : Case temperature (Tc) measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*
*
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM150TL-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
(TYPICAL)
300
250
200
150
100
50
4
3
2
1
0
VGE =
20V
VGE = 15V
Tj = 25°C
15
13
12
11
10
9
Tj = 25°C
Tj = 125°C
0
0
2
4
6
8
10
0
50
100 150 200 250 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
103
7
Tj = 25°C
5
8
6
4
2
0
3
2
102
7
5
IC = 300A
IC = 150A
3
2
Tj = 25°C
Tj = 125°C
IC = 60A
101
6
8
10 12 14 16 18 20
0
1
2
3
4
5
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
102
7
5
103
td(off)
7
5
tf
3
2
3
2
Cies
101
7
5
102
7
5
td(on)
3
2
3
2
Conditions:
VCC = 600V
VGE = 15V
RG = 2.1Ω
Tj = 125°C
Inductive load
100
7
5
Coes
101
7
5
tr
3
2
3
2
Cres
VGE = 0V
10–1
100
10–1
2
3
5 7100
2
3
5 7101 2 3 5 7102
101
2
3
5
7
102
2
3
5
7
103
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I
C
(A)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM150TL-24NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10–32 3 5710–22 3 5710–12 3 57100 2 3 57101
103
100
Single Pulse,
= 25°C
Under the chip
7
5
7
5
TC
3
2
3
2
10–1
10–1
7
5
7
5
I
rr
rr
102
7
3
2
3
2
t
Conditions:
IGBT part:
Per unit base =
th(j–c) = 0.14K/W
FWDi part:
5
10–2
10–2
V
V
CC = 600V
15V
= 2.1Ω
= 25°C
Inductive load
7
5
7
5
R
GE
=
3
2
R
T
G
3
2
3
2
Per unit base =
j
Rth(j–c) = 0.23K/W
10–3
10–3
101
101
2
3
5
7
102
2
3
5
7
103
10–52 3 5710–42 3 5710–3
TIME (s)
EMITTER CURRENT I
E
(A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
102
7
102
7
Conditions:
Esw(on)
V
V
R
CC = 600V
15V
= 2.1Ω
5
5
GE
=
G
3
2
3
2
Tj = 125°C
Inductive load
Esw(off)
Esw(off)
Esw(on)
C snubber at bus
101
7
101
7
Conditions:
CC = 600V
15V
V
5
5
VGE
=
I
T
C
= 150A
= 125°C
3
2
3
2
j
Inductive load
C snubber at bus
100
100
101
2
3
5
7
102
2
3
5
7
103
100
2
3
5
7
101
2
3
5
7
102
COLLECTOR CURRENT I
C
(A)
GATE RESISTANCE R
G
(Ω)
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
RECOVERY LOSS vs. I
E
(TYPICAL)
102
7
102
7
Conditions:
V
CC = 600V
15V
5
5
VGE
=
I
T
E
= 150A
= 125°C
3
2
3
2
j
Inductive load
Err
C snubber at bus
Err
101
7
101
7
Conditions:
V
V
R
CC = 600V
15V
= 2.1Ω
= 125°C
Inductive load
C snubber at bus
5
5
GE
=
G
3
2
3
2
Tj
100
100
100
2
3
5
7
101
2
3
5
7
102
101
2
3
5
7
102 103
2
3
5 7
GATE RESISTANCE R
G
(Ω)
EMITTER CURRENT IE (A)
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM150TL-24NF
HIGH POWER SWITCHING USE
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
16
12
8
IC = 150A
V
CC = 400V
V
CC = 600V
4
0
0
200
400
600
800
1000
GATE CHARGE QG (nC)
Feb. 2009
5
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