首页 |元器件品牌

CM1200DB-34N [MITSUBISHI]

HIGH POWER SWITCHING USE INSULATED TYPE; 大功率开关使用绝缘型
CM1200DB-34N
型号： CM1200DB-34N
厂家： Mitsubishi Group    Mitsubishi Group
描述：

HIGH POWER SWITCHING USE INSULATED TYPE
大功率开关使用绝缘型

开关 高功率电源
文件： 总6页 (文件大小：62K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
MITSUBISHI HVIGBT MODULES  
CM1200DB-34N  
HIGH POWER SWITCHING USE  
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CM1200DB-34N  
● IC................................................................ 1200A  
● VCES ....................................................... 1700V  
● Insulated Type  
● 2-element in a Pack  
● Cu Baseplate  
● Trench Gate IGBT : CSTBT™  
● Soft Reverse Recovery Diode  
APPLICATION  
Motor control, High Reliability Converters / Inverters, DC choppers  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
130±0.5  
57±0.25  
57±0.25  
4 - M8 NUTS  
4(E1)  
2(C2)  
E1  
G1  
C2  
4
3
2
1
G2  
E2  
C1  
3(C1)  
1(E2)  
CIRCUIT DIAGRAM  
E1  
E2  
C1  
C2  
G1  
G2  
6 - φ 7 MOUNTING HOLES  
16±0.2 18±0.2  
40±0.2 44±0.2  
57±0.2  
6 - M4 NUTS  
53±0.2  
5
±0.2  
55.2±0.3  
screwing depth  
min. 16.5  
35±0.2  
11.5±0.2  
14±0.2  
11.85±0.2  
screwing depth  
min. 7.7  
LABEL  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  
MITSUBISHI HVIGBT MODULES  
CM1200DB-34N  
HIGH POWER SWITCHING USE  
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
MAXIMUM RATINGS  
Symbol  
VCES  
Item  
Conditions  
Ratings  
1700  
Unit  
V
Collector-emitter voltage  
Gate-emitter voltage  
VGE = 0V, Tj = 25°C  
VCE = 0V, Tj = 25°C  
TC = 80°C  
±20  
VGES  
V
1200  
IC  
A
Collector current  
Emitter current  
2400  
ICM  
Pulse  
(Note 1)  
(Note 1)  
A
1200  
IE (Note 2)  
IEM (Note 2)  
A
2400  
Pulse  
A
6900  
PC (Note 3) Maximum power dissipation  
TC = 25°C, IGBT part  
W
°C  
°C  
°C  
V
–40 ~ +150  
–40 ~ +125  
–40 ~ +125  
4000  
Tj  
Junction temperature  
Operating temperature  
Storage temperature  
Isolation voltage  
Top  
Tstg  
Viso  
RMS, sinusoidal, f = 60Hz, t = 1min.  
VCC = 1200V, VCES ≤ 1700V, VGE = 15V  
Tj = 125°C  
Maximum short circuit pulse  
width  
10  
tpsc  
µs  
ELECTRICAL CHARACTERISTICS  
Limits  
Typ  
—
Symbol  
Item  
Conditions  
Unit  
mA  
Min  
—
Max  
4
Collector cut-off current  
Gate-emitter  
VCE = VCES, VGE = 0V, Tj = 25°C  
ICES  
VGE(th)  
IGES  
IC = 120mA, VCE = 10V, Tj = 25°C  
6.0  
7.0  
8.0  
V
threshold voltage  
Gate leakage current  
Collector-emitter  
—
0.5  
2.80  
—
VGE = VGES, VCE = 0V, Tj = 25°C  
IC = 1200A, VGE = 15V, Tj = 25°C  
IC = 1200A, VGE = 15V, Tj = 125°C  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
µA  
(Note 4)  
(Note 4)  
2.15  
2.40  
176  
9.6  
VCE(sat)  
V
saturation voltage  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Total gate charge  
Cies  
Coes  
Cres  
Qg  
—
nF  
nF  
nF  
µC  
VCE = 10V, f = 100kHz  
—
VGE = 0V, Tj = 25°C  
2.8  
—
6.8  
—
VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C  
IE = 1200A, VGE = 0V, Tj = 25°C  
IE = 1200A, VGE = 0V, Tj = 125°C  
VCC = 850V, IC = 1200A, VGE = ±15V  
RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH  
Inductive load  
2.60  
2.30  
1.00  
0.40  
380  
1.20  
0.30  
360  
1.00  
560  
300  
220  
3.30  
—
(Note 4)  
(Note 4)  
VEC(Note 2) Emitter-collector voltage  
V
td(on)  
—
Turn-on delay time  
µs  
µs  
tr  
Turn-on rise time  
—
Eon  
Turn-on switching energy  
Turn-off delay time  
—
mJ/pulse  
µs  
td(off)  
—
VCC = 850V, IC = 1200A, VGE = ±15V  
RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH  
Inductive load  
tf  
Turn-off fall time  
—
µs  
Eoff  
Turn-off switching energy  
Reverse recovery time  
Reverse recovery current  
Reverse recovery charge  
Reverse recovery energy  
—
mJ/pulse  
µs  
trr (Note 2)  
Irr (Note 2)  
Qrr (Note 2)  
Erec(Note 2)  
—
VCC = 850V, IC = 1200A, VGE = ±15V  
RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH  
Inductive load  
—
A
—
µC  
—
mJ/pulse  
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).  
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).  
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).  
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  
MITSUBISHI HVIGBT MODULES  
CM1200DB-34N  
HIGH POWER SWITCHING USE  
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
THERMAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Item  
Conditions  
Min  
—
Typ  
—
Max  
18.0  
40.0  
—
Rth(j-c)Q  
Rth(j-c)R  
Rth(c-f)  
Junction to Case, IGBT part, 1/2 module  
Junction to Case, FWDi part, 1/2 module  
Case to Fin, λgrease = 1W/m·K, 1/2 module  
K/kW  
K/kW  
K/kW  
Thermal resistance  
—
—
—
Contact thermal resistance  
16.0  
MECHANICAL CHARACTERISTICS  
Limits  
Symbol  
Item  
Conditions  
Unit  
Min  
7.0  
3.0  
1.0  
—
Typ  
—
Max  
20.0  
6.0  
3.0  
—
M8 : Main terminals screw  
M6 : Mounting screw  
—
M
Mounting torque  
N·m  
—
M4 : Auxiliary terminals screw  
—
Mass  
1.3  
—
kg  
—
—
CTI  
Comparative tracking index  
Clearance distance in air  
Creepage distance along surface  
Internal inductance  
600  
9.5  
15.0  
—
—
—
d
d
L
a
mm  
mm  
nH  
—
—
s
—
C-E(int)  
C-E(int)  
IGBT part  
30  
—
—
R
Internal lead resistance  
TC = 25°C  
0.28  
mΩ  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  
MITSUBISHI HVIGBT MODULES  
CM1200DB-34N  
HIGH POWER SWITCHING USE  
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
PERFORMANCE CURVES  
OUTPUT CHARACTERISTICS  
TRANSFER CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
2400  
2000  
1600  
1200  
800  
400  
0
2400  
2000  
1600  
1200  
800  
400  
0
Tj  
= 125°C  
VCE = 20V  
V
GE = 15V  
GE = 12V  
V
VGE = 20V  
VGE = 10V  
VGE = 8V  
T
T
j
j
= 25°C  
= 125°C  
0
1
2
3
4
5
6
0
2
4
6
8
10  
12  
( )  
( )  
COLLECTOR-EMITTER VOLTAGE V  
GATE-EMITTER VOLTAGE V  
COLLECTOR-EMITTER SATURATION  
VOLTAGE CHARACTERISTICS  
FREE-WHEEL DIODE  
FORWARD CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
5
4
3
2
1
0
5
4
3
2
1
0
V
GE = 15V  
T
T
j
j
= 25°C  
= 125°C  
T
T
j
j
= 25°C  
= 125°C  
0
400  
800  
1200 1600 2000 2400  
0
400  
800  
1200 1600 2000 2400  
( )  
COLLECTOR CURRENT A  
( )  
EMITTER CURRENT A  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  
MITSUBISHI HVIGBT MODULES  
CM1200DB-34N  
HIGH POWER SWITCHING USE  
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
CAPACITANCE CHARACTERISTICS  
GATE CHARGE CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
103  
7
20  
16  
12  
8
VCC = 850V, IC = 1200A  
Tj = 25°C  
5
3
2
Cies  
102  
7
5
3
2
101  
7
Coes  
5
4
3
2
Cres  
3
VGE = 0V, Tj = 25°C  
f = 100kHz  
100  
0
10-1  
10  
10  
0
2
4
6
8
10  
0
1
2
2
3
5 7  
2
3
5 7  
2
5 7  
10  
( )  
(
)
COLLECTOR-EMITTER VOLTAGE V  
GATE CHARGE µC  
HALF-BRIDGE  
HALF-BRIDGE  
SWITCHING ENERGY CHARACTERISTICS  
SWITCHING ENERGY CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
1200  
1000  
800  
600  
400  
200  
0
2000  
1600  
1200  
800  
400  
0
VCC = 850V, VGE = ±15V  
RG(on) = 1.3Ω, RG(off) = 3.3Ω  
Tj = 125°C, Inductive load  
VCC = 850V, IC = 1200A  
VGE = ±15V  
Tj = 125°C, Inductive load  
Eon  
Eon  
Eoff  
Eoff  
Erec  
Erec  
0
400  
800  
1200 1600 2000 2400  
0
2
4
6
8
10  
12  
( )  
COLLECTOR CURRENT A  
( )  
GATE RESISTANCE Ω  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  
MITSUBISHI HVIGBT MODULES  
CM1200DB-34N  
HIGH POWER SWITCHING USE  
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
INSULATED TYPE  
HALF-BRIDGE  
FREE-WHEEL DIODE  
SWITCHING TIME CHARACTERISTICS  
REVERSE RECOVERY CHARACTERISTICS  
(
)
(
)
TYPICAL  
TYPICAL  
101  
7
500  
400  
300  
200  
100  
0
V
R
CC = 850V, VGE = ±15V  
G(on) = 1.3Ω  
= 125°C, Inductive load  
V
R
CC = 850V, VGE = ±15V  
G(on) = 1.3Ω, RG(off) = 3.3Ω  
= 125°C, Inductive load  
5
T
j
Tj  
3
2
t
d(off)  
d(on)  
Qrr  
100  
7
t
t
r
f
5
t
3
2
10-1  
7
5
3
2
10-2  
102  
2
3
5
7
103  
2
3
5
7
104  
0
400  
800  
1200 1600 2000 2400  
( )  
( )  
EMITTER CURRENT A  
COLLECTOR CURRENT A  
TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
REVERSE BIAS SAFE OPERATING AREA  
(
)
RBSOA  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
3000  
2500  
2000  
1500  
1000  
500  
V
CC ≤ 1200V, VGE = +/-15V  
Single Pulse, T  
R
R
C
= 25°C  
th(j–c)Q = 18K/kW  
th(j–c)R = 40K/kW  
Tj = 125°C, RG(off) ≥ 3.3Ω  
Module  
Chip  
0
10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101  
0
500  
1000  
1500  
2000  
( )  
TIME s  
( )  
COLLECTOR-EMITTER VOLTAGE V  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
Jul. 2005  

相关型号：

SI9130DB

 5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

 Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明