BCR25A-8 [MITSUBISHI]
Trigger Output SSR;
| 型号： | BCR25A-8 |
| 厂家： | 
Mitsubishi Group |
| 描述： | Trigger Output SSR 输出元件 光电 |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Dimensions
BCR25A, BCR25B
OUTLINE DRAWING
in mm
(19.6)
8.0
φ3.3 MIN
φ1.3 MIN
1
3
3
(φ14)
1
2
3
M6×1.0
T
T
1
TERMINAL
TERMINAL
1
2
3
2
BCR25A
2
GATE TERMINAL
39 MAX
30±0.2
• IT (RMS) ...................................................................... 25A
• VDRM ..............................................................400V/500V
• IFGT !, IRGT # ........................................................50mA
• IRGT !.....................................................................75mA
2-φ4.2 MIN
8.0
φ3.3 MIN
φ1.3 MIN
1
3
APPLICATION
Contactless AC switches, light dimmer,
on/off control of copier lamps
3
φ14.2 MAX
2
BCR25B
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
8
10
✽1
VDRM
VDSM
Repetitive peak off-state voltage
400
600
500
600
V
V
✽1
Non-repetitive peak off-state voltage
Symbol
Parameter
RMS on-state current
Surge on-state current
Conditions
Ratings
Unit
A
IT (RMS)
ITSM
Commercial frequency, sine full wave, 360° conduction, Tc=92°C
25
60Hz sinewave 1 full cycle, peak value, non-repetitive
250
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
262
A s
PGM
PG (AV)
VGM
IGM
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
5.0
W
W
0.5
10
2.0
V
Peak gate current
A
TI
Junction temperature
Storage temperature
–20 ~ +125
–20 ~ +125
30
°C
Tstg
°C
kg·cm
N·m
—
Mounting torque
Weight
BCR25A only
2.94
BCR25A (Typical value)
BCR25B (Typical value)
18
—
g
23
✽1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
5.0
1.6
3.0
3.0
3.0
50
mA
V
IDRM
Repetitive peak off-state current
On-state voltage
Tj=125°C, VDRM applied
VTM
Tc=25°C, ITM=40A, Instantaneous measurement
—
!
@
#
!
@
#
—
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
V
✽2
—
V
Gate trigger voltage
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
—
V
—
mA
mA
mA
V
✽2
—
75
Gate trigger current
—
50
0.2
—
—
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VD=1/2VDRM
1.0
°C/W
Rth (j-c)
Junction to case
Critical-rate of rise of off-state
commutating voltage
✽3
—
—
V/µs
(dv/dt)c
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
(dv/dt) c
Voltage
class
VDRM
(V)
Commutating voltage and current waveforms
(inductive load)
Test conditions
Symbol
Min.
—
Unit
R
SUPPLY
1. Junction temperature
VOLTAGE
TIME
8
400
500
Tj=125°C
L
R
L
20
—
20
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–13.5A/ms
(di/dt)c
MAIN CURRENT
V/µs
TIME
TIME
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
10
(dv/dt)c
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
103
RATED SURGE ON-STATE CURRENT
320
280
240
200
160
120
80
7
TC = 25°C
5
3
2
102
7
5
3
2
101
7
5
3
2
40
100
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
·
GATE TRIGGER CURRENT VOLTAGE VS.
GATE CHARACTERISTICS
JUNCTION TEMPERATURE
200
3
2
TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ
VGM = 10V
PG(AV) = 0.5W
PGM = 5.0W
180
160
140
120
100
80
101
7
5
3
2
GATE TRIGGER CURRENT
GATE TRIGGER VOLTAGE
VGT = 3.0V
IGM = 2A
100
7
5
60
3
2
40
IFGT I IRGT I
IRGT III
VGD = 0.2V
10–1
7
20
5
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–40–20 0 20 40 60 80 100120140160
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
MAXIMUM ON-STATE POWER
DISSIPATION
102 2 3 5 7 103
1.0
50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
45
40
35
30
25
20
15
10
5
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
0
5
10 15 20 25 30 35 40
CONDUCTION TIME
(CYCLES AT 60Hz)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR25A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
140
120
100
80
160
NATURAL CONVECTION
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
120
100
80
100 100 t3.0
120 120 t3.0
BX 20-06
60
60
360°
40
40
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
WITHOUT
MICA PLATE
WITH GREASE
20
20
0
0
0
4
8
12 16 20 24 28 32
0
4
8
12 16 20 24 28 32
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR25B)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
160
NATURAL CONVECTION
TYPICAL EXAMPLE
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
120
100
80
140
III QUADRANT
120
100 100 t3.0
120 120 t3.0
160 160 t4.0
100
I QUADRANT
80
60
60
40
20
0
40
WITHOUT
MICA PLATE
WITH GREASE
20
0
0
4
8
12 16 20 24 28 32
0
20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
COMMUTATION CHARACTERISTICS
6Ω
VOLTAGE WAVEFORM
TYPICAL
EXAMPLE
TYPICAL
EXAMPLE
3
2
3
2
A
t
V
D
(dv/dt)
C
T
j
= 125°C
= 4A, τ = 500µs
Tj = 25°C
102
7
103
7
6V
I
T
= 200V, f = 3HzCURRENT WAVEFORM
5
5
V
D
(di/dt)
t
C
t
w
I
T
I
RGT III
3
2
3
2
0.1s
τ
I
RGT I
I
FGT I
101
7
5
102
7
5
3
2
3
2
III QUADRANT
100
7
5
101
7
5
I QUADRANT
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
A
A
6V
6V
R
G
RG
V
V
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
A
6V
RG
V
TEST PROCEDURE 3
Feb.1999
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