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2SC2131 [MITSUBISHI]

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band Mobile radio applications); NPN外延平面型（用于RF功率放大器在UHF频段移动无线电应用）
2SC2131
元器件型号： 2SC2131
生产厂家： MITSUBISHI ELECTRIC SEMICONDUCTOR    MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band Mobile radio applications)
NPN外延平面型（用于RF功率放大器在UHF频段移动无线电应用）

晶体 放大器 小信号双极晶体管 射频小信号双极晶体管 功率放大器 无线 局域网
PDF文件： 总3页 (文件大小：142K)
下载文档：  下载PDF数据表文档文件
型号参数：2SC2131参数
 查看货源

2SC2133

 NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band 24 to 28 volts operation applications)

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76 MITSUBISHI

2SC2134

 NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)

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54 MITSUBISHI

2SC2137

 TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-3

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11 ETC

2SC2137

 Silicon NPN Power Transistors

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4 SAVANTIC

2SC2137

 isc Silicon NPN Power Transistor

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15 ISC

2SC2137

 isc Silicon NPN Power Transistor

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8 ISC

2SC2139

 isc Silicon NPN Power Transistor

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19 ISC

2SC2139

 Silicon NPN Power Transistors

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15 SAVANTIC

2SC2139

 TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-3

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64 ETC

2SC2139A

 Silicon NPN Power Transistors

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5 SAVANTIC

2SC2140

 Silicon NPN Power Transistors

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14 SAVANTIC

2SC2140

 isc Silicon NPN Power Transistor

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20 ISC

2SC2148

 SILICON TRANSISTR

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16 NJSEMI

2SC2148

 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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145 NEC

2SC2149

 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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26 NEC
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